FDPF5N60NZ

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0 Ω Features Description • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD / LED / PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D GD S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP5N60NZ FDPF5N60NZ 600 Unit V ±25 - Continuous (TC = 25oC) V 4.5 4.5* 2.7 2.7* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) 175 IAR Avalanche Current (Note 1) 4.5 A EAR Repetitive Avalanche Energy (Note 1) 10 mJ 20 V/ns dv/dt - Continuous (TC = 100oC) - Pulsed (Note 1) 18* MOSFET dv/dt Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds TL 18 - Derate above 25oC A A mJ 10 V/ns 100 33 W 0.8 0.27 W/oC -55 to +150 oC 300 oC *Dran current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP5N60NZ FDPF5N60NZ RθJC Thermal Resistance, Junction to Case, Max. 1.25 3.75 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 1 Unit o C/W www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET November 2013 Part Number Top Mark FDP5N60NZ FDP5N60NZ Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF5N60NZ FDPF5N60NZ TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V o ID = 250 μA, Referenced to 25 C VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±25 V, VDS = 0 V - - ±10 μA μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 2.25 A - 1.65 2.0 Ω gFS Forward Transconductance VDS = 20 V, ID = 2.25 A - 5 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 450 600 pF - 50 65 pF - 5 7.5 pF - 10 13 nC - 2.5 - nC - 4 - nC - 15 40 ns - 20 50 ns - 35 80 ns - 20 50 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 480 V, ID = 4.5 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300 V, ID = 4.5 A, VGS = 10 V, RG = 25 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 18 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4.5 A - - 1.4 V trr Reverse Recovery Time - 230 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 4.5 A, dIF/dt = 100 A/μs - 0.9 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 17.3 mH, IAS = 4.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 2 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 20 10 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 10 ID, Drain Current[A] ID, Drain Current[A] Figure 2. Transfer Characteristics 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS, Gate-Source Voltage[V] 40 IS, Reverse Drain Current [A] 3 VGS = 10V 2 VGS = 20V 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 1 *Note: TC = 25 C 0 2 4 6 ID, Drain Current [A] 8 0.1 0.2 10 Figure 5. Capacitance Characteristics 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 1000 Ciss Capacitances [pF] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4 RDS(ON) [Ω], Drain-Source On-Resistance 2 100 Coss Crss 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 -1 10 *Note: 1. VGS = 0V 2. f = 1MHz 1 10 VDS, Drain-Source Voltage [V] ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 4.5A 0 30 3 0 2 4 6 8 Qg, Total Gate Charge [nC] 10 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics Figure 8. On-Resistance Variation vs. Temperature 1.12 2.8 1.08 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 0.88 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.4 -80 160 Figure 9. Maximum Safe Operating Area - FDP5N60NZ *Notes: 1. VGS = 10V 2. ID = 2.25A 0.8 -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Safe Operating Area - FDPF5N60NZ 50 30 30μs 10 100μs 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 30μs 100μs ID, Drain Current [A] ID, Drain Current [A] 10 1ms 1 Operation in This Area is Limited by R DS(on) 0.1 *Notes: *Notes: o o 1. TC = 25 C 1. TC = 25 C o 0.01 0.1 0.01 0.1 1000 Figure 11. Maximum Drain Current vs. Case Temperature 1 10 100 1000 3000 VDS, Drain-Source Voltage [V] 8 IAS, AVALANCHE CURRENT(A) 4 ID, Drain Current [A] 2. TJ = 150 C 3. Single Pulse Figure 12. Unclamped Inductive Switching Capability 5 3 2 1 0 25 DC o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 10ms 50 75 100 125 o TC, Case Temperature [ C] ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 TJ = 25oC TJ = 125oC 1 0.01 150 0.1 1 2 tAV, TIME IN AVALANCHE(ms) 4 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve - FDP5N60NZ 1 θ JC o ZThermal Response θJC(t), Thermal Response [Z [ ]C/W] 2 0.5 0.2 0.1 PDM 0.1 t1 0.05 t2 *Notes: 0.02 o 1. ZθJC(t) = 1.25 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 -4 10 -3 -2 10 10 Rectangular Duration t1, Rectangular PulsePulse Duration [sec] [sec] -1 10 1 10 θ JC o ZThermal Response θJC(t), Thermal Response [Z []C/W] Figure 14. Transient Thermal Response Curve - FDPF5N60NZ 0.5 1 0.2 PDM 0.1 t1 0.05 0.1 0.02 o 1. ZθJC(t) = 3.75 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 t2 *Notes: 0.01 -4 10 -3 -2 -1 10 10 10 1 Rectangular t1, RectangularPulse PulseDuration Duration [sec] [sec] 5 10 2 10 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET IG = const. Figure 15. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 16. Resistive Switching Test Circuit & Waveforms VGS Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 6 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 18. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 7 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 19. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 8 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 20. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003 ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. C2 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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