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FDP12N50NZ / FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 11.5 A, 520 m
Features
Description
• RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• Low Gate Charge (Typ. 23 nC )
• Low Crss (Typ. 14 pF )
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
GD
S
G
G
D
S
TO-220
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
- Continuous (TC = 25oC)
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
- Continuous (TC = 100oC)
- Pulsed
Unit
V
±25
V
11.5
11.5*
6.9
6.9*
46
A
46*
A
(Note 2)
560
Avalanche Current
(Note 1)
11.5
A
Repetitive Avalanche Energy
(Note 1)
17
mJ
20
V/ns
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
TL
(Note 1)
FDP12N50NZ FDPF12N50NZ
500
- Derate above 25oC
mJ
10
V/ns
170
42
W
1.37
0.33
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP12N50NZ FDPF12N50NZ
RJC
Thermal Resistance, Junction to Case, Max.
0.73
3.0
RJA
Thermal Resistance, Junction to Ambient, Max.
62.5
62.5
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
1
Unit
o
C/W
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
August 2016
Device Marking
FDP12N50NZ
Device
FDP12N50NZ
Package
TO-220
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
FDPF12N50NZ
FDPF12N50NZ
TO-220F
Tube
N/A
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
-
-
V
-
0.5
-
V/oC
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to
25oC
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, TC = 125oC
-
-
10
VGS = ±25V, VDS = 0V
-
-
±10
A
A
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
-
5.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 5.75A
-
0.46
0.52
gFS
Forward Transconductance
VDS = 20V, ID = 5.75A
-
12
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
945
1235
pF
-
155
205
pF
-
14
20
pF
-
23
30
nC
-
5.5
-
nC
-
9.6
-
nC
-
20
50
ns
-
50
110
ns
-
60
130
ns
-
45
100
ns
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
11.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
-
-
1.4
V
trr
Reverse Recovery Time
-
315
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 11.5A
dIF/dt = 100A/s
-
2.0
-
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 8.5mH, IAS = 11.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 11.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
2
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
30
50
ID, Drain Current[A]
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5V
6.0 V
5.5 V
10
ID, Drain Current[A]
Figure 2. Transfer Characteristics
1
10
o
150 C
o
25 C
1
o
-55 C
*Notes:
1. 250s Pulse Test
*Notes:
1. VDS = 20V
2. 250s Pulse Test
o
0.1
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
10
0.1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5
6
7
8
VGS, Gate-Source Voltage[V]
9
10
100
0.9
IS, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
4
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.0
0.8
0.7
VGS = 10V
0.6
0.5
VGS = 20V
0.4
o
150 C
10
*Notes:
1. VGS = 0V
*Note: TC = 25 C
0
6
12
18
ID, Drain Current [A]
24
1
0.4
30
2000
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
1000
500
1.4
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1500
2. 250s Pulse Test
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
VGS, Gate-Source Voltage [V]
2500
o
25 C
o
Figure 5. Capacitance Characteristics
Capacitances [pF]
3
Coss
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
Crss
0
0.1
1
10
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
0
30
3
*Note: ID = 11.5A
0
5
10
15
20
Qg, Total Gate Charge [nC]
25
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Typical Characteristics
Figure 8. On-Resistance Variation
vs. Temperature
1.20
2.8
1.15
2.4
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250uA
0.90
0.85
-100
-50
0
50
100
o
TJ, Junction Temperature [ C]
2.0
1.6
1.2
0.4
-75 -50
150
Figure 9. Maximum Safe Operating Area
- FDPF12N50NZ
*Notes:
1. VGS = 10V
2. ID = 5.75A
0.8
0
50
100
o
TJ, Junction Temperature [ C]
150
Figure 10.Maximum Safe Operating Area
- FDP12N50NZ
100
100
30s
10s
100s
100s
ID, Drain Current [A]
ID, Drain Current [A]
10
1ms
10ms
100 ms
DC
1
Operation in This Area
is Limited by RDS(on)
*Notes:
o
0.1
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
* Notes :
0.1
1. TC = 25 C
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
VDS, Drain-Source Voltage [V]
o
0.01
1000
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs. Case Temperature
12
ID, Drain Current [A]
10
8
6
4
2
0
25
50
75
100
125
o
TC, Case Temperature [ C]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
150
4
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Typical Characteristics (Continued)
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Typical Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDP12N50NZ
o
ZThermal
Response
Response
[Z[JCC/W]
]
JC(t), Thermal
5
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
PDM
t1
t2
* Notes :
Single pulse
o
1. ZJC(t) = 0.73 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
-5
10
-4
-3
10
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
1
10
t1, Square Wave Pulse Duration [sec]
Figure 13. Transient Thermal Response Curve - FDPF12N50NZ
ZZ
(t), Thermal Response [oC/W]
JC
JC(t), Thermal Response
5
D=0.5
1
0.2
PDM
0.1
t1
0.05
-1
10
0.02
0.01
o
1. ZJC(t) = 3.0 C/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZJC(t)
single pulse
-2
10
-5
10
t2
*Notes:
-4
10
-3
10
-2
10
-1
10
1
10
t1,t1Square
Wave
, Square
WavePulse
PulseDuration
Duration [sec]
[sec]
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
5
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Figure 14. Gate Charge Test Circuit & Waveform
IG = const.
Figure 15. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
VDD
VGS
VGS
DUT
V
10V
GS
90%
10%
td(on)
tr
t on
td(off)
tf
t off
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
6
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
7
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220 3L
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
8
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
Mechanical Dimensions
TO-220F 3L
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
9
www.fairchildsemi.com
AccuPower™
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
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Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®*
®
tm
Power Supply WebDesigner™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Xsens™
仙童 ®
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I77
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. 1.5
10
www.fairchildsemi.com
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
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