FDU8796_F071

FDD8796/FDU8796 N-Channel PowerTrench® MOSFET 25V, 35A, 5.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V „ Avalanche rated and 100% tested A R EE I DF M ENTATIO LE N MP Application LE „ Low gate resistance „ RoHS Compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D G S Short Lead I-PAK I-PAK G D S (TO-251AA) S MOSFET Maximum Ratings TC= 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 25 Units V VGS Gate to Source Voltage ±20 V Drain Current 35 ID -Continuous (Package Limited) -Continuous (Die Limited) 98 -Pulsed (Note 1) EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature A 305 (Note 2) 91 mJ 88 W -55 to 175 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO_252, TO_251 1.7 °C/W RθJA Thermal Resistance, Junction to Ambient TO_252, TO_251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Package Marking and Ordering Information Device Marking FDD8796 Device FDD8796 Package TO-252AA Reel Size 13’’ Tape Width 16mm Quantity 2500 units FDU8796 FDU8796 TO-251AA N/A (Tube) N/A 75 units FDU8796 FDU8796_F071 TO-251AA N/A (Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation FDD8796/FDU8796 Rev. 1.1 1 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 25 V mV/°C 7 1 TJ = 150°C 250 µA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -6.7 VGS = 10V, ID = 35A 4.5 5.7 VGS = 4.5V, ID = 35A 6.0 8.0 VDS = 10V, ID = 35A TJ = 175°C 6.9 9.5 1960 2610 pF 455 605 pF 315 475 pF rDS(on) Drain to Source On Resistance 1.2 1.8 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz Ω 1.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD =13V, ID = 35A VGS = 10V, RGS = 20Ω VGS = 0 to10V VGS = 0 to 5V VDD =13V, ID = 35A, Ig = 1.0mA 10 20 ns 24 39 ns 99 158 ns 57 91 ns 37 52 nC 19 27 nC 6 nC 6 nC Drain-Source Diode Characteristics VGS = 0V, IS = 35A 0.9 1.25 VGS = 0V, IS = 15A 0.8 1.0 V Reverse Recovery Time IF = 35A, di/dt = 100A/µs 30 45 ns Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 23 35 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V. FDD8796/FDU8796 Rev. 1.1 2 V www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT (A) 60 VGS = 10V 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.5V 40 VGS = 3.5V 30 20 VGS = 3V 10 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 ID = 35A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) VGS = 3.5V 2.0 VGS = 4.5V 1.5 1.0 0.5 VGS = 10V 0 10 20 30 40 50 ID, DRAIN CURRENT(A) 60 70 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID =35A 12 10 TJ = 175oC 8 6 4 TJ = 25oC 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 70 ID, DRAIN CURRENT (A) 2.5 2 200 Figure 3. Normalized On Resistance vs Junction Temperature PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 60 50 TJ = 175oC 40 30 TJ = 25oC 20 TJ = -55oC 10 0 3.0 14 1.8 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 3V 3.5 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 4.0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ = 175oC TJ = -55oC 1 TJ = 25oC 0.1 0.01 1E-3 0.0 0.3 0.6 0.9 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDD8796/FDU8796 Rev. 1.1 VGS = 0V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 6 VDD = 13V 4 VDD = 16V 2 Coss Crss f = 1MHz VGS = 0V 0 0 10 20 30 Qg, GATE CHARGE(nC) 100 0.1 40 Figure 7. Gate Charge Characteristics 100 10 ID, DRAIN CURRENT (A) TJ = 25oC TJ = 125oC TJ = 150oC 80 VGS = 10V 60 VGS = 4.5V 40 20 o RθJC = 1.7 C/W 1 0.01 0.1 1 10 0 25 100 300 tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) 10000 10us 100 100us 10 LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 1 1ms SINGLE PULSE TJ = MAX RATED 10ms DC TC = 25oC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 11. Forward Bias Safe Operating Area FDD8796/FDU8796 Rev. 1.1 175 Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 ID, DRAIN CURRENT (A) 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 50 IAS, AVALANCHE CURRENT(A) 1000 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 100 50 -5 10 I = I25 175 – TC ----------------------150 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION(s) Figure 13. Transient Thermal Response Curve FDD8796/FDU8796 Rev. 1.1 5 www.fairchildsemi.com FDD8796/FDU8796 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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