FDPF20N50

FDP20N50 / FDPF20N50 500V N-Channel MOSFET February 2007 FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features • 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP20N50 500 20 12.9 80 ±30 FDPF20N50 20 * 12.9 * 80 * Unit V A A A V mJ A mJ V/ns 1110 20 25 4.5 250 2.0 -55 to +150 300 62 0.5 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP20N50 0.5 0.5 62.5 FDPF20N50 2.0 -62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP20N50 / FDPF20N50 Rev. B FDP20N50 / FDPF20N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP20N50 FDPF20N50 Device FDP20N50 FDPF20N50 Package TO-220 TO-220F Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VDS = 40V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 500 ------ Typ. -0.5 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.20 24.6 5.0 0.23 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---2400 355 27 3120 465 -pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400V, ID = 20A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 250V, ID = 20A RG = 25Ω -------- 95 375 100 105 45.6 14.8 21.6 200 760 210 220 59.5 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.0mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 20A VGS = 0V, IS = 20A dIF/dt =100A/µs (Note 4) ------ ---507 7.20 20 80 1.4 --- A A V ns µC 2 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] 10 1 150 C 1 o 10 25 C o -55 C o 10 0 * Notes : 1. 250µs Pulse Test 2. TC = 25 C o * Notes : 1. VDS = 40V 2. 250µs Pulse Test 0 10 -1 10 0 10 1 10 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.8 RDS(ON) [Ω], Drain-Source On-Resistance 0.6 VGS = 10V 0.4 IDR, Reverse Drain Current [A] 10 1 150 C o 25 C o VGS = 20V 0.2 *Notes : 1. VGS = 0V 2. 250µs Pulse Test 0 * Note : TJ = 25 C o 0.0 0 15 30 45 60 75 90 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V 10 VGS, Gate-Source Voltage [V] 5000 Crss = Cgd VDS = 250V VDS = 400V Coss Capacitances [pF] 4000 8 Ciss 3000 6 2000 * Note : 1. VGS = 0 V 4 1000 Crss 2. f = 1 MHz 2 * Note : ID = 20A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 10 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area - FDP20N50 Figure 9-2. Maximum Safe Operating Area - FDPF20N50 10 2 10 2 10 µs 10 µs ID, Drain Current [A] ID, Drain Current [A] 100 µs 1 ms 10 1 10 1 100 µs 1 ms 10 ms 100 ms DC Operation in This Area is Limited by R DS(on) 10 ms 100 ms DC 10 0 Operation in This Area is Limited by R DS(on) 10 0 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 10 0 10 1 10 2 10 3 10 -2 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 25 20 ID, Drain Current [A] 15 10 5 0 25 50 75 100 o 125 150 TC, Case Temperature [ C] 4 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP20N50 10 0 (t), Thermal Response D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e * N o te s : 1 . Z θJC (t) = 0 .5 o 10 -1 PDM t1 t2 C /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θJC ( t) θJC 10 -2 Z 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve - FDPF20N50 10 0 D = 0 .5 0 .2 0 .1 ZθJC(t), Thermal Response 10 -1 0 .0 5 0 .0 2 0 .0 1 PDM t1 t2 * N o te s : 1 . Z θ J C ( t) = 2 .0 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) o 10 -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 5 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 8 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 9 FDP20N50 / FDPF20N50 Rev. B 15.87 ±0.20 www.fairchildsemi.com FDP20N50 / FDPF20N50 500V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 FDP20N50 / FDPF20N50 Rev. B www.fairchildsemi.com