FDW2509NZ
January 2005
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
• 7.1 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 2.5 V Extended VGSS range (±12V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
• •
Applications
Li-Ion Battery Pack
•
•
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±12
(Note 1a)
Units
V A W °C
7.1 30 1.6 1.1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
77 114
°C/W
Package Marking and Ordering Information
Device Marking 2509NZ
©2005 Fairchild Semiconductor Corporation
Device FDW2509NZ
Reel Size 13’’
Tape width 12mm
Quantity 3000 units
FDW2509NZ Rev C(W)
FDW2509NZ
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSS
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA
Min
20
Typ
Max Units
V
Off Characteristics
ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 11 1 ± 10 mV/°C µA µA
VGS = ±12 V, VDS = 0 V ID = 250 µA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS,
0.6
0.8 –3 15 18 20
1.5
V mV/°C
ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 7.1 A VGS = 2.5 V, ID = 6.2 A VGS = 4.5 V, ID = 7.1A, TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 7.1 A
20 26 29
mΩ
ID(on) gFS
(Note 4)
30 36
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
1263 327 179 1.9
pF pF pF Ω
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6 Ω
11 15 27 12 13 2 4
20 27 43 22 19
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 7.1 A,
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 7.1 A, IS = 1.3 A
(Note 2)
1.3 1.2 20 14
A V nS nC
diF/dt = 100 A/µs
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. ID(on) parameter is guaranteed by design and will not be subjected to 100% production testing. Please refer to Fig 1 (On-Region Characteristics).
FDW2509NZ Rev. C(W)
FDW2509NZ
Typical Characteristics
30 25 ID, DRAIN CURRENT (A) 20
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V 3.5V
1.8
2.5V 2.0V
VGS = 2.0V
1.6
1.8V
15 10 5 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
2.5V
1.2
3.0V 3.5V 4.5V
1
0.8 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 7.1A VGS = 4.5V 1.4
ID = 3.6A
0.04
1.2
0.03
TA = 125oC TA = 25 C
o
1
0.8
0.02
0.6 -50 -25 0 25 50 75 100
o
125
150
0.01 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
30 VDS = 5V 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55oC 25o
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
125oC
VGS = 0V
10
TA = 125oC
1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
25oC -55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW2509NZ Rev. C(W)
FDW2509NZ
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.1A 4 CAPACITANCE (pF) 15V 3 VDS = 5V 10V
2000 f = 1MHz VGS = 0 V 1500 CISS 1000 COSS 500 CRSS
2
1
0 0 4 8 Qg, GATE CHARGE (nC) 12 16
0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT 100us ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s DC VGS = 4.5V SINGLE PULSE RθJA = 114oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
40
SINGLE PULSE RθJA = 114°C/W TA = 25°C
30
1
20
0.1
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RθJA(t) = r(t) * RθJA RθJA =114 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW2509NZ Rev. C(W)
TRADEMARKS
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I15