FNA40860B2

FNA40860/B2 Smart Power Module October 2010 FNA40860/B2 Smart Power Module Features • 600V-8A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Easy PCB layout due to built-in bootstrap diode and VS output • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power supply due to built-in HVIC • Built-in thermistor for over-temperature monitoring • Isolation rating of 2000Vrms/min. Motion-SPM General Description TM Applications • AC 100V ~ 253V three-phase inverter drive for small power ac motor drives • Home appliances applications like air conditioner and refrigerator It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and refrigerator. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out protection, short-circuit protection, and temperature monitoring. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. Additional Information For further infomation, please see AN-9070 and FEB305-001 in http://www.fairchildsemi.com Figure 1. ©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FNA40860/B2 Rev. C FNA40860/B2 Smart Power Module Integrated Power Functions • 600V-8A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection • For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to UV (Low-side supply) and SC faults • Input interface: 3.3/5V CMOS compatible, Schmitt trigger input Pin Configuration Top View VB(U) (26) V TH(1) R TH(2) VS(U)(25) VB(V)(24) V S(V)(23) P(3) V B(W)(22) VS(W)(21) U(4) Case Temperature (TC) Detecting Point V(5) IN (UH) (20) IN(VH)(19) IN(WH)(18) VCC(H) (17) VCC(L)(16) COM(15) IN (UL)(14) N U(7) N V(8) NW(9) IN (VL)(13) IN (WL) (12) VFO (11) CSC(10) W(6) Figure 2. FNA40860/B2 Rev. C 2 www.fairchildsemi.com FNA40860/B2 Smart Power Module Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Pin Name V TH RTH P U V W NU NV NW CSC VFO IN(WL) IN (VL) IN(UL) COM VCC(L) V CC(H) IN(WH) IN (VH) IN(UH) VS(W) VB(W) V S(V) V B(V) VS(U) VB(U) Thermistor Bias Voltage Pin Description Series Resistor for the Use of Thermistor (Temperature Detection) Positive DC–Link Input Output for U Phase Output for V Phase Output for W Phase Negative DC–Link Input for U Phase Negative DC–Link Input for V Phase Negative DC–Link Input for W Phase Capacitor (Low-pass Filter) for Short-Current Detection Input Fault Output Signal Input for Low-side W Phase Signal Input for Low-side V Phase Signal Input for Low-side U Phase Common Supply Ground Low-Side Common Bias Voltage for IC and IGBTs Driving High-Side Common Bias Voltage for IC and IGBTs Driving Signal Input for High-side W Phase Signal Input for High-side V Phase Signal Input for High-side U Phase High-side Bias Voltage Ground for W Phase IGBT Driving High-side Bias Voltage for W Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for U Phase IGBT Driving High-side Bias Voltage for U Phase IGBT Driving FNA40860/B2 Rev. C 3 www.fairchildsemi.com FNA40860/B2 Smart Power Module Internal Equivalent Circuit and Input/Output Pins VTH (1) Thermister RTH (2) P (3) (26) VB(U) (25) VS(U) (24) VB(V) (23) VS(V) (22) VB(W) (21) VS(W) (20) IN(UH) (19) IN(VH) (18) IN(WH) (17) VCC(H) UVB UVS VVB VVS WVB WVS IN(UH) IN(VH) IN(WH) VCC COM OUT(WH) WVS W(6) OUT(UH) UVS U(4) OUT(VH) VVS V (5) (16) VCC(L) (15) COM (14) IN(UL) (13) IN(VL) (12) IN(WL) (11) VFO VCC OUT(UL) COM IN(UL) IN(VL) IN(WL) VFO C(SC) OUT(VL) NV (8) NU (7) (10) CSC OUT(WL) NW (9) Note: 1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. 