FJP5304D

FJP5304D — NPN Silicon Transistor July 2008 FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B 1 E TO-220 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) Collector Dissipation (TC=25°C) Storage Temperature Parameter Value 700 400 12 4 8 2 4 70 - 65 ~ 150 Units V V V A A A A W °C * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCE = 700V, VEB = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 Min. 700 400 12 100 250 100 Typ. Max. Units V V V mA mA mA © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 1 FJP5304D — NPN Silicon Transistor hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage VCE = 5V, IC = 10mA VCE = 5V, IC = 2A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IF = 2A 10 8 40 0.7 1.0 1.5 1.1 1.2 1.3 2.5 V VBE(sat) Base-Emitter Saturation Voltage V Vf Internal Diode Forward Voltage Drop V Inductive Load Switching (VCC = 200V) tstg tf Storage Time Fall Time IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200μH 0.6 0.1 μs Resistive Load Switching (VCC = 250V) tstg tf Storage Time Fall Time IC = 2A, IB1 = IB2 = 0.4A TP = 30μs 2.9 0.2 μs * Pulse test: PW≤300μs, Duty cycle≤2% Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 1.78 62.5 Units °C/W °C/W © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 2 FJP5304D — NPN Silicon Transistor Typical Characteristics 5 100 IC[A], COLLECTOR CURRENT 4 hFE,DC CURRENT GAIN 3 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA Vce=5V Ta=125 C 25 C -25 C 10 o o o 2 IB = 50mA 1 0 0 1 2 3 4 5 6 7 8 IB = 0 9 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain 10 VCE(sat)[V],SATURATION VOLTAGE Ic=5IB 25 C O 10 1 VBE[V],SATURATION VOLTAGE Ic=5IB Ta=125 C -25 C 0.1 O O 1 -25 C 25 C Ta=125 C O O O 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1000 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG 1 tSTG, tF [ns], TIME tSTG, tF [μs], TIME 100 tF 0.1 tF 0.01 0.1 1 10 10 0.1 VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time Figure 6. Inductive Load Switching Time © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 3 FJP5304D — NPN Silicon Transistor Typical Characteristics (Continued) 100 TC=25 C o 100 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1μs 10μs 1 1ms DC 0.1 1 0.1 0.01 10 100 1000 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Forward Bias Safe Operating Area Figure 2. Reverse Bias Safe Operating Area 100 PC[W], POWER DISSIPATION 80 60 40 20 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 3. Power Derating © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 4 FJP5304D — NPN Silicon Transistor Mechanical Dimensions TO220 © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 5 FJP5304D FJP5304D NPN Silicon Transistor © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A www.fairchildsemi.com 6