FSBB20CH60C

FSBB20CH60CL Smart Power Module August 2009 FSBB20CH60CL Smart Power Module Features • UL Certified No.E209204(SPM27-CB package) • Very low thermal resistance due to using DBC • Easy PCB layout due to built in bootstrap diode • 600V-20A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power supply due to built-in HVIC • Isolation rating of 2500Vrms/min. Motion-SPM General Description TM It is an advanced motion-smart power module (Motion-SPMTM) that Fairchild has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting low-power inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and short-circuit protection. The high speed built-in HVIC provides opto-coupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals. Applications • AC 100V ~ 253V three-phase inverter drive for small power ac motor drives • Home appliances applications like air conditioner and washing machine Top View Bottom View 44mm 26.8mm Figure 1. ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module Integrated Power Functions • 600V-20A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figures 12 and 13. • For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to UV (Low-side supply) and SC faults • Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Top View Figure 2. 2 FSBB20CH60CL Rev. D www.fairchildsemi.com FSBB20CH60CL Smart Power Module Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin Name VCC(L) COM IN(UL) IN(VL) IN(WL) VFO CFOD CSC IN(UH) VCC(H) VB(U) VS(U) IN(VH) VCC(H) VB(V) VS(V) IN(WH) VCC(H) VB(W) VS(W) NU NV NW U V W P Common Supply Ground Signal Input for Low-side U Phase Signal Input for Low-side V Phase Signal Input for Low-side W Phase Fault Output Pin Description Low-side Common Bias Voltage for IC and IGBTs Driving Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-Current Detection Input Signal Input for High-side U Phase High-side Common Bias Voltage for IC and IGBTs Driving High-side Bias Voltage for U Phase IGBT Driving High-side Bias Voltage Ground for U Phase IGBT Driving Signal Input for High-side V Phase High-side Common Bias Voltage for IC and IGBTs Driving High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving Signal Input for High-side W Phase High-side Common Bias Voltage for IC and IGBTs Driving High-side Bias Voltage for W Phase IGBT Driving High-side Bias Voltage Ground for W Phase IGBT Driving Negative DC–Link Input for U Phase Negative DC–Link Input for V Phase Negative DC–Link Input for W Phase Output for U Phase Output for V Phase Output for W Phase Positive DC–Link Input 3 FSBB20CH60CL Rev. D www.fairchildsemi.com FSBB20CH60CL Smart Power Module Internal Equivalent Circuit and Input/Output Pins P (27) (19) VB(W) (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (14) VCC(H) (13) IN(VH) (16) VS(V) (11) VB(U) (10) VCC(H) (9) IN(UH) (12) VS(U) VB VCC COM IN OUT VS W (26) VB VCC COM IN OUT VS V (25) VB VCC COM IN OUT VS U (24) (8) CSC (7) CFOD (6) VFO C(SC) OUT(WL) C(FOD) VFO IN(WL) OUT(VL) IN(VL) IN(UL) COM OUT(UL) VSL NU (21) NV (22) NW (23) (5) IN(WL) (4) IN(VL) (3) IN(UL) (2) COM (1) VCC(L) VCC Note: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT. Figure 3. 4 FSBB20CH60CL Rev. D www.fairchildsemi.com FSBB20CH60CL Smart Power Module Absolute Maximum Ratings (TJ = 25°C, Inverter Part Symbol VPN VPN(Surge) VCES ± IC ± ICP PC TJ Note: Unless Otherwise Specified) Parameter Supply Voltage Supply Voltage (Surge) Collector-emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature TC = 25°C Conditions Applied between P- NU, NV, NW Applied between P- NU, NV, NW Rating 450 500 600 20 40 62 -40 ~ 150 Units V V V A A W °C TC = 25°C, Under 1ms Pulse Width TC = 25°C per One Chip (Note 1) 1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@TC ≤ 125°C). Control Part Symbol VCC VBS VIN VFO IFO VSC Parameter Control Supply Voltage High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage Conditions Applied between VCC(H), VCC(L) - COM Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM Applied between VFO - COM Sink Current at VFO Pin Applied between CSC - COM Rating 20 20 -0.3~17 -0.3~VCC+0.3 5 -0.3~VCC+0.3 Units V V V V mA V Bootstrap Diode Part Symbol VRRM IF IFP TJ Parameter Maximum Repetitive Reverse Voltage Forward Current Forward Current (Peak) Operating Junction Temperature TC = 25°C Conditions Rating 600 0.5 2 -40 ~ 150 Units V A A °C TC = 25°C, Under 1ms Pulse Width Total System Symbol VPN(PROT) TC