FJPF6806D

FJPF6806D FJPF6806D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color TV 1 TO-220F 2.Collector 3.Emitter 1.Base Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature 50Ω typ. E Rating 1500 750 6 6 12 40 150 -55 ~ 150 Units V V V A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A IF = 4.5A VCC=200V, IC=4A, RL=50Ω IB1=1.0A, IB2= - 2.0A 40 6 8 4 7 5 1.5 2 3 0.2 V V V µs µs Min Typ Max 1 10 200 Units mA µA mA V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 3.1 Units °C/W ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJPF6806D Typical Characteristics 8 100 VCE = 5V 7 IC [A], COLLECTOR CURRENT IB = 2.0A HFE, DC CURRENT GAIN 6 Ta = 125 C o 5 IB = 0.8A 4 IB = 0.6A IB = 0.4A IB = 0.2A 10 3 Ta = 25 C Ta = - 25 C o o 2 1 0 0 2 4 6 8 10 1 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB Ta = 125 C o IC = 3 IB Ta = 125 C o Ta = 25 C 1 o 1 Ta = 25 C Ta = - 25 C 0.1 o o Ta = - 25 C 0.1 o 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 10 VCE = 5 V 8 tSTG & tF [µ s], SWITCHING TIME IC [A], COLLECTOR CURRENT tSTG 1 6 4 Ta = 25 C o 2 Ta = 125 C Ta = - 25 C o o tF VCC = 200V, IC = 4A, IB1 = 1A 0.1 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VBE [V], BASE-EMITTER ON VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJPF6806D Typical Characteristics (Continued) 10 tSTG & tF [µs], SWITCHING TIME tSTG tSTG & tF [µ s], SWITCHING TIME VCC = 200V, IC = 4A, IB2 = - 2A tSTG 1 1 tF tF VCC = 200V, IB1 = 1A,IB2 = - 2A 0.1 1 10 0.1 1 IB1 [A], FORWARD BASE CURRENT IC [A], COLLECTOR CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 15 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT 12 RB2 = 0, IB1 = 15A VCC = 30V, L = 200µ H IC (Pulse) 10 t = 100ms t = 10ms IC (DC) t = 1ms 9 1 6 V BE(off) = -3V 3 0.1 TC = 25 C Single Pulse 0.01 1 10 100 1000 10000 o 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLECTOR-EMITTER VOLTAGE Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area 80 70 PD [W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 o 75 100 125 150 175 200 TC [ C], CASE TEMPERATURE Figure 11. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 FJPF6806D Package Demensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet series™ FAST® DISCLAIMER FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ VCX™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H7