2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions. 3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. Figure 3. FNA40860/B2 Rev. C 4 www.fairchildsemi.com FNA40860/B2 Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VPN V PN(Surge) VCES ± IC ± ICP PC TJ Note: Unless Otherwise Specified) Parameter Supply Voltage Supply Voltage (Surge) Collector-emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature Conditions Applied between P- NU, NV, NW Applied between P- NU, NV, NW TC = 25°C, TJ ＜ 150°C TC = 25°C, TJ ＜ 150°C, Under 1ms Pulse Width TC = 25°C per One Chip (Note 1) Rating 450 500 600 8 16 32 -40 ~ 150 Units V V V A A W °C 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C. Control Part Symbol VCC VBS VIN VFO IFO VSC Parameter Control Supply Voltage High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage Conditions Applied between V CC(H), VCC(L) - COM Applied between V B(U) - VS(U), VB(V) - VS(V), VB(W) - V S(W) Rating 20 20 Units V V V V mA V Applied between IN(UH), IN(VH), IN(WH), -0.3~VCC +0.3 IN(UL), IN(VL), IN(WL) - COM Applied between V FO - COM Sink Current at V FO Pin Applied between C SC - COM -0.3~VCC +0.3 1 -0.3~VCC +0.3 Bootstrap Diode Part Symbol VRRM IF IFP TJ Parameter Maximum Repetitive Reverse Voltage Forward Current Forward Current (Peak) Operating Junction Temperature TC = 25°C Conditions Rating 600 0.5 1 -40 ~ 150 Units V A A °C TC = 25°C, Under 1ms Pulse Width Total System Symbol VPN(PROT) TSTG V ISO Parameter Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Storage Temperature Isolation Voltage Conditions VCC = VBS = 13.5 ~ 16.5V TJ = 150°C, Non-repetitive, less than 2m s 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate Rating 400 -40 ~ 125 2000 Units V °C Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Parameter Junction to Case Thermal Resistance Conditions Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module) Min. - Typ. Max. Units 3.8 4.8 °C/W °C/W FNA40860/B2 Rev. C 5 www.fairchildsemi.com FNA40860/B2 Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Inverter Part Symbol VCE(SAT) VF HS tON tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Parameter Collector-Emitter Saturation Voltage FWD Forward Voltage Switching Times Conditions VCC = VBS = 15V VIN = 5V VIN = 0V IC = 8A, TJ = 25°C IF = 8A, TJ = 25°C Min. 0.45 - Typ. 1.7 1.7 0.75 0.20 0.80 0.30 0.15 0.75 0.20 0.80 0.30 0.15 - Max. Units 2.2 2.2 1.25 0.45 1.30 0.55 1.25 0.45 1.30 0.55 1 V V ms ms ms ms ms ms ms ms ms ms mA VPN = 300V, V CC = VBS = 15V, IC = 8A TJ = 25°C VIN = 0V « 5V, Inductive Load (Note 3) VPN = 300V, V CC = VBS = 15V, IC = 8A TJ = 25°C VIN = 0V « 5V, Inductive Load (Note 3) 0.45 - Collector-Emitter Leakage Current VCE = VCES - 100% IC 100% IC t rr V CE IC IC V CE V IN t ON 10% IC V IN(ON ) V IN tO FF V IN (OF F) 10% V C E tC(O N) 10% V C E t C(OFF) 10% I C 90% IC (a) turn-on (b) turn-off Figure 4. Switching Time Definition FNA40860/B2 Rev. C 6 www.fairchildsemi.com FNA40860/B2 Smart Power Module Switching Loss (Typical) Inductive Load, VPN=300V, VCC=15V, TJ=25℃ IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec 600 600 Inductive Load, VPN=300V, VCC=15V, TJ=150℃ IGBT Turn-ON, Eon IGBT Turn-OFF, Eoff FRD Turn-OFF, Erec SWITCHING LOSS, ESW [uJ] 400 SWITCHING LOSS, ESW [uJ] 5 6 7 8 9 500 500 400 300 300 200 200 100 100 0 0 1 2 3 4 0 0 1 2 3 4 5 6 7 8 9 COLLECTOR CURRENT, Ic [AMPERES] COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics Control Part Symbol IQCCH IQCCL IPCCH Parameter Quiescent V CC Supply Current Operating VCC Supply Current Conditions VCC(H) = 15V, IN(UH,VH,WH) = 0V VCC(L) = 15V, IN (UL,VL, WL) = 0V V CC(H) - COM V CC(L) - COM Min. - Typ. - Max. Units 0.10 2.65 0.15 mA mA mA VCC(H) = 15V, fPWM = 20kHz, V CC(H) - COM duty=50%, applied to one PWM signal input for High-side VCC(L) = 15V, fPWM = 20kHz, V CC(L) - COM duty=50%, applied to one PWM signal input for Low-side IPCCL - - 3.65 mA IQBS IPBS Quiescent V BS S upply Current Operating VBS Supply Current Fault Output