FDZ5047N

FDZ5047N January 2004 FDZ5047N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features • 22 A, 30 V. RDS(ON) = 2.9 mΩ @ VGS = 10 V RDS(ON) = 4.5 mΩ @ VGS = 4.5 V • Occupies only 27.5 mm of PCB area: 1/5 of the area of a TO-220 package • Ultra-thin package: less than 0.90 mm height when mounted to PCB • Outstanding thermal transfer characteristics • Ultra-low gate charge x RDS(ON) product 2 Applications • DC/DC converters • Solenoid drive D D D D D Pin 1 D S S S S G D S S S S D S S S S D S S S S D D D D D D F 50 4 7 Pin 1 G D S S S D Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±20 (Note 1a) Units V A W °C 22 75 2.8 –50 to +150 Total Power Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 44 2.7 0.3 °C/W Package Marking and Ordering Information Device Marking 5047N 2004 Fairchild Semiconductor Corporation. Device FDZ5047N Reel Size 13’’ Tape width 12mm Quantity 3000 units FDZ5047N Rev D4 (W) FDZ5047N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr • TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Forward Leakage Gate–Body Reverse Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min 30 Typ Max Units V Off Characteristics ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = –20 V, VDS = VGS, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µA 1 1.3 –5 2.3 3.2 3.4 100 4993 1144 498 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 11 12 119 55 VDS = 15 V, VGS = 5 V ID = 22 A, 52 11 17 2.3 0.7 42 59 1.2 20 22 190 88 73 2.9 4.5 5.0 24 1 100 –100 3 mV/°C µA nA nA V mV/°C mΩ S pF pF pF ns ns ns ns nC nC nC A V nS nC On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 22 A ID = 18 A VGS = 4.5 V, VGS = 10 V, ID = 22 A, TA=125°C VDS = 10 V, ID = 22 A VDS = 15 V, f = 1.0 MHz VGS = 0 V, Dynamic Characteristics Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current (Note 1a) Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Notes: VGS = 0 V, IS = 2.3 A (Note 2) IF = 22A, diF/dt = 100 A/µs 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design. a) 44°C/W when mounted on a 1in2 pad of 2 oz copper b) 95°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ5047N Rev D4 (W) FDZ5047N Typical Characteristics 100 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS =10V 4.5V 3.0V 3.5V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 ID, DRAIN CURRENT (A) 80 VGS = 3.0V 60 3.5V 40 2.5V 4.5V 6.0V 10V 20 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 22A VGS = 10V ID = 1 1 A 0.012 0.008 TA = 125 C 0.004 o TA = 25 C 0.000 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o Figure 3. On-Resistance Variation with Temperature. 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25 C -55 C o o o VDS = 10V ID, DRAIN CURRENT (A) 60 40 o TA = 125 C 20 25 C -55 C o o 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ5047N Rev D4 (W) FDZ5047N Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) 8000 ID = 22A VDS =10V 15V CAPACITANCE (pF) 20V 6000 CISS 4000 COSS 2000 f =1MHz VGS = 0V 8 6 4 2 0 0 20 40 60 80 100 Qg, GATE CHARGE (nC) 0 0 CRSS 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100ms 1s 10s DC VGS = 10V SINGLE PULSE RθJA = 95oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 10ms 1ms Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 40 SINGLE PULSE RθJA = 95°C/W TA = 25°C 30 1 20 0.1 10 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 95 °C/W P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ5047N Rev D4 (W) FDZ5047N Dimensional Outline and Pad Layout FDZ5047N Rev D4 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I7