TSTG VISO Parameter Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Module Case Operation Temperature Storage Temperature Isolation Voltage Conditions VCC = VBS = 13.5 ~ 16.5V TJ = 150°C, Non-repetitive, less than 2μs -40°C≤ TJ ≤ 150°C, See Figure 2 60Hz, Sinusoidal, AC 1 minute, Connection Pins to heat sink plate Rating 400 -40 ~ 125 -40 ~ 150 2500 Units V °C °C Vrms Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Parameter Junction to Case Thermal Resistance Conditions Inverter IGBT part (per 1/6 module) Inverter FWD part (per 1/6 module) Min. - Typ. Max. Units 2.0 3.0 °C/W °C/W 5 FSBB20CH60CL Rev. D www.fairchildsemi.com FSBB20CH60CL Smart Power Module Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Inverter Part Symbol VCE(SAT) VF HS tON tC(ON) tOFF tC(OFF) trr LS tON tC(ON) tOFF tC(OFF) trr ICES Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Parameter Collector-Emitter Saturation Voltage FWD Forward Voltage Switching Times Conditions VCC = VBS = 15V VIN = 5V VIN = 0V IC = 20A, TJ = 25°C IF = 20A, TJ = 25°C Min. - Typ. 0.75 0.2 0.45 0.15 0.1 0.5 0.3 0.45 0.15 0.1 - Max. 2.0 2.2 1 Units V V μs μs μs μs μs μs μs μs μs μs mA VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) - Collector-Emitter Leakage Current VCE = VCES - Control Part Symbol IQCCL IQCCH IQBS VFOH VFOL VSC(ref) UVCCD UVCCR UVBSD UVBSR tFOD VIN(ON) VIN(OFF) Note: 4. Short-circuit current protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Parameter Quiescent VCC Supply Current Conditions VCC = 15V IN(UL, VL, WL) = 0V VCC = 15V IN(UH, VH, WH) = 0V VCC(L) - COM VCC(H) - COM VB(U) - VS(U), VB(V) -VS(V), VB(W) - VS(W) Min. 4.5 0.45 10.7 11.2 10 10.5 1.0 2.8 - Typ. 0.5 11.9 12.4 11 11.5 1.8 - Max. 23 600 500 0.8 0.55 13.0 13.4 12 12.5 0.8 Units mA μA μA V V V V V V V ms V V Quiescent VBS Supply Current Fault Output Voltage VBS = 15V IN(UH, VH, WH) = 0V VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level Detection Level Reset Level Short Circuit Trip Level Supply Circuit UnderVoltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage CFOD = 33nF (Note 5) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM 6 FSBB20CH60CL Rev. D www.fairchildsemi.com FSBB20CH60CL Smart Power Module 100% I C 100% I C trr V CE IC IC V CE V IN tON tC(ON) V IN(ON) 10% IC 90% I C 10% V CE V IN 0 tOFF tC(OFF) V IN(OFF) 10% V CE 10% I C (a) turn-on (b) turn-off Figure 4. Switching Time Definition Switching Loss (Typical) SWITCHING LOSS(ON) VS. COLLECTOR CURRENT 1100 SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT 700 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 22 SWITCHING LOSS, ESW(OFF) [uJ] SWITCHING LOSS, ESW(ON) [uJ] VCE=300V 1000 V =15V CC 900 VIN=5V TJ=25℃ 800 TJ=150℃ VCE=300V VCC=15V 600 VIN=5V TJ=25℃ 500 TJ=150℃ 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 20 22 COLLECTOR CURRENT, Ic [AMPERES] COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics 7 FSBB20CH60CL Rev. D www.fairchildsemi.com FSBB20CH60CL Smart Power Module Bootstrap Diode Part Symbol VF trr Parameter Forward Voltage Reverse Recovery Time Conditions IF = 0.1A, TC = 25°C IF = 0.1A, TC = 25°C Min. - Typ. 2.5 80 Max. - Units V ns 1.0 0.9 0.8 0.7 0.6 Built in Bootstrap Diode VF-IF Characteristic IF [A] 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 TC=25℃ 13 14 15 VF [V] Note: 6. Built in bootstrap diode includes around 15Ω resistance characteristic. Figure 6. Built in Bootstrap Diode Characteristics Recommended Operating Conditions Symbol VPN VCC VBS dVCC/dt, dVBS/dt tdead fPWM VSEN Parameter Supply Voltage Control Supply Voltage High-side Bias Voltage Control supply variation Conditions Applied between P - NU, NV, NW Applied between VCC(H), VCC(L)- COM Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) Value Min. 13.5 13.0 -1 2.0 -4 Typ. 300 15 15 - Max. 400 16.5 18.5 1 20 4 Units V V V V/μs μs Blanking Time for Preventing For Each Input Signal Arm-short PWM Input Signal Voltage for Current Sensing -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C Applied between NU, NV, NW - COM (Including surge voltage) kHz V 8 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module Mechanical Characteristics and Ratings Parameter Mounting Torque Device Flatness Weight Mounting Screw: - M3 Conditions Recommended 0.62N•m Note Figure 5 Limits Min. 0.51 0 - Typ. 0.62 15.00 Max. 0.80 +120 - Units N•m μm g (+) (+) Figure 7. Flatness Measurement Position Package Marking and Ordering