Voltage Short Circuit Trip Level Supply Circuit Under-Voltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermister VBS = 15V, IN(UH, VH, WH) = 0V V B(U) - VS(U), VB(V) V S(V), V B(W) - VS(W) - - 0.30 2.00 mA mA VCC = V BS = 15V, fPWM = 20kHz, V B(U) - VS(U), VB(V) duty=50%, applied to one PWM V S(V), V B(W) - VS(W) signal input for High-side VSC = 0V, V FO Circuit: 4.7kW to 5V Pull-up VSC = 1V, V FO Circuit: 4.7kW to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level Detection Level Reset Level Applied between IN(UH), IN (VH), IN (WH), IN(UL), IN(VL), IN(WL) - COM @TTH =25°C, (Note 5) @TTH =100°C VFOH VFOL VSC(ref) UVCCD UVCCR UV BSD UV BSR tFOD VIN(ON) VIN(OFF) RTH 4.5 0.45 10.5 11.0 10.0 10.5 30 0.8 - 0.5 47 2.9 0.5 0.55 13.0 13.5 12.5 13.0 2.6 - V V V V V V V ms V V kW kW Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application. FNA40860/B2 Rev. C 7 www.fairchildsemi.com FNA40860/B2 Smart Power Module 600 550 500 450 20 16 R-T Curve R-T Curve in 50℃ ~ 125℃ Resistance[kW] 400 350 300 250 200 150 100 50 0 -20 -10 0 10 20 Resistance[kW] 12 8 4 0 50 60 70 80 90 100 110 120 Temperature [℃ ] 30 40 50 60 70 80 90 100 110 120 Temperature TTH[℃ ] Figure. 6. R-T Curve of The Built-in Thermistor Bootstrap Diode Part Symbol VF trr Parameter Forward Voltage Reverse Recovery Time Conditions IF = 0.1A, TC = 25°C IF = 0.1A, TC = 25°C Min. - Typ. 2.5 80 Max. - Units V ns 1.0 0.9 0.8 0.7 0.6 Built in Bootstrap Diode VF-IF Characteristic IF [A] 0.5 0.4 0.3 0.2 0.1 0.0 TC=25℃ 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Note: 6. Built in bootstrap diode includes around 15 Ω resistance characteristic. Figure 7. Built in Bootstrap Diode Characteristic FNA40860/B2 Rev. C 8 www.fairchildsemi.com FNA40860/B2 Smart Power Module Recommended Operating Conditions Symbol V PN VCC VBS dVCC/dt, dVBS/dt tdead fPWM V SEN PWIN(ON) P WIN(OFF) Note: 7. SPM might not make response if input pulse width is less than the recommanded value. Parameter Supply Voltage Control Supply Voltage High-side Bias Voltage Control supply variation Blanking Time for Preventing Arm-short PWM Input Signal Voltage for Current Sensing Minimun Input Pulse Width Conditions Applied between P - NU , NV, N W Applied between V CC(H), VCC(L)-COM Applied between VB(U)-VS(U), V B(V)-VS(V) ,VB(W)-VS(W) Value Min. 13.5 13.0 -1 Typ. 300 15 15 - Max. 400 16.5 18.5 1 20 4 Units V V V V/m s ms kHz V ms For Each Input Signal -40°C ＜ TJ ＜ 150°C Applied between N U, NV, N W - COM (Including surge voltage) (Note 7) 1.5 -4 0.5 0.5 - - 8 7 6 5 Allowable Maximum Output Current fSW=5kHz IOrms [Arms] 4 3 2 1 0 VDC=300V, VCC=VBS=15V TJ ＜ 150℃ , TC ≤ 125℃ M.I.=0.9, P.F.=0.8 Sinusoidal PWM fSW=15kHz 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Case Temperature, TC [℃] Note: 8. The allowable output current value may be different from the actual application. Figure 8. Allowable Maximum Output Current Package Marking and Ordering Information Device Marking FNA40860 FNA40860B2 Device FNA40860 FNA40860B2 Package SPM26-AAA SPM26-AAC Reel Size - Tape Width - Quantity 12 12 FNA40860/B2 Rev. C 9 www.fairchildsemi.com FNA40860/B2 Smart Power Module Mechanical Characteristics and Ratings Parameter Device Flatness Mounting Torque Note Figure 9 Mounting Screw: - M3 Note Figure 10 Weight Recommended 0.7N•m Recommended 7.1kg•cm Conditions Limits Min. 0 0.6 6.2 - Typ. 0.7 7.1 11 Max. +120 0.8 8.1 - Units mm N•m kg•cm g Figure 9. Flatness Measurement Position Pre - Screwing : 1→2 Final Screwing : 2→1 2 1 Note: 9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction. 