KSB798

KSB798 PNP Epitaxial Silicon Transistor July 2005 KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 79 PY 1 8 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) * Ta = 25°C unless otherwise noted Parameter Ratings -30 -25 -5 -1.0 -1.5 2.0 150 -55 ~ 150 Units V V V A A W °C °C Collector Power Dissipation Junction Temperature Storage Temperature * PW ≤ 10ms, Duty cycle ≤ 50% Electrical Characteristics T Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) fT Cob a= 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = -100µA, IE = 0 IC = -1mA, IB = 0 IE = -100µA, IC = 0 VCB = -30V, IE = 0 VEB = -5V, IC = 0 VCE = -1V, IC = -0.1A VCE = -1V, IC = -1.0A IC = -1.0A, IB = -0.1A IC = -1.0A, IB = -0.1A VCE = -6V, IC = -10mA VCE = -6V, IC = -10mA VCB = -6V, IE = 0, f = 1MHz Min. -30 -25 -5 Typ. Max. Units V V V -0.1 -0.1 90 50 400 -0.4 -1.2 -0.6 110 18 -0.7 µA µA V V V MHz pF ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSB798 Rev. B1 KSB798 PNP Epitaxial Silicon Transistor hFE Classification Classification hFE1 O 90 ~ 180 Y 135 ~ 270 G 200 ~ 400 Package Marking and Ordering Information Device Marking 798 Device KSB798 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 KSB798 Rev. B1 2 www.fairchildsemi.com KSB798 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic -1.0 -0.9 Figure 2. DC Current Gain 1000 VCE= -1V IC[A], COLLECTOR CURRENT -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 IB = -8mA IB = -7mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = -1mA hFE, DC CURRENT GAIN -10 100 10 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 Figure 4. Collector Output Capacitance 100 IC = 10 IB f = 1MHz IE=0 -1 VBE(sat) Cob[pF], CAPACITANCE 10 -0.1 VCE(sat) -0.01 1 -1 -10 -100 -1000 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Current Gain Bandwidth Product fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = -6V Figure 6. Safe Operating Area -10 1.TC=25 C 2.Single pulse o 100 IC[A], COLLECTOR CURRENT -1 0m 20 s DC -0.1 10 1 -0.01 10 100 -1 -10 -100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE KSB798 Rev. B1 3 www.fairchildsemi.com KSB798 PNP Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters KSB798 Rev. B1 4 www.fairchildsemi.com KSB798 PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 KSB798 Rev. B1 www.fairchildsemi.com