FJC1386 PNP Epitaxial Silicon Transistor
July 2005
FJC1386
PNP Epitaxial Silicon Transistor
Low Saturation Transistor Medium Power Amplifier
• Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage
Marking
13 PY
1
86 WW
Weekly code Year code hFE grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)
Ta = 25°C unless otherwise noted
Parameter
Value
-30 -20 -6 -5 0.5 150 -55 to +150
Units
V V V A W °C °C
Power Dissipation (Ta = 25°C) Junction Temperature Storage Temperature
a=
Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat)
25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Test Condition
IC = -50µA, IE = 0 IC = -1mA, IB = 0 IE = -50µA, IC = 0 VCB = -20V, VB = 0 VEB = -5V, IC = 0 VCE = -2V, IC =-0.5A IC = -4A, IB = -0.1A IC = -4A, IB = -0.1A
Min.
-30 -20 -6
Max.
Units
V V V
-0.5 -0.5 80 390 -1.0 -1.5
µA µA V V
©2005 Fairchild Semiconductor Corporation
1
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FJC1386 Rev. C1
FJC1386 PNP Epitaxial Silicon Transistor
Thermal Characteristics
Symbol
RθJA
Ta = 25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Ambient
Max.
250
Units
°C/W
hFE Classification
Classification
hFE
P
80 ~ 180
Q
120 ~ 270
R
180 ~ 390
Package Marking and Ordering Information
Device Marking
1386
Device
FJC1386
Package
SOT-89
Reel Size
13”
Tape Width
--
Quantity
4,000
FJC1386 Rev. C1
2
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FJC1386 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
-1400
Figure 2. DC Current Gain
1000
IB = -7mA
VCE = - 2V
Ta = 125 C
o
IC [mA], COLLECTOR CURRENT
-1200
IB = -6mA
-1000
IB = -5mA
-800
hFE, DC CURRENT GAIN
Ta = 25 C
o
IB = -4mA IB = -3mA IB = -2mA IB = -1mA
0 -2 -4 -6 -8 -10 -12 -14 -16
100
Ta = - 40 C
o
-600
-400
-200
0
10 -10m
-100m
-1
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
-10
Figure 4. Base-Emitter Saturation Voltage
-10
VCE(sat) [V], SATURATION VOLTAGE
-1
Ta = 125 C
-100m
o
VBE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
IC = 10 IB
-1
Ta = - 40 C
o
Ta = 25 C Ta = - 40 C
-10m
o
o
Ta = 125 C
o
Ta = 25 C
o
-1m -1m
-10m
-100m
-1
-10
-0.1 -1m
-10m
-100m
-1
-10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
-1.8 -1.6
Figure 6. Power Derating
0.7
VCE = - 2V
PC [W], COLLECTOR POWER DISSIPATION
0.6
IC [A], COLLECTOR CURRENT
-1.4 -1.2 -1.0 -0.8 -0.6 -0.4
0.5
0.4
0.3
0.2
125°C
-0.2 -0.0 -0.0
25°C
- 40°C
0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
0.0
0
25
50
75
100
125
150
175
VBE [V], BASE-EMITTER VOLTAGE
Ta [°C], AMIBIENT TEMPERATURE
FJC1386 Rev. C1
3
www.fairchildsemi.com
FJC1386 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
4.50 ±0.20 1.65 ±0.10 C0.2
(0.50)
1.50 ±0.20 (0.40)
±0.20
2.50
0.50 ±0.10 1.50 TYP 1.50 TYP
0.40 ±0.10 0.40
+0.10 –0.05
(1.10)
4.10
±0.20
Dimensions in Millimeters
FJC1386 Rev. C1
4
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FJC1386 PNP Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™
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PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6
SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
5 FJC1386 Rev. C1
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