FSAB20PH60

FSAB20PH60 Smart Power Module for Partial Switching Converter September 2006 FSAB20PH60 Smart Power Module for Partial Switching Converter Features • Very low thermal resistance due to using DBC • 600V-20A single-phase rectifier bridge diode including two IGBTs for partial switching converter • Integrated IC for gate driving and protection • Divided negative dc-link terminals for current sensing • Isolation rating of 2500Vrms/min. General Description FSAB20PH60 is an advanced smart power module of PSC(Partial Switching Converter) that Fairchild has newly developed and designed mainly targeting low-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection function. Applications • AC 187V ~ 276V single-phase partial-switching converter of air-conditioner Top View 44mm Bottom View 26.8mm 26.8mm Figure 1. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Integrated Power Functions • 600V-20A rectifiers for single-phase ac input with IGBT switches for operation of partial switching converter Integrated Drive, Protection and System Control Functions • For IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply) • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input • Built-in thermistor: Over-temperature monitoring Pin Configuration Top View (1) VCC (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH (21) ND (22) NR (23) NS (24) NC Case Temperature (TC) Detecting Point (25) R (26) S DBC Substrate (27) PR Figure 2. 2 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin Name VCC COM NC IN(R) IN(S) VFO CFOD CSC NC NC NC NC NC NC NC NC NC NC R(TH) V(TH) ND NR NS NC R S PR Common Bias Voltage for IC Common Supply Ground Dummy Pin Signal Input for R-phase IGBT Signal Input for S-phase IGBT Fault Output Pin Description Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-Current Detection Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Series Resistor for the Use of Thermistor (Temperature Detection) Thermistor Bias Voltage Negative DC–Link of Rectifier Diode Negative DC–Link of R-phase IGBT Negative DC–Link of S-phase IGBT Dummy Pin AC Input for R Phase AC Input for S Phase Positive DC–Link Output Internal Equivalent Circuit and Input/Output Pins (20) VTH (19) RTH (8) CSC (7) CFOD (6) VFO (5) IN(S) (4) IN(R) (2) COM (1) VCC NTC Thermistor D1 D2 (27) PR (26) S (25) R CSC CFOD VFO IN(S) IN(R) COM VCC OUT(R) OUT(S) Q1 D3 Q2 D4 (21) ND (23) NS (22) NR Note: The low-side is composed of two IGBTs including rectifying diodes for each IGBT and one control IC which has gate driving, current sensing and protection functions. The highside is composed of two rectifying diodes without gate driving IC. Figure 3. 3 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Absolute Maximum Ratings (TJ = 25°C, Converter Part Symbol Vi Vi(Surge) VPN VPN(surge) VCES VRRM Ii Ii TJ Note: Unless Otherwise Specified) Parameter Input Supply Voltage Input Supply Voltage (Surge) Output Voltage Output Voltage (Surge) Collector-emitter Voltage Repetitive Peak Reverse Voltage Input Current (100% Load) Input Current (130% Load) Operating Junction Temperature Conditions Applied between R-S Applied between R-S Applied between P-N Applied between P-N IGBT Diode TC ≤ 90°C, VO = 280V, fPWM = 60Hz TC ≤ 90°C, VO = 280V, fPWM = 60Hz (Note 1) Rating 276 500 400 500 600 600 11 14 -20 ~ 125 Units V V V V V V ARMS ARMS °C 1. The maximum junction temperature rating of the power chips integrated within the module is 150 °C(@TC ≤ 100°C). However, to insure safe operation, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Symbol VCC VIN VFO IFO VSC Parameter Control Supply Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Conditions Applied between VCC - COM Applied between IN(R), IN(S) - COM Applied between VFO - COM Sink Current at VFO Pin Rating 20 -0.3~VCC+0.3 -0.3~VCC+0.3 5 -0.3~VCC+0.3 Units V V V mA V Current Sensing Input Voltage Applied between CSC - COM Total System Symbol TC TSTG VISO Parameter Module Case Operation Temperature Storage Temperature Isolation Voltage Conditions -20°C < TJ < 125°C, See Fig.2 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC Rating -20 ~ 100 -40 ~ 125 2500 Units °C °C Vrms 4 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Absolute Maximum Ratings Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Parameter Junction to Case Thermal Resistance Conditions Each IGBT under Operating Condition Each Diode under Operating Condition Min. - Typ. - Max. 2.8 2.6 Units °C/W °C/W Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Main Circuit Part Symbol VCE(SAT) VFM tON tC(ON) tOFF tC(OFF) trr ICES IR Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Item Collector-Emitter Saturation Voltage Diode Forward Voltage Switching Times Conditions VCC = VBS =15V VIN = 5V VIN = 0V IC = 6.5A, TJ = 25°C IC = 20A, TJ = 25°C Min. - Typ. 2.1 1.1 0.48 0.85 0.56 0.10 1.35 - Max. 2.6 1.5 250 250 Units V V µs µs µs µs µs µA µA VPN = 300V, VCC = VBS = 15V IC = 6.5A VIN = 0V ↔ 5V, Inductive Load (Note 3) Collector - Emitter Leakage Current Diode Leakage Current VCE = VCES VR = VRRM - 100% IC 120% IC trr V CE IC IC V CE V IN tON tC(ON) V IN(ON) 10% IC 90% IC 10% V CE V IN tOFF V IN(OFF) 10% V CE tC(OFF) 10% IC Figure 4. Switching Time Definition 5 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Symbol IQCCL VFOH VFOL VSC(ref) UVCCD UVCCR tFOD VIN(ON) VIN(OFF) RTH Short Circuit Trip Level Supply Circuit UnderVoltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermistor @ TC = 25°C (Note Fig. 10) @ TC = 80°C (Note Fig. 10) Note: Parameter Quiescent VCC Supply Current Fault Output Voltage VCC = 15V IN(L) = 0V Conditions VCC(L) - COM Min. 4.5 0.45 10.7 11.2 1.0 3.0 - Typ. 0.5 11.9 12.4 1.8 50 5.76 Max. 23 0.8 0.55 13.0 13.2 0.8 - Units mA V V V V V ms V V kΩ kΩ VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level CFOD = 33nF (Note 5) Applied between IN(R), IN(S) - COM 4. Over current protection is functioning only for the low-side IGBT. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol Vi VPN VCC fPWM Note: Parameter Input Supply Voltage Output Voltage Control Supply Voltage PWM Input Signal Condition Applied between R - S Applied between P - N Applied between VCC - COM TC ≤ 100°C, TJ ≤ 125°C, Per IGBT (Note 6) Value Min. 187 13.5 - Typ. 280 15 60 Max. 276 400 16.5 - Units Vrms V V Hz 6. Regarding the switching method of FSAB20PH60, it follows the control method of the typical partial-switching power factor correction circuit as shown in Figure 5. 6 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter D1 Lac D2 L o a d (a) Vac IS Cdc Input Signal 1.5 Q , D 2 3 1 ON 0.5 0 D 2 , D3 ON 2 4 6 8 10 Q1 , D 4 ON D 1 , D4 ON 12 14 16 18 20 Q1 D3 Q2 D4 Rsh -0.5 0 20 10 IS (A) 0 -10 -20 0 20 10 IQ(A) 0 Input Current (b) L o a d 2 4 6 8 10 12 14 Q1 ON 16 18 20 IGBT Current -10 -20 0 20 L o a d Q2 ON 2 4 6 8 10 12 14 16 18 20 10 ID(A) 0 -10 -20 0 Diode Current D 1 ,D 4 ON D2 , D 3 ON 2 4 6 8 10 12 Time(ms) 14 16 18 20 (c) Note: Depending on the polarity of input voltage Vac, Q1 or Q2 is turned on at the zero crossing point of input voltage, and turned off considering the output power and distortion of input current. Each IGBT turns on with zero current with the utility frequency, 50 or 60Hz. Figure 5. PWM Example of FSAB20PH60 7 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Mechanical Characteristics and Ratings Parameter Mounting Torque Heatsink Flatness Weight Mounting Screw: M3 Conditions Recommended 0.62Nm Note Fig. 6 Limits Min. 0.51 0 - Typ. 0.62 15.00 Max. 0.72 120 - Units N•m um g (+) (+) (+) Figure 6. Flatness Measurement Position 8 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Time Charts of SPMs Protective Function I nput Signal Protection Circuit State UV CCR RESET SET RESET Control Supply Voltage a1 UV CCD a3 a6 a2 a4 a7 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 7. Under-Voltage Protection 9 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Lower arms control input Protection circuit state Internal IGBT Gate-Emitter Voltage c2 c6 c7 SET RESET c3 SC c4 c1 Output Current c8 SC Reference Voltage Sensing Voltage of the shunt resistance Fault Output Signal c5 CR circuit tim e constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Figure 8. Over Current Protection 10 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter 5V-Line 4.7kΩ IN(R) PSC Module CPU IN(S) 100 Ω 1nF 1nF COM VFO Note: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 3.3kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs. Figure 9. Recommended CPU I/O Interface Circuit R-T Graph 120 100 Resistance [kΩ] 80 60 40 20 0 20 30 40 50 60 70 80 90 100 110 120 130 Temperature [°C] Figure 10. R-T Curve of the Built-in Thermistor 11 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Vac LAC +5V PSC Module, FSAB20PH60 VTH NTC Thermistor D1 D2 Temperature RTH RTH 0.1µF +5V 4.7kΩ 100Ω CSC CFOD VFO 1nF CFOD IN(S) IN(R) COM PR S R Microcontroller or DSP CSC CFOD VFO IN(S) IN(R) COM OUT(R) OUT(S) Q1 D3 Q2 D4 Fault 1nF Gate S Gate R Inverter ND NR NS RSH Current 100µF VCC VCC 1µ F CSC RF Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 9. 3. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 6 for calculation method. 4. Input signal is High-Active type. There is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off/turn-on threshold voltage. 5. To prevent errors of the protection function, the wiring around RSC, RF and CSC should be as short as possible. 6. In the over current protection circuit, please select the RFCSC time constant in the range 3~4 µs. 7. Each capacitors should be mounted as close to the pins as possible. 8. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 9. Internal NTC thermistor can be used for monitoring the case temperature and protecting the device from the overheating operation. Please select an appropriate resistor RTH according to the application. For example, use RTH=4.7kΩ that will make the voltage across RTH to be 2.5V at 85°C of the case temperature. 10. This PSC module is not designed for the internal IGBT to be turned on when the current is flowing through the input reactor LAC. Otherwise, there will be large reverse recovery current that makes considerably large turn-on switching loss of IGBT, which may destroy the internal IGBTs. 11. Please use an appropriate shunt resistor RSH to protect the intenal IGBT from the overcurrent operation. For example, if the IGBT current has to be protected below 25A, then use 20mΩ resistor of RSH. When selecting protecting current level, please consider the variation and tolerance of external components. Moreover, the shunt resistor path from NR and NS to ND and ground that is connected to COM of the internal drive IC, should be thick and short in order to minimize the stray inductance that may generate improper switching of the module. Figure 11. Application Circuit 12 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Detailed Package Outline Drawings 13 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Detailed Package Outline Drawings (Continued) 14 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Detailed Package Outline Drawings (Continued) 15 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design First Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 16 www.fairchildsemi.com FSAB20PH60 Rev. A