FDZ7064S

FDZ7064S May 2004 FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON).   Features • 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V RDS(ON) = 9 mΩ @ VGS = 4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.8 mm height when mounted to PCB • 3.5 x 4 mm2 Footprint • High power and current handling capability. D Applications • DC/DC converters D D D D D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 F7064S G Pin 1 D S Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings 30 ±16 13.5 60 2.2 –55 to +150 Units V V A W °C Thermal Characteristics ¦ £¡ ¢ ¥ £¡ ¢ ¤ £¡ ¢ R R R Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 °C/W Package Marking and Ordering Information Device Marking 7064S Device FDZ7064S Reel Size 13” Tape width 12mm Quantity 3000 ©2004 Fairchild Semiconductor Corporation FDZ7064S Rev. B2 (W) FDZ7064S Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25° unless otherwise noted C Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 1mA Min 30 Typ Max Units V Off Characteristics ID = 10mA, Referenced to 25° C VDS = 24 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = VGS, ID = 1mA 1 1.4 –0.5 6 7 9 66 2840 525 190 VGS = 15 mV, ID = 6 A (Note 2) 26 500 ±100 3 mV/° C uA nA V mV/° C 7 9 11 mΩ On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge ID = 10mA, Referenced to 25° C VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 12 A VGS=10 V, ID=13.5A, TJ =125°C VDS = 5 V, ID = 13.5 A gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr S pF pF pF Ω 20 22 80 32 35 ns ns ns ns nC nC nC 0.7 V ns nC Dynamic Characteristics VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1.9 11 12 § (Note 1) b) Switching Characteristics VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 50 18 VDS = 15 V, VGS = 5 V ID = 13.5 A, 25 7 6 VGS = 0 V, IS = 3.2 A 0.4 22 19 Drain–Source Diode Characteristics IF = 13.5 A, diF/dt = 300 A/µs See Diode Characteristic, page 5 Notes: 1. R is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, R , is defined for reference. For R , the thermal reference point for the case is defined as the top surface of the a) 56° C/W when mounted on a 1in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ7064S Rev. B2 (W) ©2004 Fairchild Semiconductor Corporation  ¨ ©  ¨ ©  ¨ © copper chip carrier. R and R are guaranteed by design while R is determined by the user' board design. s 119° C/W when mounted on a minimum pad of 2 oz copper  ¨ ©  ¨ ©  ¨ © Scale 1 : 1 on letter size paper FDZ7064S Typical Characteristics 60.00 50.00 ID, DRAIN CURRENT (A) 40.00 30.00 20.00 10.00 2.0V 0.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 2.25 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10.0 V 6.0V 3.0V 3.5V 4.5V 2.5V VGS = 2.5V 2 1.75 1.5 1.25 1 0.75 0 10 20 30 40 50 60 3.0V 3.5V 4.0V 4.5V 6.0V 10.0V VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 40 RDS(ON), ON-RESISTANCE (MILLIOHM) 1.60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 13.5A VGS = 10V ID =6.8A 30 1.40 1.20 20 1.00 TA = 125oC 10 0.80 TA = 25oC 0 0.60 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC TA = 125oC TA = 125 C 25 C o o -55oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ7064S Rev B2 (W) FDZ7064S Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13.5A 8 VDS = 10V 4000 f = 1MHz VGS = 0 V CAPACITANCE (pF) 3000 Ciss 2000 Coss Crss 0 0 10 20 30 40 50 0 5 10 15 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) 6 15V 20V 4 2 1000 0 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 100 10ms 100ms 1s 1 VGS = 10V SINGLE PULSE RθJA = 119oC/W TA = 25oC DC 10s 1ms 40 SINGLE PULSE RθJA = 119°C/W TA = 25° C 10 30 20 0.1 10 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RθJA(t) = r(t) * RθJA RθJA = 119 ° C/W P(pk) t1 t2 0.01 0.01 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ7064S Rev B2 (W) FDZ7064S Typical Characteristics SyncFET Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDZ7064S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 TA = 125oC 0.01 CURRENT : 0.4A/div 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDZ7064S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET . CURRENT : 0.4A/div Figure 13. Non-SyncFET (FDZ7064N) body diode reverse recovery characteristic. FDZ7064S Rev B2 (W) FDZ7064S Dimensional Outline and Pad Layout FDZ7064S Rev B2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11