Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FSBB20CH60C
Motion SPM® 3 Series
Features
General Description
• UL Certified No. E209204 (UL1557)
FSBB20CH60C is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and
fault reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the incoming
logic-level gate inputs to the high-voltage, high-current
drive signals required to properly drive the module's
internal IGBTs. Separate negative IGBT terminals are
available for each phase to support the widest variety of
control algorithms.
• 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC Substrate
• Built-in Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2500 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9044 - Motion SPM® 3 Series Users Guide
Figure 1. Package Overview
Package Marking and Ordering Information
Device
Device Marking
Package
Packing Type
Quantity
FSBB20CH60C
FSBB20CH60C
SPMCC-027
Rail
10
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
1
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
February 2016
FSBB20CH60C Motion SPM® 3 Series
Integrated Power Functions
• 600 V - 20 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 12 and 13.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
2
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
VCC(L)
Low-Side Common Bias Voltage for IC and IGBTs Driving
2
COM
Common Supply Ground
3
IN(UL)
Signal Input for Low-Side U-Phase
4
IN(VL)
Signal Input for Low-Side V-Phase
5
IN(WL)
Signal Input for Low-Side W-Phase
6
VFO
7
CFOD
Capacitor for Fault Output Duration Selection
8
CSC
Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
Fault Output
9
IN(UH)
Signal Input for High-Side U-Phase
10
VCC(H)
High-Side Common Bias Voltage for IC and IGBTs Driving
11
VB(U)
High-Side Bias Voltage for U-Phase IGBT Driving
12
VS(U)
High-Side Bias Voltage Ground for U-Phase IGBT Driving
13
IN(VH)
Signal Input for High-Side V-Phase
14
VCC(H)
High-Side Common Bias Voltage for IC and IGBTs Driving
15
VB(V)
High-Side Bias Voltage for V-Phase IGBT Driving
16
VS(V)
High-Side Bias Voltage Ground for V Phase IGBT Driving
17
IN(WH)
Signal Input for High-Side W-Phase
18
VCC(H)
High-Side Common Bias Voltage for IC and IGBTs Driving
19
VB(W)
High-Side Bias Voltage for W-Phase IGBT Driving
20
VS(W)
High-Side Bias Voltage Ground for W-Phase IGBT Driving
21
NU
Negative DC-Link Input for U-Phase
22
NV
Negative DC-Link Input for V-Phase
23
NW
Negative DC-Link Input for W-Phase
24
U
Output for U-Phase
25
V
Output for V-Phase
26
W
Output for W-Phase
27
P
Positive DC-Link Input
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
3
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
Internal Equivalent Circuit and Input/Output Pins
P (27)
(19) VB(W)
VB
(18) VCC(H)
(17) IN(WH)
(20) VS(W)
(15) VB(V)
(13) IN(VH)
(16) VS(V)
(11) VB(U)
(9) IN(UH)
(12) VS(U)
(8) CSC
VCC
COM
IN
OUT
VS
VCC
COM
IN
V (25)
OUT
VS
C(FOD)
(6) VFO
U (24)
NW (23)
VFO
(5) IN(WL)
(2) COM
W (26)
C(SC) OUT(WL)
(7) CFOD
(1) VCC(L)
VS
VB
(10) VCC(H)
(3) IN(UL)
OUT
VB
(14) VCC(H)
(4) IN(VL)
VCC
COM
IN
IN(WL) OUT(VL)
IN(VL)
NV (22)
IN(UL)
COM
VCC
OUT(UL)
VSL
NU (21)
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
4
www.fairchildsemi.com
unless otherwise specified.)
Inverter Part
Symbol
VPN
VPN(Surge)
Parameter
Conditions
Rating
Unit
Supply Voltage
Applied between P - NU, NV, NW
450
V
Supply Voltage (Surge)
Applied between P - NU, NV, NW
500
V
600
V
± IC
Each IGBT Collector Current
TC = 25°C, TJ ≤ 150°C
20
A
± ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ ≤ 150°C, Under 1 ms Pulse
Width
40
A
PC
Collector Dissipation
TC = 25°C per Chip
TJ
Operating Junction Temperature
(2nd Note 1)
VCES
Collector - Emitter Voltage
62
W
- 40 ~ 150
°C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 3 product is 150° C (at TC ≤ 125°C).
