FDPF8N50NZ

FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Uninterruptible Power Supply • Lighting • AC-DC Power Supply D GD S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Continuous (TC = 25oC) FDP8N50NZ FDPF8N50NZ 500 Unit V ±25 V 8 8* 4.8 4.8* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 8 A EAR Repetitive Avalanche Energy (Note 1) 13 mJ dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC 32* A 122 (Note 3) (TC = 25oC) PD TL 32 (Note 2) A mJ 10 V/ns 130 40.3 W 1 0.3 W/oC -55 to +150 oC 300 oC FDP8N50NZ FDPF8N50NZ Unit *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. 0.96 3.1 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 1 oC/W www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET October 2013 Device Marking FDP8N50NZ Device FDP8N50NZ Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units FDPF8N50NZ FDPF8N50NZ TO-220F Tube N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.5 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 500V, VGS = 0V - - 1 VDS = 400V, TC = 125oC - - 10 VGS = ±25V, VDS = 0V - - ±10 A A On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 4A - 0.77 0.85  gFS Forward Transconductance VDS = 20V, ID = 4A - 6.3 - S VDS = 25V, VGS = 0V f = 1MHz - 565 735 pF - 80 105 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400V,ID = 8A VGS = 10V (Note 4) - 5 8 pF - 14 18 nC - 4 - nC - 6 - nC - 17 45 ns - 34 80 ns - 43 95 ns - 27 60 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 8A RG = 25, VGS = 10V (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 8A - - 1.4 V trr Reverse Recovery Time 228 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 8A dIF/dt = 100A/s - 1.43 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.8mH, IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 8A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 2 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 30 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID, Drain Current[A] 10 ID, Drain Current[A] Figure 2. Transfer Characteristics 30 1 0.1 o 150 C o -55 C o 25 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.03 0.03 2. TC = 25 C 0.1 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 1.6 1.2 VGS = 10V VGS = 20V 0.8 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.4 *Note: TC = 25 C 0 3 6 9 12 ID, Drain Current [A] 15 1 0.4 18 Figure 5. Capacitance Characteristics Coss 900 *Note: 1. VGS = 0V 2. f = 1MHz 600 300 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 2.4 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 2. 250s Pulse Test 0.8 1.2 1.6 2.0 VSD, Body Diode Forward Voltage [V] 10 VGS, Gate-Source Voltage [V] 1200 Capacitances [pF] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.0 RDS(ON) [], Drain-Source On-Resistance 2 6 4 2 0 30 3 VDS = 100V VDS = 250V VDS = 400V 8 *Note: ID = 8A 0 3 6 9 12 Qg, Total Gate Charge [nC] 15 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Typical Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 4A 0.5 0.0 -100 150 Figure 9. Maximum Safe Operating Area - FDP8N50NZ -50 0 50 100 o TJ, Junction Temperature [ C] 10s 10s ID, Drain Current [A] 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 100s 10 100s 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] DC *Notes: o 1. TC = 25 C 0.01 150 Figure 10. Maximum Safe Operating Area - FDPF8N50NZ 50 50 ID, Drain Current [A] 2.5 0.01 1000 Figure 11. Maximum Drain Current vs. Case Temperature 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 12. Unclamped Inductive Switching Capability 10 10 8 IAS, AVALANCHE CURRENT(A) ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 TJ = 25oC TJ = 125oC 1 0.01 150 0.1 1 4 tAV, TIME IN AVALANCHE(ms) 4 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Typical Characteristics (Continued) FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Typical Characteristics (Continued) Figure 13. Transient Thermal Response Curve - FDP8N50NZ oC/W] ZThermal Response Response [Z[JC ] JC(t), Thermal 2 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 t2 *Notes: 0.02 0.01 o 1. ZJC(t) = 0.96 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 -4 -3 10 -2 10 10 Pulse Duration t Rectangular , Square Wave Pulse Duration[sec] [sec] -1 10 1 1 Figure 14. Transient Thermal Response Curve - FDPF8N50NZ ZThermal Response [oC/W] JC(t), Thermal Response [ZJC ] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 *Notes: 0.01 o Single pulse 0.01 -5 10 t2 1. ZJC(t) = 3.1 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 10 -2 -1 10 10 1 10 Pulse Duration tRectangular , Square Wave Pulse Duration[sec] [sec] 2 10 3 10 1 ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 5 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Figure 15. Gate Charge Test Circuit & Waveform IG = const. Figure 16. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 6 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 7 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions TO-220 3L Figure 19. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 Dimension in Millimeters ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 8 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions TO-220F 3L Figure 20. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 Dimension in Millimeters ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2010 Fairchild Semiconductor Corporation FDP8N50NZ / FDPF8N50NZ Rev. C2 10 www.fairchildsemi.com FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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