HGTP7N60A4_NL

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • >100kHz Operation at 390V, 7A • 200kHz Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oC • Low Conduction Loss This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. Ordering Information PART NUMBER Symbol PACKAGE BRAND HGT1S7N60A4S9A TO-263AB G7N60A4 HGTG7N60A4 TO-247 G7N60A4 HGTP7N60A4 TO-220AB G7N60A4 C G NOTE: When ordering, use the entire part number. E Packaging JEDEC STYLE TO-247 JEDEC TO-220AB E C G E C G COLLECTOR (FLANGE) COLLECTOR (BOTTOM SIDE METAL) JEDEC TO-263AB COLLECTOR (FLANGE) G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2004 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified ALL TYPES UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 34 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 14 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V Single Pulse Avalanche Energy at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 25mJ at 7A Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300 260 oC oC Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = -10mA, VGE = 0V 20 - - V TJ = 25oC - - 250 µA TJ = 125oC TJ = 25oC TJ = 125oC - - 2 mA - 1.9 2.7 V - 1.6 2.2 V 4.5 5.9 7.0 V - - ±250 nA TJ = 150oC, RG = 25Ω, VGE = 15V L = 100µH, VCE = 600V 35 - - A EAS ICE = 7A, L = 500µH 25 - - mJ VGEP IC = 7A, VCE = 300V - 9.0 - V VGE = 15V - 37 45 nC VGE = 20V - 48 60 nC - 11 - ns - 11 - ns - 100 - ns - 45 - ns - 55 - µJ Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Pulsed Avalanche Energy Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time ICES VCE(SAT) VGE(TH) IGES SSOA Qg(ON) td(ON)I trI td(OFF)I tfI VCE = 600V IC = 7A, VGE = 15V IC = 250µA, VCE = 600V VGE = ±20V IC = 7A, VCE = 300V IGBT and Diode at TJ = 25oC ICE = 7A VCE = 390V VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 20) Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 - 120 150 µJ Turn-Off Energy (Note 3) EOFF - 60 75 µJ ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS MIN TYP MAX UNITS - 10 - ns - 7 - ns - 130 150 ns - 75 85 ns - 50 - µJ µJ IGBT and Diode at TJ = 125oC ICE = 7A VCE = 390V VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 20) Turn-On Energy (Note 2) EON1 Turn-On Energy (Note 2) EON2 - 200 215 Turn-Off Energy (Note 3) EOFF - 125 170 µJ Thermal Resistance Junction To Case RθJC - - 1.0 oC/W NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified VGE = 15V 30 25 20 15 10 5 0 25 50 75 100 125 150 40 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH 30 20 10 0 0 TC , CASE TEMPERATURE (oC) TC VGE 75oC 15V 200 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 1.0oC/W, SEE NOTES TJ = 125oC, RG = 25Ω, L = 2mH, V CE = 390V 5 300 400 500 600 700 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 20 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) 500 1 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 30 100 16 140 VCE = 390V, RG = 25Ω, TJ = 125oC 14 120 ISC 12 100 10 80 8 60 tSC 6 4 10 11 12 13 40 14 15 20 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 35 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2004 Fairchild Semiconductor Corporation FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 30 Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 25 TJ = 125oC 20 15 10 TJ = 25oC 5 0 TJ = 150oC 0.5 2.5 1.5 2.0 1.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 0 300 200 100 TJ = 25oC, VGE = 12V, VGE = 15V 15 10 0 2 4 6 8 10 12 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 125oC 5 TJ = 150oC 0.5 1.0 1.5 2.0 2.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) RG = 25Ω, L = 1mH, VCE = 390V 300 250 200 TJ = 125oC, VGE = 12V OR 15V 150 100 50 14 TJ = 25oC, VGE = 12V OR 15V 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 40 RG = 25Ω, L = 1mH, VCE = 390V TJ = 25oC, VGE = 12V trI , RISE TIME (ns) TJ = 125oC, VGE = 12V TJ = 25oC, VGE = 15V 12 3.0 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE RG = 25Ω, L = 1mH, VCE = 390V 14 TJ = 25oC 0 0 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT td(ON)I, TURN-ON DELAY TIME (ns) 20 0 EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) TJ = 125oC, VGE = 12V, VGE = 15V 16 25 350 RG = 25Ω, L = 1mH, VCE = 390V 400 0 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 3.0 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 500 30 TJ = 25oC, VGE = 12V, VGE = 15V 30 20 10 10 TJ = 125oC, VGE = 15V TJ = 125oC, VGE = 12V, VGE = 15V 0 8 0 2 4 6 8 10 12 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2004 Fairchild Semiconductor Corporation 14 0 2 4 6 8 10 12 14 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Typical Performance Curves 90 RG = 25Ω, L = 1mH, VCE = 390V RG = 25Ω, L = 1mH, VCE = 390V 80 160 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 180 Unless Otherwise Specified (Continued) VGE = 15V, TJ = 125oC 140 120 VGE = 12V, TJ = 125oC 100 VGE = 15V, TJ = 25oC 80 2 4 6 8 TJ = 125oC, VGE = 12V OR 15V 60 50 TJ = 25oC, VGE = 12V OR 15V 40 30 VGE = 12V, TJ = 25oC 60 0 70 10 12 20 14 0 2 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 120 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs TJ = 25oC 80 TJ = 125oC 60 TJ = -55oC 40 20 0 7 8 9 10 11 12 13 14 9 VCE = 200V 6 3 0 5 ICE = 7A ICE = 3.5A 125 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE ©2004 Fairchild Semiconductor Corporation 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (µJ) 400 100 10 15 20 25 30 35 40 FIGURE 14. GATE CHARGE WAVEFORMS ICE = 14A 75 14 QG , GATE CHARGE (nC) RG = 25Ω, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 50 12 VCE = 400V 0 15 600 0 25 10 VCE = 600V 12 FIGURE 13. TRANSFER CHARACTERISTIC 200 8 IG(REF) = 1mA, RL = 43Ω, TJ = 25oC VGE, GATE TO EMITTER VOLTAGE (V) 800 6 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 100 4 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 TJ = 125oC, L = 1mH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 1 ICE = 14A ICE = 7A ICE = 3.5A 0.1 10 100 1000 RG, GATE RESISTANCE (Ω) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Unless Otherwise Specified (Continued) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 1.4 FREQUENCY = 1MHz C, CAPACITANCE (nF) 1.2 1.0 0.8 CIES 0.6 0.4 COES 0.2 CRES 0 0 20 40 60 80 100 2.8 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs, 2.6 2.4 ICE = 14A 2.2 ICE = 7A 2.0 ICE = 3.5A 1.8 9 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 11 12 13 14 15 16 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 10 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 100 0.5 0.2 10-1 t1 0.1 PD 0.05 t2 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms RHRP660 90% 10% VGE EON2 EOFF L = 1mH VCE RG = 25Ω 90% + - ICE VDD = 390V 10% td(OFF)I tfI trI td(ON)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation FIGURE 21. SWITCHING TEST WAVEFORMS HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 21. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ POWEREDGE™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I12