Control Part
Symbol
Rating
Unit
VCC
Control Supply Voltage
Parameter
Applied between VCC(H), VCC(L) - COM
Conditions
20
V
VBS
High-Side Control Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20
V
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3 ~ VCC + 0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3 ~ VCC + 0.3
V
IFO
Fault Output Current
Sink Current at VFO pin
5
mA
VSC
Current-Sensing Input Voltage
Applied between CSC - COM
-0.3 ~ VCC + 0.3
V
Rating
Unit
Bootstrap Diode Part
Symbol
VRRM
Parameter
Conditions
600
V
IF
Maximum Repetitive Reverse Voltage
Forward Current
TC = 25°C, TJ ≤ 150°C
0.5
A
IFP
Forward Current (Peak)
TC = 25°C, TJ ≤ 150°C Under 1 ms Pulse
Width
2.0
A
TJ
Operating Junction Temperature
-40 ~ 150
°C
Rating
Unit
Total System
Symbol
Parameter
Conditions
VPN(PROT)
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 μs
400
V
TC
Module Case Operation Temperature
-40°C ≤ TJ ≤ 150°C, See Figure 2
-40 ~ 125
°C
-40 ~ 125
°C
2500
Vrms
TSTG
Storage Temperature
VISO
Isolation Voltage
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
Thermal Resistance
Symbol
Rth(j-c)Q
Parameter
Junction to Case Thermal Resistance
Rth(j-c)F
Conditions
Min.
Typ. Max.
Unit
Inverter IGBT part (per 1 / 6 module)
-
-
2.0
°C / W
Inverter FWDi part (per 1 / 6 module)
-
-
3.0
°C / W
2nd Notes:
2. For the measurement point of case temperature (TC), please refer to Figure 2.
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
5
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
Absolute Maximum Ratings (TJ = 25°C,
Inverter Part
Symbol
VCE(SAT)
VF
HS
tON
Parameter
Conditions
Collector - Emitter Saturation VCC = VBS = 15 V
Voltage
VIN = 5 V
IC = 20 A, TJ = 25°C
FWDi Forward Voltage
VIN = 0 V
IF = 20 A, TJ = 25°C
Switching Times
VPN = 300 V, VCC = VBS = 15 V
IC = 20 A
VIN = 0 V ↔5 V, Inductive Load
(2nd Note 3)
Min.
Typ.
Max.
Unit
-
-
2.0
V
-
-
2.2
V
-
0.75
-
μs
-
0.2
-
μs
-
0.45
-
μs
tC(OFF)
-
0.15
-
μs
trr
-
0.1
-
μs
-
0.5
-
μs
-
0.3
-
μs
-
0.45
-
μs
-
0.15
-
μs
-
0.1
-
μs
-
-
1
mA
tC(ON)
tOFF
LS
VPN = 300 V, VCC = VBS = 15 V
IC = 20 A
VIN = 0 V ↔5 V, Inductive Load
(2nd Note 3)
tON
tC(ON)
tOFF
tC(OFF)
trr
Collector - Emitter Leakage VCE = VCES
Current
ICES
2nd Notes:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Control Part
Symbol
IQCCL
Parameter
Quiescent VCC Supply
Current
IQCCH
IQBS
Quiescent VBS Supply
Current
VFOH
Fault Output Voltage
VFOL
VSC(ref)
Conditions
Min.
Typ.
Max.
Unit
VCC = 15 V
IN(UL, VL, WL) = 0 V
VCC(L) - COM
-
-
23
mA
VCC = 15 V
IN(UH, VH, WH) = 0 V
VCC(H) - COM
-
-
600
μA
VBS = 15 V
IN(UH, VH, WH) = 0 V
VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
-
-
500
μA
VSC = 0 V, VFO Circuit: 4.7 kΩto 5 V Pull-up
4.5
-
-
V
VSC = 1 V, VFO Circuit: 4.7 kΩto 5 V Pull-up
-
-
0.8
V
0.45
0.50
0.55
V
Short-Circuit Current
Trip Level
VCC = 15 V (2nd Note 4)
TSD
Over-Temperature
Protection
Temperature at LVIC
-
160
-
°C
ΔTSD
Over-Temperature
Protection Hysterisis
Temperature at LVIC
-
5
-
°C
UVCCD
UVCCR
Supply Circuit
Under-Voltage Protection
Detection Level
10.7
11.9
13.0
V
Reset Level
11.2
12.4
13.4
V
UVBSD
Detection Level
UVBSR
Reset Level
10
11
12
V
10.5
11.5
12.5
V
tFOD
Fault-Out Pulse Width
CFOD = 33 nF (2nd Note 5)
1.0
1.8
-
ms
VIN(ON)
ON Threshold Voltage
2.8
-
-
V
VIN(OFF)
OFF Threshold Voltage
Applied between IN(UH), IN(VH), IN(WH), IN(UL),
IN(VL), IN(WL) - COM
-
-
0.8
V
2nd Notes:
