Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.)
IRFR/U120A
BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C ) *
Ο Ο Ο
Value 100 8.4 5.3
1 O
Units V A A V mJ A mJ V/ns W W W/ C
Ο
34 + 20 _ 141 8.4 3.2 6.5 2.5 32 0.26 - 55 to +150
O 1 O 1 O 3 O
2
Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
Ο
TJ , TSTG TL
Ο
C
300
Thermal Resistance
Symbol R θ JC R θ JA Rθ JA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.9 50 110
Ο
Units
C /W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFR/U120A
Ο
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified) (TC
Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 100 -2.0 -----------------0.12 ------6.29 370 95 38 14 14 36 28 16 2.7 7.8 --4.0 100 -100 10 100 0.2 -480 110 45 40 40 90 70 22 --nC ns pF µA Ω Ω V Test Condition VGS=0V,ID=250 µA See Fig 7 V/ C ID=250µ A VDS=5V,ID=250 µA V
Ο
nA
VGS=20V VGS=-20V VDS=100V VDS=80V,TC=125 C VGS=10V,ID=4.2A VDS=40V,ID=4.2A
4 O 4 O
Ο
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, RG=18Ω See Fig 13 VDS=80V,VGS=10V, ID=9.2A See Fig 6 & Fig 12
45 OO 45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------98 0.34 8.4 34 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=8.4A,VGS=0V TJ=25 C ,IF=9.2A diF/dt=100A/ µs
4 O
Ο Ο
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=3mH, I AS=8.4A, VDD=25V, RG=27Ω , Starting T J =25oC o 3 _ _ _ O ISD < 9.2A, di/dt < 300A/ µs, V DD < BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle
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