FJP3835

FJP3835 FJP3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 200 120 8 8 16 50 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG * Pulse Test : PW=20µs Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Test Condition IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω Min. 200 120 8 Typ. Max. Units V V V 0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68 mA mA V V MHz pF µs µs µs Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP3835 Typical Characteristics 7 1000 IB = 35mA 6 VCE = 4V IC [A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 5 TC = 125 C o TC = 75 C o 4 100 3 TC = - 25 C o TC = 25 C o IB = 10mA 2 IB = 5mA 1 0 0 2 4 6 8 10 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characterstic Figure 2. DC current Gain 1 10 VCE(sat) [V], SATURATION VOLTAGE I C = 10 I B IC = 1 0 I B 0.1 TC = - 25 C TC = 25 C TC = 75 C 0.01 o o o VBE(sat), SATURATION VOLTAGE 1 TC = - 25 C TC = 75 C TC = 125 C o o o TC = 25 C o TC = 125 C o 1E-3 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 100 100 IC[A], COLLECTOR CURRENT 10 IC MAX. (DC) 10ms 1 PC[W], POWER DISSIPATION IC MAX. (Pulse) 100ms 80 60 40 0.1 20 Single Pulse o TC=25[ C] 0.01 0.1 1 10 100 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP3835 Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I6