4. Short-circuit protection is functioning only at the low-sides.
5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F]
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
6
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
FSBB20CH60C Motion SPM® 3 Series
100% I C 100% I C
trr
V CE
IC
IC
V CE
V IN
V IN
0
tON
tOFF
tC(ON)
V IN(ON)
tC(OFF)
V IN(OFF)
10% IC 90% I C 10% V CE
10% V CE
10% I C
(b) turn-off
(a) turn-on
Figure 4. Switching Time Definition
SWITCHING LOSS(ON) VS. COLLECTOR CURRENT
VCE=300V
1000 V =15V
CC
900 VIN=5V
TJ=25℃
800
TJ=150℃
SWITCHING LOSS, ESW(OFF) [uJ]
SWITCHING LOSS, ESW(ON) [uJ]
SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT
700
1100
700
600
500
400
300
200
VCE=300V
VCC=15V
600
VIN=5V
TJ=25℃
500
TJ=150℃
400
300
200
100
100
0
0
2
4
6
8
10
12
14
16
18
20
0
22
0
2
4
6
8
10
12
14
16
18
20
22
COLLECTOR CURRENT, Ic [AMPERES]
COLLECTOR CURRENT, Ic [AMPERES]
Figure 5. Switching Loss Characteristics (Typical)
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
7
www.fairchildsemi.com
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
Forward Voltage
IF = 0.1 A, TC = 25°C
-
2.5
-
V
trr
Reverse Recovery Time
IF = 0.1 A, TC = 25°C
-
80
-
ns
Max.
Unit
Built-in Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
IF [A]
0.5
0.4
0.3
0.2
0.1
0.0
o
TC=25 C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
VF [V]
Figure 6. Built-in Bootstrap Diode Characteristics
2nd Notes:
6. Built-in bootstrap diode includes around 15 Ω resistance characteristic.
Recommended Operating Conditions
Symbol
Parameter
Conditions
Min.
Typ.
VPN
Supply Voltage
Applied between P - NU, NV, NW
-
300
400
V
VCC
Control Supply Voltage
Applied between VCC(H), VCC(L) - COM
13.5
15.0
16.5
V
VBS
High-Side Bias Voltage
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
13.0
15.0
18.5
V
-1
-
1
V / μs
2
-
-
μs
-
20
kHz
4
V
dVCC / dt, Control Supply Variation
dVBS / dt
tdead
Blanking Time for Preventing Each Input Signal
Arm-Short
fPWM
PWM Input Signal
-40° C ≤ TC ≤ 125°C, -40° C ≤ TJ ≤ 150°C
-
VSEN
Voltage for Current Sensing
Applied between NU, NV, NW - COM
(Including Surge Voltage)
-4
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
8
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
Bootstrap Diode Part
Parameter
Mounting Torque
Conditions
Mounting Screw: M3
Device Flatness
Min.
Typ.
0.51
0
-
Recommended 0.62 N•m
See Figure 7
Weight
Max.
Unit
0.62
0.80
N•m
-
+120
μm
15.00
-
g
(+)
(+)
Figure 7. Flatness Measurement Position
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
9
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
Mechanical Characteristics and Ratings
FSBB20CH60C Motion SPM® 3 Series
Time Charts of Protective Function
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVCCR
a1
Control
Supply Voltage
a6
UVCCD
a3
a2
a7
a4
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 8. Under-Voltage Protection (Low-Side)
Input Signal
Protection
Circuit State
RESET
SET
RESET
UVBSR
Control
Supply Voltage
b1
UVBSD
b5
b3
b6
b2
b4
Output Current
High-level (no fault output)
Fault Output Signal
b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current.
