FSBB20CH60F

FSBB20CH60F Smart Power Module April 12, 2006 FSBB20CH60F Smart Power Module Features • UL Certified No.E209204(SPM27-CA package) • Very low thermal resistance due to using DBC • 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power supply due to built-in HVIC • Isolation rating of 2500Vrms/min. SPM General Description TM Applications • AC 100V ~ 253V three-phase inverter drive for small power ac motor drives • Home appliances applications like air conditioner and washing machine. It is an advanced smart power module (SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting lowpower inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection. The high speed built-in HVIC provides optocoupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. Top View 44mm Bottom View 26.8mm Figure 1. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSBB20CH60F Rev. D FSBB20CH60F Smart Power Module Integrated Power Functions • 600V-20A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 10 and 11. • For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply) • Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Top View 13.7 (1) VCC(L) (2) COM (3) IN(UL) (4) IN(VL) (5) IN(WL) (6) VFO (7) CFOD (8) CSC (9) IN(UH) (10) VCC(UH) (11) VB(U) (12) VS(U) (13) IN(VH) (14) VCC(VH) (15) VB(V) (16) VS(V) (17) IN(WH) (18) VCC(WH) (19) VB(W) (20) VS(W) (21) NU (22) NV 19.2 (23) NW (24) U Case Temperature (T ) C Detecting Point (25) V (26) W DBC Substrate (27) P Figure 2. 2 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin Name VCC(L) COM IN(UL) IN(VL) IN(WL) VFO CFOD CSC IN(UH) VCC(UH) VB(U) VS(U) IN(VH) VCC(VH) VB(V) VS(V) IN(WH) VCC(WH) VB(W) VS(W) NU NV NW U V W P Common Supply Ground Signal Input for Low-side U Phase Signal Input for Low-side V Phase Signal Input for Low-side W Phase Fault Output Pin Description Low-side Common Bias Voltage for IC and IGBTs Driving Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-Current Detection Input Signal Input for High-side U Phase High-side Bias Voltage for U Phase IC High-side Bias Voltage for U Phase IGBT Driving High-side Bias Voltage Ground for U Phase IGBT Driving Signal Input for High-side V Phase High-side Bias Voltage for V Phase IC High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving Signal Input for High-side W Phase High-side Bias Voltage for W Phase IC High-side Bias Voltage for W Phase IGBT Driving High-side Bias Voltage Ground for W Phase IGBT Driving Negative DC–Link Input for U Phase Negative DC–Link Input for V Phase Negative DC–Link Input for W Phase Output for U Phase Output for V Phase Output for W Phase Positive DC–Link Input 3 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Internal Equivalent Circuit and Input/Output Pins P (27) (19) V B(W ) (18) V CC(W H) VB VCC COM IN VS W (26) OUT (17) IN (W H) (20) V S(W ) (15) V B(V) (14) V CC(VH) VB VCC COM IN VS V (25) OUT (13) IN (VH) (16) V S(V) (11) V B(U) (10) V CC(UH) VB VCC COM IN VS U (24) OUT (9) IN (UH) (12) V S(U) (8) C SC (7) C FO D (6) V FO C(SC) C(FOD) VFO OUT(W L) N W ( 23) (5) IN (W L) (4) IN (VL) (3) IN (UL) (2) CO M IN(W L) OUT(VL) IN(VL) IN(UL) COM OUT(UL) V SL N U ( 21) N V ( 22) (1) V CC(L) VCC Note: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT. Figure 3. 4 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VPN VPN(Surge) VCES ± IC ± ICP PC TJ Note: Unless Otherwise Specified) Parameter Supply Voltage Supply Voltage (Surge) Collector-emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature TC = 25°C Conditions Applied between P- NU, NV, NW Applied between P- NU, NV, NW Rating 450 500 600 20 40 61 -20 ~ 125 Units V V V A A W °C TC = 25°C, Under 1ms Pulse Width TC = 25°C per One Chip (Note 1) 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150 °C(@TC ≤ 100°C). However, to insure safe operation of the SPM, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Symbol VCC VBS VIN VFO IFO VSC Parameter Control Supply Voltage