FGL60N100D

FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications Features • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGL60N100D 1000 ± 25 60 42 120 15 176 70 -55 to +150 -55 to +150 300 Units V V A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.71 2.08 25 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation FGL60N100D Rev. A FGL60N100D Electrical Characteristics of IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current VCE = 1000V, VGE = 0V VGE = ± 25, VCE = 0V ----1.0 ± 500 mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V 4.0 --5.0 1.6 2.5 7.0 2.0 2.9 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz ---6300 160 140 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600V, IC = 60A, RG = 51Ω, VGE=15V, Resistive Load, TC = 25°C VCE = 600 V, IC = 60A, VGE = 15V -------160 360 410 240 230 45 80 400 700 700 330 300 --ns ns ns ns nC nC nC Electrical Characteristics of DIODE T Symbol VFM trr IR Parameter Diode Forward Voltage Diode Reverse Recovery Time Instantaneous Reverse Current C = 25°C unless otherwise noted Test Conditions IF = 15A IF = 60A IF = 60A di/dt = -20A/us VRRM = 1000V Min. ---- Typ. 1.2 1.8 1.2 0.05 Max. 1.7 2.1 1.5 2 Units V V us uA ©2002 Fairchild Semiconductor Corporation FGL60N100D Rev. A FGL60N100D 100 Common Emitter TC=25℃ 80 8V 9V 10V 15V 100 Common Emitter VGE=15V 25 ℃ 125 ℃ 80 Collector Current, IC [A] 60 20V 7V Collector Current, IC [A] 60 40 40 20 VGE=6V 20 0 0 1 2 3 4 5 0 0 1 2 3 4 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 10 Common Emitter VGE=15V Common Emitter TC= - 40 C O Collector-Emitter Voltage, VCE[V] [V] Collector-Emitter Voltage, V CE 3 8 80A 60A 6 30A 60A 80A 2 IC=10A 0 2 4 30A IC=10A 1 -50 0 50 100 150 4 8 12 16 20 Case Temperature, TC [℃] Gate-Emitter Voltage, VGE [V] Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level Fig 4. Saturation Voltage vs. VGE 10 Common Emitter TC=25 ℃ 10 Common Emitter TC=125 ℃ Collector-Emitter Voltage, VCE[V] 8 Collector-Emitter Voltage, VCE[V] 8 6 30A 4 60A 80A 2 IC=10A 0 4 8 12 16 20 6 30A 60A 80A 4 2 IC=10A 0 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGL60N100D Rev. A FGL60N100D 10000 Cies 10000 VCC=600V, IC=60A VGE =± 15V Switching Time [ns] Capacitance [pF] 1000 1000 100 Tr Tf Tdoff Tdon Coes Common Emitter VGE = 0V, f = 1MHz TC = 25 ℃ 0.1 1 100 Cres 10 10 0 50 100 150 200 Collector-Emitter Voltage [V] Gate Resistance, RG [Ω ] Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs. Gate Resistance 20 1000 VCC=600V, Rg=51Ω VGE=± 15V, TC=25℃ Common Emitter VCC=600V, RL=10 Ω TC=25 ℃ Tdoff Gate-Emitter Voltage,VGE [V] 15 Switching Time [ns] 10 5 Tf Tr Tdon 0 100 10 20 30 40 50 60 0 50 100 150 200 250 300 Collector Current, IC [A] Gate Charge, Qg [nC] Fig 9. Switching Characteristics vs. Collector Current Fig 10. Gate Charge Characteristics 10 IC MAX. (Pulsed) 100 50us Thermal Response, Z θJC [℃/W] IC MAX. (Continuous) Collector Current , I C [A] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 100us 10 1ms DC Operation 1 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 0.01 single pulse 1E-3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Collector-Emitter Voltage, VCE [V] Rectangular Pulse Duration [sec] Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation FGL60N100D Rev. A FGL60N100D 100 1.2 IF=60A TC=25℃ 1.0 120 Reverse Recovery Time, trr [㎲ ] 100 Reverse Recovery Current, I rr [A] Forward Current, I F[A] 10 TC = 100 ℃ TC = 25 ℃ 0.8 trr 0.6 80 60 1 0.4 40 0.2 Irr 20 0.1 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0 40 80 120 160 200 0 240 Forward Voltage, VFM [V] di/dt [A/㎲ ] Fig 13. Forward Characteristics Fig 14. Reverse Recovery Characteristics vs. di/dt 1.2 Reverse Recovery Time, t rr [㎲ ] di/dt=-20A/㎲ TC=25℃ 1000 12 Reverse Recovery Current, I rr [A] 100 1.0 trr 0.8 10 Reverse Current, IR [uA] TC = 150℃ 10 Irr 8 1 0.6 6 0.1 T C= 25℃ 0.01 0.4 4 1E-3 0 300 600 900 10 20 30 40 50 60 Forward Current, IF [A] Reverse Voltage, VR [V] Fig 15. Reverse Recovery Characteristics vs. Forward Current Fig 16. Reverse Current vs. Reverse Voltage 250 T C = 25 ℃ 200 Capacitance, Cj [pF] 150 100 50 0 0.1 1 10 100 Reverse Voltage, VR [V] Fig 17. Junction capacitance ©2002 Fairchild Semiconductor Corporation FGL60N100D Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5