FQPF13N50CF

FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET May 2006 FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-220 FDP Series GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 2) (Note 1) (Note 1) (Note 3) Parameter FQP13N50CF 13 8 (Note 1) FQPF13N50CF 500 13* 8* 52* ± 30 530 13 19.5 4.5 Unit V A A A V mJ A mJ V/ns - Pulsed 52 195 1.56 -55 to +150 300 48 0.39 W W/°C °C °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQP13N50CF 0.64 62.5 FQPF13N50CF 2.58 62.5 Unit °C/W °C/W © 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF Rev. A1 FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP13N50CF FQPF13N50CF Device FQP13N50CF FQPF13N50CF Package TO-220 TO-220F TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA, TJ = 25°C ID = 250µA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 6.5A VDS = 40V, ID = 6.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 500 -----2.0 ------ Typ -0.5 -----0.43 15 1580 180 20 25 100 130 100 43 7.5 18.5 ---100 0.35 Max Units --10 100 100 -100 4.0 0.54 -2055 235 25 60 210 270 210 56 --13 52 1.4 160 -V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A A V ns µC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 250V, ID = 13A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 400V, ID = 13A VGS = 10V ------ Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 13A VGS = 0V, IS = 13A dIF/dt =100A/µs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.6mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQP13N50CF / FQPF13N50CF Rev. A1 2 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 150 C -55 C o o 25 C 10 0 o 10 0 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test 10 -1 10 -1 -1 10 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω ], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 1.5 VGS = 10V 10 1 1.0 10 0 VGS = 20V 0.5 ※ Note : TJ = 25℃ 150℃ 25℃ -1 ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 0 5 10 15 20 25 30 35 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 3000 VGS, Gate-Source Voltage [V] 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V 10 VDS = 250V VDS = 400V Ciss Capacitance [pF] 2000 8 1500 Coss 6 1000 Crss 500 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 13A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FQP13N50CF / FQPF13N50CF Rev. A1 3 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 6.5 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area for FQP13N50CF 10 3 Figure 9-2. Maximum Safe Operating Area for FQPF13N50CF Operation in This Area is Limited by R DS(on) 10 3 10 2 Operation in This Area is Limited by R DS(on) 10 µs 1 10 2 ID, Drain Current [A] 10 10 0 1ms 10ms 100ms DC ID, Drain Current [A] 100 µs 10 µs 100 µs 10 1 1ms 10ms 100ms 10 0 DC * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -1 10 -2 10 0 10 1 10 2 10 3 10 -2 VDS, Drain-SourceVoltage[V] 10 0 10 1 10 2 10 3 VDS, Drain-SourceVoltage[V] Figure 10. Maximum Drain Current vs. Case Temperature 14 12 ID, Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [℃] FQP13N50CF / FQPF13N50CF Rev. A1 4 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP13N50CF 10 0 D = 0 .5 Zθ JC(t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 ※ N o te s : 1 . Z θ J C (t) = 0 .6 4 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) PDM s in g le p u ls e 10 -2 t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF13N50CF Zθ JC(t), Thermal Response 10 0 D = 0 .5 0 .2 0 .1 0 .0 5 ※ N o te s : 1 . Z θ J C (t) = 2 .5 8 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 10 -1 0 .0 2 0 .0 1 PDM t1 s in g le p u ls e t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQP13N50CF / FQPF13N50CF Rev. A1 5 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP13N50CF / FQPF13N50CF Rev. A1 6 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP13N50CF / FQPF13N50CF Rev. A1 7 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters FQP13N50CF / FQPF13N50CF Rev. A1 8 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters FQP13N50CF / FQPF13N50CF Rev. A1 9 15.87 ±0.20 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 10 FQP13N50CF / FQPF13N50CF Rev. A1 www.fairchildsemi.com