High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Conditions Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) COM Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM Applied between VFO - COM Sink Current at VFO Pin Rating 20 20 -0.3~17 -0.3~VCC+0.3 5 -0.3~VCC+0.3 Units V V V V mA V Current Sensing Input Voltage Applied between CSC - COM Total System Symbol VPN(PROT) TC TSTG VISO Parameter Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Module Case Operation Temperature Storage Temperature Isolation Voltage Conditions VCC = VBS = 13.5 ~ 16.5V TJ = 125°C, Non-repetitive, less than 2µs -20°C≤ TJ ≤ 125°C, See Figure 2 60Hz, Sinusoidal, AC 1 minute, Connection Pins to ceramic substrate Rating 400 -20 ~ 100 -40 ~ 125 2500 Units V °C °C Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Parameter Junction to Case Thermal Resistance Condition Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module) Min. - Typ. Max. Units 1.63 2.55 °C/W °C/W Package Marking and Ordering Information Device Marking FSBB20CH60F Device FSBB20CH60F Package SPM27CA Reel Size - Tape Width - Quantity 10 5 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Inverter Part Symbol VCE(SAT) VF HS tON tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Parameter Collector-Emitter Saturation Voltage FWD Forward Voltage Switching Times Conditions VCC = VBS = 15V VIN = 5V VIN = 0V IC =20A, TJ = 25°C IC = 20A, TJ = 25°C Min. - Typ. 0.48 0.30 0.93 0.52 0.10 0.63 0.30 1.01 0.51 0.10 - Max. 2.3 2.1 250 Units V V µs µs µs µs µs µs µs µs µs µs µA VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) - Collector-Emitter Leakage Current VCE = VCES - 100% I C 100% I C trr V CE IC IC V CE V IN tON tC(ON) V IN(ON) 10% I C 90% I C 10% V CE V IN 0 tOFF tC(OFF) V IN(OFF) 10% V CE 10% I C (a) turn-on (b) turn-off Figure 4. Switching Time Definition 6 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Symbol IQCCL IQCCH IQBS VFOH VFOL VSC(ref) TSD ∆TSD Parameter Quiescent VCC Supply Current Conditions VCC = 15V IN(UL, VL, WL) = 0V VCC = 15V IN(UH, VH, WH) = 0V VCC(L) - COM VCC(UH), VCC(VH), VCC(WH) - COM VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W) Min. 4.5 0.45 125 10.7 11.2 10.1 10.5 1.0 3.0 - Typ. 0.5 145 18 11.9 12.4 11.3 11.7 1.8 - Max. Units 23 100 500 0.8 0.55 175 13.0 13.2 12.5 12.9 0.8 mA µA µA Quiescent VBS Supply Current Fault Output Voltage VBS = 15V IN(UH, VH, WH) = 0V VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VCC = 15V (Note 4) V V V °C °C V V V V ms V V Short Circuit Trip Level Over-temperature protection Temperature at LVIC Over-temperature tion hysterisis Supply Circuit UnderVoltage Protection protec- Temperature at LVIC Detection Level Reset Level Detection Level Reset Level Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage CFOD = 33nF (Note 5) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM UVCCD UVCCR UVBSD UVBSR tFOD VIN(ON) VIN(OFF) Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol VPN VCC VBS dVCC/dt, dVBS/dt tdead fPWM VSEN Parameter Supply Voltage Control Supply Voltage High-side Bias Voltage Control supply variation Conditions Applied between P - NU, NV, NW Applied between VCC(UH), VCC(VH), VCC(WH), VCC(L) - COM Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) Value Min. 13.5 13.0 -1 2.5 -4 Typ. 300 15 15 - Max. 400 16.5 18.5 1 20 4 Units V V V V/µs µs Blanking Time for Preventing For Each Input Signal Arm-short PWM Input Signal Voltage for Current Sensing -20°C ≤ TC ≤ 100°C, -20°C ≤ TJ ≤ 125°C Applied between NU, NV, NW - COM (Including surge voltage) kHz V 7 www.fairchildsemi.com FSBB20CH60F Rev. D FSBB20CH60F Smart Power Module Mechanical Characteristics and Ratings Parameter Mounting Torque Device Flatness Weight Mounting Screw: - M3 Conditions Recommended 0.62N•m Note Figure 5 Limits Min. 0.51 0 - Typ. 0.62 15.00 Max. 0.72 +120 - Units N•m µm g (+) (+) Figure 5. Flatness Measurement Position 8 www.fairchildsemi.com FSBB20CH60F Rev. D FSBB20CH60F Smart Power Module Time Charts of SPMs Protective Function Input Signal Protection Circuit State UVCCR RESET SET RESET Control Supply Voltage a1 UVCCD a2 a4 a3 a6 a7 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 6. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State UVBSR RESET SET RESET Control Supply Voltage b1 UVBSD b2 b3 b5 b6 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR) b6 : Normal operation: IGBT ON and carrying current Figure 7. Under-Voltage Protection (High-side) 9 www.fairchildsemi.com FSBB20CH60F Rev. D FSBB20CH60F Smart Power Module Lower arms control input Protection circuit state Internal IGBT Gate-Emitter Voltage c2 c6 c7 SET c4 c3 RESET SC c1 Output Current c8 Sensing Voltage of the shunt resistance Fault Output Signal c5 SC Reference Voltage CR circuit time constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Figure 8. Short-Circuit Current Protection (Low-side Operation only) 10 www.fairchildsemi.com FSBB20CH60F Rev. D FSBB20CH60F Smart Power Module 5V-Line R PF = 4.7k Ω SPM IN (UH) , IN (VH) , IN(W H) CPU 100 Ω C PF = 1nF 1nF IN (UL) , IN (VL) , IN (W L) VFO CO M Note: 1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 3.3kΩ(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input is compatible with standard CMOS or LSTTL outputs. Figure 9. Recommended CPU I/O Interface Circuit These Values depend on PWM Control Algorithm 15V-Line RE(H) RBS DBS One-Leg Diagram of SPM P Vcc VB HO 22uF 0.1uF IN COM VS Vcc Inverter Output OUT 1000u F 1uF IN COM VSL N Note: 1. It would be recommended that the bootstrap diode, DBS, has soft and fast recovery characteristics. 2. The bootstrap resistor (RBS) should be 3 times greater than RE(H). The recommended value of RE(H) is 5.6Ω, but it can be increased up to 20Ω (maximum) for a slower dv/dt of high-side. 3. The ceramic capacitor placed between VCC-COM should be over 1µF and mounted as close to the pins of the SPM as possible. Figure 10. Recommended Bootstrap Operation Circuit and Parameters 11 www.fairchildsemi.com FSBB20CH60F Rev. D FSBB20CH60F Smart Power Module RE(WH) RE(VH) 15V line RE(UH) RBS DBS P (27) (19) VB(W) (18) VCC(WH) VB VCC COM IN OUT VS W (26) Gating WH RBS CBS CBSC (17) IN(WH) (20) VS(W) DBS (15) VB(V) (14) VCC(VH) VB VCC COM IN OUT VS V (25) Gating VH CBS CBSC (13) IN(VH) (16) VS(V) M CDCS Vdc C P U RBS DBS (11) VB(U) (10) VCC(UH) VB VCC COM IN OUT VS U (24) Gating UH RF 5V line CBS CBSC (9) IN(UH) (12) VS(U) CSC RS Fault RPF CFOD (8) CSC (7) CFOD (6) VFO C(SC) OUT(WL) C(FOD) VFO IN(WL) OUT(VL) IN(VL) IN(UL) COM OUT(UL) VSL NU (21) NV (22) NW (23) RSW Gating WL Gating VL Gating UL CBPF CPF (5) IN(WL) (4) IN(VL) (3) IN(UL) (2) COM (1) VCC(L) RSV VCC RSU CSP15 CSPC15 Input Signal for ShortCircuit Protection W-Phase Current V-Phase Current U-Phase Current CFW CFV CFU RFW RFV RFU Note: 1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2. By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 9. 4. CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 5 for calculation method. 6. Input signal is High-Active type. There is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple that input signal agree with turn-off/turn-on threshold voltage. 7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2 µs. 9. Each capacitor should be mounted as close to the pins of the SPM as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22 µF between the P&GND pins is recommended. 11. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12. CSPC15 should be over 1uF and mounted as close to the pins of the SPM as possible. Figure 11. Typical Application Circuit 12 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Detailed Package Outline Drawings 13 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Detailed Package Outline Drawings (Continued) 14 FSBB20CH60F Rev. D www.fairchildsemi.com FSBB20CH60F Smart Power Module Detailed Package Outline Drawings (Continued) 15 FSBB20CH60F Rev. D www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ I2C™ EcoSPARK™ i-Lo™ E2CMOS™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production