FJE5304D_05

FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application • Small Variance in Storage Time Equivalent Circuit C B 1 TO-126 2.Collector 3.Base E 1.Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP IB IBP PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) TC = 25°C unless otherwise noted Parameter Value 700 400 12 4 8 2 4 30 - 65 ~ 150 Units V V V A A A A W °C Collector Dissipation (TC=25°C) Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics T Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE C= 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCE = 700V, VEB = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 2A Min. 700 400 12 Typ. Max. Units V V V 100 250 100 10 8 40 µA µA µA ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJE5304D Rev. B1 FJE5304D NPN Triple Diffused Planar Silicon Transistor Electrical Characteristics (Continued) T Symbol VCE(sat) C= 25°C unless otherwise noted Parameter Collector-Emitter Saturation Voltage Test Condition IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IF = 2 A IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200µH IC = 2A, IB1 = IB2 = 0.4A TP = 30µs Min. Typ. Max. 0.7 1.0 1.5 1.1 1.2 1.3 2.5 Units V VBE(sat) Base-Emitter Saturation Voltage V Vf tstg tf Internal Diode Forward Voltage Drop Storage Time Fall Time V µs Inductive Load Switching (VCC = 200V) 0.6 0.1 Resistive Load Switching (VCC = 250V) tstg tf Storage Time Fall Time 2.9 0.2 µs * Pulse test: PW ≤ 300µs, Duty cycle ≤ 2% Thermal Characteristics Symbol RθJC RθJA TC = 25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 4.17 83.3 Units °C/W °C/W Package Marking and Ordering Information Device Marking FJE5304D Device FJE5304D Package TO-126 Reel Size -- Tape Width -- Quantity -- FJE5304D Rev. B1 2 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic 5 Figure 2. DC Current Gain 100 IC[A], COLLECTOR CURRENT 4 hFE,DC CURRENT GAIN 3 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA Vce=5V Ta=125 C 25 C o o -25 C 10 o 2 1 0 IB = 0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 10 Figure 4. Base-Emitter Saturation Voltage 10 VCE(sat)[V],SATURATION VOLTAGE Ic=5IB 25 C O 1 VBE[V],SATURATION VOLTAGE Ic=5IB Ta=125 C -25 C 0.1 O O 1 -25 C 25 C Ta=125 C O O O 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time 10 Figure 6. Inductive Load Switching Time 1000 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG 1 tSTG, tF [ns], TIME tSTG, tF [µs], TIME 100 0.1 tF tF 0.01 0.1 1 10 10 0.1 VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT FJE5304D Rev. B1 3 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Typical Performance Characteristics Figure 7. Forward Bias Safe Operating Area 100 Figure 8. Reverse Bias Safe Operating Area 100 TC=25 C o IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1µs 10µs 1 1ms DC 1 0.1 0.1 0.01 10 100 1000 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating 50 PC[W], POWER DISSIPATION 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE FJE5304D Rev. B1 4 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor Mechanical Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 ±0.30 (0.50) 1.75 ±0.20 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters FJE5304D Rev. B1 5 www.fairchildsemi.com FJE5304D NPN Triple Diffused Planar Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 6 FJE5304D Rev. B1 www.fairchildsemi.com