10. Avoid one side tightening stress. Fig.10 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged. The Pre-Screwing torque is set to 20~30% of maximum torque rating. Figure 10. Mounting Screws Torque Order FNA40860/B2 Rev. C 10 www.fairchildsemi.com FNA40860/B2 Smart Power Module Time Charts of SPMs Protective Function Input Signal Protection Circuit State UVCCR RESET a1 SET RESET a6 Control Supply Voltage UVCCD a2 a3 a4 a7 Output Current Fault Output Signal a5 a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR ). a7 : Normal operation: IGBT ON and carrying current. Figure 11. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State UVBSR RESET b1 SET RESET b5 Control Supply Voltage UVBSD b2 b3 b6 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR ) b6 : Normal operation: IGBT ON and carrying current Figure 12. Under-Voltage Protection (High-side) FNA40860/B2 Rev. C 11 www.fairchildsemi.com FNA40860/B2 Smart Power Module Lower arms control input Protection Circuit state Internal IGBT Gate-Emitter Voltage SET c4 c6 c7 RESET c3 c2 SC c1 Output Current c8 Sensing Voltage of the shunt resistance Fault Output Signal (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Input “L” : IGBT OFF state. c5 SC Reference Voltage CR circuit time constant delay c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c7 : IGBT OFF state Figure 13. Short-Circuit Current Protection (Low-side Operation only) Input/Output Interface Circuit 5V-Line (MCU or Control power) R PF=10kΩ SPM IN(UH) , IN (VH) , IN(W H) IN (UL) , IN (VL) , IN(WL) VFO MCU COM Note: 1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2) The logic input is compatible with standard CMOS outputs. Figure 14. Recommended CPU I/O Interface Circuit FNA40860/B2 Rev. C 12 www.fairchildsemi.com FNA40860/B2 Smart Power Module (26) VB(U) HVIC VB(U) VS(U) IN(UH) VB(V) VS(V) IN(VH) VB(W) VS(W) IN(WH) VCC VS(W) COM OUT(WH) OUT(VH) VS(V) OUT(UH) VS(U) P (3) CBS RS CBSC (25) VS(U) (20) IN(UH) Gating UH U (4) (24) VB(V) CBS RS CBSC (23) VS(V) (19) IN(VH) Gating VH (22) VB(W) V (5) M CDCS VDC CBS CBSC (21) VS(W) (18) IN(WH) M C U RS Gating WH 15V line CPS CPS CPS (17) VCC(H) CSP15 CSPC15 (15) COM W (6) 5V line (16) VCC(L) LVIC VCC OUT(UL) RSU RPF RS CSPC05 CSP05 CPF RS NU (7) (11) VFO Fault CBPF VFO OUT(VL) IN(UL) IN(VL) IN(WL) COM CSC THERMISTOR NV (8) Gating UL Gating VL Gating WL (14) IN(UL) (13) IN(VL) (12) IN(WL) RSV RS RS CSC CPS CPS CPS (10) CSC OUT(WL) NW (9) RSW RF RTH (1) VTH (2) RTH Input Signal for Short-Circuit Protection Temp. Monitoring U-Phase Current V-Phase Current W-Phase Current Note: 1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3) VFO output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1mA. Please refer to Figure14. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. (Recommended RS=100 Ω , CPS=1nF) 6) To prevent errors of the protection function, the wiring around RF and C SC should be as short as possible. 7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2 ms. 8) Each capacitor should be mounted as close to the pins of the SPM as possible. 9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22 mF between the P&GND pins is recommended. 10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W) 12) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and frequency characteristics in CBSC. 13) For the detailed information, please refer to the AN-9070 and FEB305-001. Figure 15. Typical Application Circuit FNA40860/B2 Rev. C 13 www.fairchildsemi.com FNA40860/B2 Smart Power Module Detailed Package Outline Drawings(FNA40860) FNA40860/B2 Rev. C 14 www.fairchildsemi.com FNA40860/B2 Smart Power Module Detailed Package Outline Drawings(FNA40860B2, Long Terminal Type) FNA40860/B2 Rev. C 15 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I38 No Identification Needed Obsolete Full Production Not In Production