FDU6776A_F071

FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench® MOSFET 25 V, 7.5 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 17.7 A Max rDS(on) = 17.0mΩ at VGS = 4.5 V, ID = 13.2 A 100% UIL test RoHS Compliant Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 30 54 17.7 100 32 39 3.7 -55 to +175 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.8 40 °C/W Package Marking and Ordering Information Device Marking FDD6776A FDU6776A Device FDD6776A FDU6776A_F071 Package D-PAK (TO-252) TO-251AA Reel Size 13 ’’ N/A(Tube) Tape Width 12 mm N/A Quantity 2500 units 75 units ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C 1 www.fairchildsemi.com FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 20 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 25 16 1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = 17.7 A VGS = 10 V, ID = 17.7 A Short-Lead I-PAK version rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 13.2 A VGS = 4.5 V, ID = 13.2 A Short-Lead I-PAK version VGS = 10 V, ID = 17.7 A, TJ = 150 °C gFS Forward Transconductance VDS = 5 V, ID = 17.7 A 1.0 1.9 -6 5.8 6.0 12.6 12.8 8.8 84 7.5 7.7 17.0 17.2 11.4 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 1120 238 221 0.9 1490 320 335 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 13 V, ID = 17.7 A VDD = 13 V, ID = 17.7 A, VGS = 10 V, RGEN = 6 Ω 8 5 18 3 20 12 3.5 4.9 16 10 33 10 29 17 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 3.1 A VGS = 0 V, IS = 17.7 A (Note 2) (Note 2) 0.8 0.9 17 5 1.2 1.3 31 10 V ns nC IF = 17.7 A, di/dt = 100 A/µs ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C 2 www.fairchildsemi.com FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 32 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 19 A. ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C 3 www.fairchildsemi.com FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 100 VGS = 10 V VGS = 4.5 V 5 VGS = 6 V VGS = 4 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID, DRAIN CURRENT (A) 4 VGS = 3.5 V VGS = 4 V 60 40 3 VGS = 4.5 V 2 1 0 0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3.5 V VGS = 6 V 20 0 0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10 V 0.5 1.0 1.5 2.0 2.5 3.0 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 SOURCE ON-RESISTANCE (mΩ) 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 ID = 17.7 A VGS = 10 V 25 20 15 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX rDS(on), DRAIN TO ID = 17.7 A TJ = 150 oC 10 5 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 25 oC 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 100 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 0 V VDS = 3 V 10 TJ = 25 oC TJ = 175 oC 60 40 20 TJ = 175 oC 1 TJ = -55 oC TJ = 25 oC TJ = -55 oC 0 0 1 2 3 4 5 6 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C 4 www.fairchildsemi.com FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 17.7 A 3000 Ciss 8 VDD = 10 V 1000 CAPACITANCE (pF) 6 VDD = 13 V Coss Crss 4 VDD = 16 V 100 f = 1 MHz VGS = 0 V 2 0 0 4 8 12 16 20 24 Qg, GATE CHARGE (nC) 30 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 45 VGS = 10 V TJ = 25 oC 10 TJ = 125 oC 30 Limited by Package 15 VGS = 4.5 V RθJC = 3.8 C/W o TJ = 150 oC 1 0.0001 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 o 150 175 tAV, TIME IN AVALANCHE (ms) Tc, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 10 us 100 us P(PK), PEAK TRANSIENT POWER (W) VGS = 10 V 1000 SINGLE PULSE RθJC = 3.8 oC/W 10 THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms 100 ms DC 1 100 TC = 25 oC SINGLE PULSE TJ = MAX RATED Rθ JC = 3.8 oC/W TC = 25 C o 0.1 1 10 VDS, DRAIN to SOURCE VOLTAGE (V) 50 10 -5 10 10 -4 10 -3 10 -2 10 -1 1 10 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C 5 www.fairchildsemi.com FDD6776A / FDU6776A_F071 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RθJC = 3.8 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.001 -5 10 10 -4 10 -3 10 -2 10 -1 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE RθJA = 96 C/W o t1 t2 OTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C 6 www.fairchildsemi.com FDD6776A /FDU6776A_F071 N-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2009 Fairchild Semiconductor Corporation FDD6776A / FDU6776A_F071 Rev.C www.fairchildsemi.com