KSC2784

KSC2784 KSC2784 Audio Frequency Low Noise Amplifier • Complement to KSA1174 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 300 150 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob NL Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Level Test Condition VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=0.1mA VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 25 2.5 40 Min. Typ. Max. 50 50 1200 0.65 0.3 V V MHz pF mV Units nA nA hFE2 Classification Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800 U 600 ~ 1200 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2784 Typical Characteristics 10 1.0 IB = 1.4µA IB = 1.2µA IB = 16µA IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT 8 IB = 14µA IB = 12µA 0.8 IB = 1.0µA IB = 0.8µA IB = 0.6µA 6 IB = 10µA IB = 8µA IB = 6µA 0.6 4 0.4 IB = 0.4µA 0.2 2 IB = 4µA IB = 2µA IB = 0.2µA 0.0 0 0 1 2 3 4 5 0 20 40 60 80 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristics Figure 2. Static Characteristics VCE(sat), VBE(sat) [V], SATURATION VOLTAGE 1000 10 800 VCE = 6 V Pulse Test IC = 10 IB Pulse Test hFE, DC CURRENT GAIN 1 600 VBE (sat) 400 0.1 200 VCE (sat) 0 0.01 0.1 1 10 100 0.01 0.1 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 3. DC Currnet Gain Figure 4. Saturation Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10000 10 VCE = 10V 1000 Cob[pF], OUTPUT CAPACITANCE f = 1 MHz IE = 0 1 100 10 0.1 1 10 100 0.1 1 10 100 IC [mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. fT - IC Figure 6. Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2784 Package Dimensions TO-92S 4.00 ±0.20 2.31 ±0.20 0.66 MAX. (1.10) 0.49 ±0.10 1.27TYP [1.27±0.20] 3.72 ±0.20 1.27TYP [1.27±0.20] 14.47 ±0.30 3.70 ±0.20 0.35 –0.05 +0.10 2.86 ±0.20 0.77 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1