FDW2512NZ_08

FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET e May 2008 FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features ! 6A, 20V rDS(ON) = 0.028Ω, VGS = 4.5V rDS(ON) = 0.036Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profile TSSOP-8 package General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications ! Load switch ! Battery charge ! Battery disconnect circuits D1 G2 S2 S2 D2 G1 S1 S1 D1 D2 G1 G2 S1 S2 Pin 1 TSSOP-8 ©2008 Fairchild Semiconductor Corporation FDW2512NZ Rev. A1 1 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 4.5V, RθJA = 77oC/W) Continuous (TC = 100oC, VGS = 2.5V, Rθ JA = 77oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25°C Operating and Storage Temperature Ratings 20 ±12 6.0 3.3 Figure 4 1.6 13 -55 to 150 Units V V A A A W mW/oC o ID C Thermal Characteristics RθJA RθJA Thermal Resistance Junction to Ambient (Note 1) Thermal Resistance Junction to Ambient (Note 2) 77 114 o C/W oC/W Package Marking and Ordering Information Device Marking 2512NZ 2 Device FDW2512NZ Package TSSOP-8 Reel Size 13” Tape Width 12 mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 16V VGS = 0V VGS = ±12V VGS = ±4.5V TA=100oC 20 1 5 ±10 ±250 V µA µA nA On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 6.0A, VGS = 4.5V Drain to Source On Resistance ID = 5.9A, VGS = 4.0V ID = 5.3A, VGS = 3.1V ID = 5.3A, VGS = 2.5V 0.6 0.8 0.017 0.018 0.019 0.022 1.5 0.028 0.029 0.035 0.036 V Ω Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(2.5) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 4.5V Total Gate Charge at 2.5V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 10V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 4.5V VGS = 0V to 2.5V VDD = 10V ID = 6.0A Ig = 1.0mA 670 170 115 4.2 8 5.1 1.1 2.2 12 7.6 pF pF pF Ω nC nC nC nC FDW2512NZ Rev. A1 2 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Switching Characteristics tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time (VGS = 4.5V) VDD = 10V, ID = 6.0A VGS = 4.5V, RGS = 16Ω 8 57 47 58 98 158 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Notes: 1. RθJA is 77 oC/W (steady state) when mounted on a 1 inch2 copper pad on FR-4. 2. RθJA is 114 oC/W (steady state) when mounted on a mininum copper pad on FR-4. 3. The diode connected to the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4 Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 1.3A ISD = 6.0A, dISD/dt = 100A/µs ISD = 6.0A, dISD/dt = 100A/µs - 0.7 - 1.2 24 13 V ns nC FDW2512NZ Rev. A1 3 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristic 1.2 TA = 25°C unless otherwise noted 8 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 6 VGS = 4.5V 4 VGS = 2.5V 2 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) TA, AMBIENT TEMPERATURE (oC) 0 Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 THERMAL IMPEDANCE DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Ambient Temperature ZθJA, NORMALIZED 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t, RECTANGULAR PULSE DURATION (s) Figure 3. Normalized Maximum Transient Thermal Impedance 400 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TA 125 VGS = 2.5V IDM, PEAK CURRENT (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100 10 5 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 102 103 Figure 4. Peak Current Capability FDW2512NZ Rev. A1 4 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristic (Continued) TA = 25°C unless otherwise noted 400 100 ID, DRAIN CURRENT (A) 100µs ID , DRAIN CURRENT (A) 30 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 10V 1ms 10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 0.5 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE TJ = MAX RATED TA = 25oC 20 TJ = 150oC 10 TJ = 25oC TJ = -55oC 0 1.0 1.5 2.0 2.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 40 VGS = 10V ID, DRAIN CURRENT (A) 30 VGS = 4.