Figure 9. Under-Voltage Protection (High-Side)
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
10
www.fairchildsemi.com
c6
Protection
Circuit State
SET
Internal IGBT
Gate - Emitter Voltage
c3
FSBB20CH60C Motion SPM® 3 Series
Lower Arms
Control Input
c7
RESET
c4
c2
SC
c1
c8
Output Current
SC Reference Voltage
Sensing Voltage
of Shunt Resistance
Fault Output Signal
c5
CR Circuit Time
Constant Delay
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short-circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “LOW”: IGBT OFF state.
c7 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
c8 : IGBT OFF state.
Figure 10. Short-Circuit Protection (Low-Side Operation Only)
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
11
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
+5 V
SPM
RPF = 4.7 ㏀
100 Ω
IN(UH) , IN(VH) , IN(WH)
100 Ω
MCU
IN (UL) , IN (VL) , IN(WL)
100 Ω
1 nF
VFO
CPF = 1 nF
1 nF
1 nF
COM
Figure 11. Recommended MCU I/O Interface Circuit
3rd Notes:
1. RC coupling at each input might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed circuit board. The input
signal section of the Motion SPM® 3 product integrates a 5 kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal
voltage drop at input terminal.
2. The logic input works with standard CMOS or LSTTL outputs.
These values depend on PWM control algorithm.
One-Leg Diagram of
Motion SPM 3 Product
P
0.1 µF
15 V
22 µF
Vcc
VB
IN
HO
COM VS
Inverter
Output
Vcc
1000 µF
1 µF
IN
OUT
COM VSL
N
Figure 12. Recommended Bootstrap Operation Circuit and Parameters
3rd Notes:
3. The ceramic capacitor placed between VCC - COM should be over 1 μF and mounted as close to the pins of the Motion SPM 3 product as possible.
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
12
www.fairchildsemi.com
(19) V B(W )
(18) V CC(H)
RS
C BS
Gating WH
C BSC
(17) IN(WH)
(20) V S(W )
C PS
(15) V B(V)
(14) V CC(H)
RS
C BS
Gating VH
C BSC
(16) V S(V)
C PS
M
C
U
(13) IN (VH)
(11) V B(U)
(10) V CC(H)
RS
C BS
Gating UH
C BSC
(9) IN (UH)
(12) V S(U)
C PS
P (27)
VB
VCC
OUT
COM
IN
W (26)
VS
VB
VCC
OUT
COM
IN
VS
V (25)
M
VB
VCC
C DCS
OUT
COM
IN
VS
Vdc
U (24)
RF
R PF
(8) CSC
C SC
(7) C FOD
RS
C FOD
Fault
Gating WL
Gating VL
Gating UL
(6) V FO
RS
(5) IN(WL)
RS
(4) IN (VL)
RS
(3) IN(UL)
C BPF
C PS C PS C PS
(2) COM
C PF
(1) V CC(L)
C SP15
Input Signal for
Short-Circuit Protection
C(SC)
OUT(WL)
C(FOD)
N W (23)
R SW
VFO
IN(WL) OUT(VL)
IN(VL)
NV (22)
R SV
IN(UL)
COM
OUT(UL)
VCC
VSL
N U (21)
R SU
C SPC15
R FW
W-Phase Current
V-Phase Current
U-Phase Current
R FV
R FU
C FW
CFV
C FU
Figure 13. Typical Application Circuit
4th Notes:
1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm).
2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM® 3 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible.
3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 kΩ resistance (please refer to Figure11).
4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example: if CFOD = 33 nF, then tFO = 1.8 ms
(typ.)) Please refer to the 2nd note 5 for calculation method.
6. Input signal is active-HIGH type. There is a 5 kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be used to prevent input signal
oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. CPS should not be less than 1 nF (recommended RS = 100 Ω , CPS = 1 nF).
7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2.0 μs.
9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible.
10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 μF between the P & GND pins is recommended.
11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
12. CSPC15 should be over 1 μF and mounted as close to the pins of the Motion SPM 3 product as possible.
©2008 Fairchild Semiconductor Corporation
FSBB20CH60C Rev. 1.6
13
www.fairchildsemi.com
FSBB20CH60C Motion SPM® 3 Series
+5 V +15 V
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com