FJC1308

FJC1308 PNP Epitaxial Silicon Transistor July 2005 FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 13 PY 1 08 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) TC = 25°C unless otherwise noted Parameter Value -30 -30 -6 -3 0.5 150 - 55 ~ 150 Units V V V A W °C °C Power Dissipation(TC=25°C) Junction Temperature Storage Temperature C= Electrical Characteristics T Symbol BVCBO BVCEO BVEBO ICEO IEBO hFE VCE(sat) VBE(sat) 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = -50µA, IE = 0 IC = -1mA, IB = 0 IE = -50µA, IC = 0 VCE = -20V, VB = 0 VEB = -5V, IC = 0 VCE = -2V, IC= -0.5A IC =-1.5, IB = -0.15A IC = -1.5, IB = -0.15A Min. -30 -30 -6 Max. Units V V V -0.5 -0.5 80 390 -0.45 -1.5 µA µA V V ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJC1308 Rev. B1 FJC1308 PNP Epitaxial Silicon Transistor hFE Classification Classification hFE P 80 ~ 180 Q 120 ~ 270 R 180 ~ 390 Package Marking and Ordering Information Device Marking 1308 Device FJC1308 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 FJC1308 Rev. B1 2 www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic -1400 Figure 2. DC Current Gain IB = -7mA 1000 IC [mA], COLLECTOR CURRENT -1200 IB = -6mA IB = -5mA -800 Ta = 125°C VCE = - 2V IB = -4mA IB = -3mA IB = -2mA IB = -1mA 0 -2 -4 -6 -8 -10 -12 -14 -16 hFE, DC CURRENT GAIN -1000 Ta = 25°C 100 Ta = - 40°C -600 -400 -200 0 10 -10m -100m -1 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage -10 Figure 4. Base-Emitter Saturation Voltage -10 VCE(sat) [V], SATURATION VOLTAGE -1 Ta = 125°C -100m VBE(sat) [V], SATURATION VOLTAGE IC = 10 IB IC = 10 IB -1 Ta = - 40°C Ta = 25°C Ta = - 40°C -10m Ta = 125°C Ta = 25°C -1m -1m -10m -100m -1 -10 -0.1 -1m -10m -100m -1 -10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage -1.8 -1.6 Figure 6. Power Derating 0.7 VCE = - 2V PC [W], COLLECTOR POWER DISSIPATION 0.6 IC [A], COLLECTOR CURRENT -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 0.5 0.4 0.3 0.2 125°C -0.2 -0.0 -0.0 25°C - 40°C 0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 0.0 0 25 50 75 100 125 150 175 VBE [V], BASE-EMITTER VOLTAGE Ta [°C], AMIBIENT TEMPERATURE FJC1308 Rev. B1 3 www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters FJC1308 Rev. B1 4 www.fairchildsemi.com FJC1308 PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 FJC1308 Rev. B1 www.fairchildsemi.com