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TA = 25oC 10 60 Figure 6. Transfer Characteristics rDS(ON), DRAIN TO SOURCE ON RESISTANCE (mΩ) VGS = 2.5V ID = 6 A 45 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 ID = 1 A 30 VGS = 1.8V 0 0 0.5 1.0 1.5 VDS , DRAIN TO SOURCE VOLTAGE (V) 15 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Saturation Characteristics Figure 8. Drain to Source On Resistance vs Gate Voltage and Drain Current 1.25 1.50 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250µA 1.25 1.00 1.00 0.75 VGS = 4.5V, ID = 6A 0.75 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0.50 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature FDW2512NZ Rev. A1 5 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristic (Continued) TA = 25°C unless otherwise noted 1.10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250µA C, CAPACITANCE (pF) CISS = CGS + CGD 1000 1.05 COSS ≅ CDS + CGD 200 1.00 CRSS = CGD VGS = 0V, f = 1MHz 0.95 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 70 0.1 1 VDS , DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 4.5 VGS , GATE TO SOURCE VOLTAGE (V) VDD = 10V Figure 12. Capacitance vs Drain to Source Voltage 3.0 1.5 WAVEFORMS IN DESCENDING ORDER: ID = 1A ID = 6A 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) Figure 13. Gate Charge Waveforms for Constant Gate Currents FDW2512NZ Rev. A1 6 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS RG IAS VDD VDD tP VDS + tP 0V DUT IAS 0.01Ω 0 tAV Figure 14. Unclamped Energy Test Circuit VDS RL Figure 15. Unclamped Energy Waveforms VDD Qg(TOT) VDS VGS VGS = 5V VGS + VDD Qgs2 DUT Ig(REF) VGS = 1V 0 Qg(TH) Qgs Ig(REF) 0 Qgd Figure 16. Gate Charge Test Circuit Figure 17. Gate Charge Waveforms tON RL VDS VGS VGS + tOFF td(OFF) tr tf 90% td(ON) VDS 90% 0V RGS DUT 90% VGS 0 10% 50% PULSE WIDTH 50% 0 10% 10% Figure 18. Switching Time Test Circuit Figure 19. Switching Time Waveforms FDW2512NZ Rev. A1 7 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET PSPICE Electrical Model .SUBCKT FDW2512NZ 2 1 3 ; CA 12 8 8.8e-10 CB 15 14 8.8e-10 CIN 6 8 0.5e-9 DBODY 5 7 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD DESD1 91 9 DESD1MODE DESD2 91 7 DESD2MOD EBREAK 7 11 17 18 22.2 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 8 6 1 EVTHRES 6 21 19 8 1 EVTEMP 6 20 18 22 1 LGATE IT 8 17 1 GATE LDRAIN 2 5 1e-9 1 LGATE 1 9 1.49e-9 RLGATE LSOURCE 3 7 0.2e-9 RLDRAIN 2 5 10 RLGATE 1 9 14.9 RLSOURCE 3 7 2.0 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 13.1e-3 RGATE 9 20 5.57 CA RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 2e-4 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD rev July 2004 LDRAIN DPLCAP 10 RSLC2 RSLC1 51 ESLC 50 EBREAK DBREAK RLDRAIN 5 DRAIN 2 5 51 ESG + EVTEMP 9 RGATE + 18 22 20 DESD1 91 DESD2 6 8 EVTHRES + 19 8 6 MSTRO CIN 8 RSOURCE RLSOURCE LSOURCE 7 SOURCE 3 S1A 12 S1B 13 + EGS 6 8 13 8 S2A 14 13 S2B CB + EDS 5 8 14 IT 15 17 - - VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*120),2.5))} .MODEL DBODYMOD D (IS = 7.3e-12 N=0.93 RS = 20.6e-3 IKF=0.2 TRS1 = 1.7e-3 TRS2 = 2e-6 XTI=0.2 TIKF=0.001 CJO =2.0e-10 TT=1.05e-8 M = 0.58) .MODEL DBREAKMOD D (RS = 1e-1 TRS1 = 9e-3 TRS2 = -2e-5) .MODEL DPLCAPMOD D (CJO = 0.37e-9 IS = 1e-30 N = 10 M = 0.51) MODEL DESD1MOD D (BV=14 RS=1) MODEL DESD2MOD D (BV=14 N=1.3 RS=1) .MODEL MMEDMOD NMOS (VTO = 0.96 KP = 1.98 IS=1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 5.57) .MODEL MSTROMOD NMOS (VTO = 1.2 KP = 72 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 0.72 KP = 0.02 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 55.7 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 6e-4 TC2 = -5e-7) .MODEL RDRAINMOD RES (TC1 = 6e-4 TC2 = 1.2e-5) .MODEL RSLCMOD RES (TC1 = 1e-9 TC2 = 1e-8) .MODEL RSOURCEMOD RES (TC1 = 8.2e-2 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -13e-4 TC2 = -2.5e-6) .MODEL RVTEMPMOD RES (TC1 = -1.0e-3 TC2 = 1e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= -5) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.4 