Information Device Marking FSBB20CH60C Device FSBB20CH60C Package SPM27-CC Reel Size - Tape Width - Quantity 10 9 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module Time Charts of SPMs Protective Function Input Signal Protection Circuit State UVCCR RESET SET RESET Control Supply Voltage a1 UVCCD a2 a4 a3 a6 a7 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 8. Under-Voltage Protection (Low-side) Input Signal Protection Circuit State UVBSR RESET SET RESET Control Supply Voltage b1 UVBSD b2 b3 b5 b6 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under voltage reset (UVBSR) b6 : Normal operation: IGBT ON and carrying current Figure 9. Under-Voltage Protection (High-side) 10 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module Lower arms control input Protection circuit state Internal IGBT Gate-Emitter Voltage c2 c6 c7 SET c4 c3 RESET SC c1 Output Current c8 Sensing Voltage of the shunt resistance Fault Output Signal c5 SC Reference Voltage CR circuit time constant delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input “L” : IGBT OFF state. c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON. c8 : IGBT OFF state Figure 10. Short-Circuit Current Protection (Low-side Operation only) 11 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module 5V-Line RPF=4.7㏀ 100Ω SPM IN(UH) , IN(VH) , IN(WH) CPU 100Ω 100Ω 1nF 1nF 1nF IN (UL) , IN (VL) , IN(WL) VFO CPF= 1nF COM Note: 1) RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The SPM input signal section integrates 5kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2) The logic input is compatible with standard CMOS or LSTTL outputs. Figure 11. Recommended CPU I/O Interface Circuit These Values depend on PWM Control Algorithm One-Leg Diagram of SPM P Vcc VB HO 15V-Line 22uF 0.1uF IN COM VS Vcc Inverter Output OUT 1000uF 1uF IN COM VSL N Note: 1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible. Figure 12. Recommended Bootstrap Operation Circuit and Parameters 12 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module 5V line 15V line (19) V B(W ) (18) V CC(H) P (27) VB VCC COM IN OUT VS W (26) RS Gating W H C PS C BS C BSC (17) IN (W H) (20) V S(W ) (15) V B(V) (14) V CC(H) VB VCC COM IN OUT VS V (25) RS Gating VH C PS C BS C BSC (13) IN (VH) (16) V S(V) (11) V B(U) (10) V CC(H) M C DCS Vdc C P U VB VCC COM IN OUT VS U (24) RS Gating UH C PS RF R PF C BS C BSC (9) IN (UH) (12) V S(U) C SC RS Fault RS Gating W L Gating VL Gating UL RS RS C BPF C PF C FOD (8) C SC (7) C FOD (6) V FO C(SC) OUT(W L) C(FOD) VFO IN(W L) OUT(VL) IN(VL) IN(UL) COM OUT(UL) V SL N U (21) N V (22) N W (23) R SW (5) IN (W L) (4) IN (VL) (3) IN (UL) (2) COM R SV C PS C C PS PS (1) V CC(L) VCC R SU C SP15 C SPC15 Input Signal for Short-Circuit Protection W-Phase Current V-Phase Current U-Phase Current C FW C FV C FU R FW R FV R FU Note: 1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm) 2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible. 3) VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure11. 4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended. 5) VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms (typ.)) Please refer to the note 5 for calculation method. 6) Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be adopted for the prevention of input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. CPS should not be less than 1nF.(Recommended RS=100Ω , CPS=1nF) 7) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2μs. 9) Each capacitor should be mounted as close to the pins of the SPM as possible. 10) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive capacitor of around 0.1~0.22μF between the P&GND pins is recommended. 11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays. 12) CSPC15 should be over 1μF and mounted as close to the pins of the SPM as possible. Figure 13. Typical Application Circuit 13 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module Detailed Package Outline Drawings 14 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module Detailed Package Outline Drawings (Continued) 15 www.fairchildsemi.com FSBB20CH60CL Rev. D FSBB20CH60CL Smart Power Module Detailed Package Outline Drawings (Continued) 16 www.fairchildsemi.com FSBB20CH60CL Rev. D TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise ® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ PDP SPM™ Power-SPM™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com