KSC5302D

KSC5302D KSC5302D High Voltage High Speed Power Switch Application High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread • Even though corner spirit product • Low base drive requirement • • • • B Equivalent Circuit C 1 E TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 800 400 12 2 5 1 2 50 150 - 55 ~ 150 Units V V V A A A A W °C °C Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 2.5 62.5 Unit °C/W ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302D Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob tON tSTG tF tSTG tF VF trr Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn On time Storage Time Fall Time Storage Time Fall Time Diode Forward Voltage *Reverse Recovery Time (di/dt = 10A/µs) Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.4A VCE=1V, IC=1A IC=0.4A, IB=0.04A IC=1A, IB=0.2A IC=0.4A, IB=0.04A IC=1A, IB=0.2A VCB = 10V, f=1MHz VCC=300V, IC =1A IB1 = 0.2A, IB2=-0.5A, RL = 300Ω VCC=15V, VZ=300V IC = 0.8A, IB1 = 0.16A IB2 = -0.16A , L = 200µH IF = 0.4A IF = 1A IF = 0.2A IF = 0.4A IF = 1A Min. 800 400 12 20 10 Typ. 800 1 1.4 Max. 10 10 0.4 0.5 0.9 1.0 75 150 2 0.2 2.35 150 1.2 1.5 V V V V pF ns µs µs µs ns V V ns µs µs Units V V V µA µA *Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10% ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302D Typcial Characteristics 3.0 100 Ta = 125 C o VCE = 5V IC[A], COLLECTOR CURRENT 2.5 2.0 hFE, DC CURRENT GAIN 1.5 IB = 200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA 25 C o -25 C o 10 1.0 0.5 IB = 0 0.0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 Ta = 125 C 25 C o -20 C o o VCE = 1V IC = 10 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 VCE(sat) 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 10 IC = 5IB IC = 5IB VCE(sat)[V], SATURATION VOLTAGE 25 C 1 o VBE(sat), SATURATION VOLTAGE Ta = 125 C 0.1 o 1 -20 C 25 C Ta = 125 C o o o -20 C o 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Collector-Base Saturation Voltage Figure 6. Base-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302D Typical Characteristics (Continued) 10 10 tSTG, tF [µs], TIME 1 tSTG Vf[V], FORWARD DIODE VOLTAGE 10 VCC = 300V IC = 5IB1 = -2.5IB2 1 tF 0.1 0.01 0.1 1 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IF[A], FORWARD DIODE CURRENT Figure 7. Switching Time Figure 8. Forwrd Diode Voltage 1.6 1000 di/dt = 10A/µs f = 1MHz trr[µs], REVERSE RECOVERY TIME Cob[pF], CAPACITANCE 0.2 0.4 0.6 0.8 1.0 1.4 100 1.2 1.0 10 0.8 1 1 10 100 If[A], FORWARD CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 9. Reverse Recovery Time Figure 10. Collector Outpt Capacitance 100 80 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 1000 10 60 5ms 1 1ms 10µs 1µs DC 40 0.1 20 0.01 10 0 100 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 11. Safe Operating Area Figure 12. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302D Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1