VOFF= 0.4) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.4 VOFF= -0.4) ENDS Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. FDW2512NZ Rev. A1 8 + 11 + 17 18 DBODY - RDRAIN 16 21 MWEAK MMED RBREAK 18 RVTEMP 19 VBAT + 8 22 RVTHRES www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET SABER Electrical Model REV July 2004 template fdw2512nz n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl = 7.3e-12, nl=0.93, rs = 20.6e-3, trs1 = 1.7e-3, trs2 = 2e-6, xti=0.2, cjo = 2.0e-10, ikf=0.2, tt = 1.05e-8, m = 0.58, tikf=0.001) dp..model dbreakmod = (rs = 1e-1, trs1 = 9e-3, trs2 = -2.0e-5) dp..model dplcapmod = (cjo = 0.37e-9, isl=10e-30, nl=10, m=0.51) dp..model desd1mod = (bv=14, rs=1) dp..model desd2mod = (bv=14, nl=1.3, rs=1) m..model mmedmod = (type=_n, vto = 0.96, kp=1.98, is=1e-30, tox=1) m..model mstrongmod = (type=_n, vto = 1.2, kp = 72, is = 1e-30, tox = 1) m..model mweakmod = (type=_n, vto = 0.72, kp = 0.02, is = 1e-30, tox = 1, rs=0.1) sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5, voff = -1.5) LDRAIN DPLCAP 5 sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = -5 ) DRAIN 2 sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.4, voff = 0.4) 10 sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.4, voff = -0.4) RLDRAIN c.ca n12 n8 = 8.8e-10 c.cb n15 n14 = 8.8e-10 c.cin n6 n8 = 0.5e-9 RSLC1 51 RSLC2 ISCL 50 6 8 + GATE 1 EVTEMP RGATE + 18 22 9 20 RLGATE DESD1 91 DESD2 LGATE 6 MSTRO CIN 8 RSOURCE RLSOURCE S1A 12 13 8 S1B CA 13 + EGS 6 8 EDS S2A 14 13 S2B CB + 5 8 14 IT 15 17 RBREAK 18 RVTEMP 19 RDRAIN EVTHRES + 19 8 21 16 MWEAK MMED EBREAK + 17 18 DBREAK 11 DBODY dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod dp.desd1 n91 n9 = model=desd1mod dp.desd2 n91 n7 = model=desd2mod spe.ebreak n11 n7 n17 n18 = 22.2 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 i.it n8 n17 = 1 l.ldrain n2 n5 = 1e-9 l.lgate n1 n9 = 1.49e-9 l.lsource n3 n7 = 0.2e-9 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 14.9 res.rlsource n3 n7 = 2.0 ESG - LSOURCE 7 SOURCE 3 VBAT + - - 8 RVTHRES 22 m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1 = 6e-4, tc2 = -5e-7 res.rdrain n50 n16 = 13.1e-3, tc1 = 6e-4, tc2 = 1.2e-5 res.rgate n9 n20 = 5.57 res.rslc1 n5 n51= 1e-6, tc1 = 1e-9, tc2 =1e-8 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 2e-4, tc1 = 8.2e-2, tc2 =1e-6 res.rvtemp n18 n19 = 1, tc1 = -1.0e-3, tc2 = 1e-6 res.rvthres n22 n8 = 1, tc1 = -13e-4, tc2 = -2.5e-6 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/120))** 2.5)) } } FDW2512NZ Rev. A1 9 www.fairchildsemi.com FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET SPICE Thermal Model REV July 2004 FDW2512NZ_JA Junction Ambient Minimum copper pad area CTHERM1 Junction c2 5.7e-4 CTHERM2 c2 c3 5.72e-4 CTHERM3 c3 c4 5.8e-4 CTHERM4 c4 c5 4.7e-3 CTHERM5 c5 c6 5.1e-3 CTHERM6 c6 c7 0.02 CTHERM7 c7 c8 0.2 CTHERM8 c8 Ambient 6 RTHERM1 Junction c2 0.003 RTHERM2 c2 c3 0.25 RTHERM3 c3 c4 1.0 RTHERM4 c4 c5 1.1 RTHERM5 c5 c6 7.5 RTHERM6 c6 c7 33.6 RTHERM7 c7 c8 33.7 RTHERM8 c8 Ambient 33.8 th JUNCTION RTHERM1 2 CTHERM1 RTHERM2 3 CTHERM2 RTHERM3 4 CTHERM3 RTHERM4 5 CTHERM4 SABER Thermal Model SABER thermal model FDW2512NZ Minimum copper pad area template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th c2 = 5.7e-4 ctherm.ctherm2 c2 c3 = 5.72e-4 ctherm.ctherm3 c3 c4 = 5.8e-4 ctherm.ctherm4 c4 c5 = 4.7e-3 ctherm.ctherm5 c5 c6 = 5.1e-3 ctherm.ctherm6 c6 c7 = 0.02 ctherm.ctherm7 c7 c8 = 0.2 ctherm.ctherm8 c8 tl = 6 rtherm.rtherm1 th c2 = 0.003 rtherm.rtherm2 c2 c3 = 0.25 rtherm.rtherm3 c3 c4 = 1.0 rtherm.rtherm4 c4 c5 = 1.1 rtherm.rtherm5 c5 c6 = 7.5 rtherm.rtherm6 c6 c7 = 33.6 rtherm.rtherm7 c7 c8 = 33.7 rtherm.rtherm8 c8 tl = 33.8 } RTHERM5 CTHERM5 6 RTHERM6 7 CTHERM6 RTHERM7 8 CTHERM7 RTHERM8 CTHERM8 tl AMBIENT FDW2512NZ Rev. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDW2512NZ Rev. A1 WWW. fairchildsemicom