NDS7002

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted 2N7000 2N7002 NDS7002A Units VDSS Drain-Source Voltage 60 60 V V V VDGR VGSS Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs) ±20 ±40 200 500 400 3.2 -55 to 150 300 115 800 200 1.6 280 1500 300 2.4 -65 to 150 ID PD TJ,TSTG TL Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Derated above 25 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds o mA mW mW/°C °C °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W © 1997 Fairchild Semiconductor Corporation 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol Parameter OFF CHARACTERISTICS A = 25°C unless otherwise noted Conditions Type Min Typ Max Units BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 µA VDS = 48 V, VGS = 0 V TJ=125°C VDS = 60 V, VGS = 0 V TJ=125°C All 2N7000 60 1 1 V µA mA µA mA nA nA nA nA 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 1 0.5 10 100 -10 -100 IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V VGS = -20 V, VDS = 0 V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 µA 2N7000 2N7002 NDS7002A 2N7000 0.8 1 2.1 2.1 1.2 1.9 1.8 3 2.5 5 9 5.3 7.5 13.5 7.5 13.5 2 3.5 3 5 2.5 0.4 3.75 1.5 1 0.15 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA TJ =125°C VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA TJ =100°C VGS = 5.0 V, ID = 50 mA TJ =100C VGS = 10 V, ID = 500 mA TJ =125°C VGS = 5.0 V, ID = 50 mA TJ =125°C Ω 2N7002 1.2 1.7 1.7 2.4 NDS7002A 1.2 2 1.7 2.8 VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA 2N7000 0.6 0.14 0.6 0.09 0.6 0.09 V 2N7002 NDS7002A 2N7000.SAM Rev. A1 Electrical Characteristics T Symbol Parameter A = 25oC unless otherwise noted Conditions Type Min Typ Max Units ON CHARACTERISTICS Continued (Note 1) ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V VGS = 10 V, VDS > 2 VDS(on) VGS = 10 V, VDS > 2 VDS(on) 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A 75 500 500 100 80 80 600 2700 2700 320 320 320 20 11 4 50 25 5 10 mA gFS Forward Transconductance VDS = 10 V, ID = 200 mA VDS > 2 VDS(on), ID = 200 mA VDS > 2 VDS(on), ID = 200 mA mS DYNAMIC CHARACTERISTICS Ciss Coss Crss ton Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz All All All pF pF pF ns VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 Ω, ID = 200 mA, VGS = 10 V, RGEN = 25 Ω 2N7000 2N700 NDS7002A 20 toff Turn-Off Time VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 Ω, ID = 200 mA, VGS = 10 V, RGEN = 25 Ω 2N7000 10 ns 2N700 NDS7002A 20 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 115 mA (Note 1) VGS = 0 V, IS = 400 mA (Note 1) 2N7002 NDS7002A 2N7002 NDS7002A 2N7002 NDS7002A 115 280 0.8 1.5 0.88 0.88 1.5 1.2 mA A V Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. 2N7000.SAM Rev. A1 Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 , DRA IN-SOURCE CURRENT (A) VGS = 10V 1 .5 7.0 6.0 1 RDS(on) , NORMALIZED DRAIN -SOURCE ON-RESISTANCE 9.0 8.0 V G S = 4.0V 2 .5 4 .5 5 .0 6 .0 2 7 .0 1 .5 5.0 0 .5 8 .0 9 .0 10 4.0 3.0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 1 I 0 D 0 .5 0 0 .4 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 3 DRAIN-SOURCE ON-RESISTANCE DRAIN -SOURCE ON-RESISTANCE V GS = 10V 1.75 V G S = 1 0V 2 .5 R DS(ON) , NORM A LIZED I D = 500m A R DS(on) , NORMALIZED 1.5 2 TJ = 125°C 1.25 1 .5 2 5°C 1 1 - 55°C 0 .5 0.75 0.5 -5 0 -2 5 0 25 50 75 100 T , JUNCTION T EMPERATURE (°C) J 125 150 0 0 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current and Temperature 2 1 .1 VDS = 1 0 V ID , DRA IN CURRENT (A) 1.6 T J = -55°C 2 5°C 125°C Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1 .0 5 V DS = VGS ID = 1 mA 1 1.2 0 .9 5 0.8 0 .9 0.4 0 .8 5 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V) 10 0 .8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 2N7000 / 2N7002 /NDS7002A DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 2 I D = 250µA 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 IS , REVERSE DRA IN CURRENT (A) 1 0 .5 V GS = 0 V , NORMALIZED TJ = 125°C 0 .1 0 .0 5 2 5°C -55°C SSD BV 0 .0 1 0 .0 0 5 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 150 0 .0 0 1 0 .2 0 .4 V SD 0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) 1 .4 Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 60 10 C i ss CAPACITANCE (pF) 20 VGS , GATE-SOURCE VOLTAGE (V) 40 V DS = 2 5 V 8 C o ss 10 6 ID = 5 0 0 m A 4 5 C r ss f = 1 MHz V GS = 0V 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 2 2 280m A 115m A 1 0 0 0 .4 0 .8 1 .2 Q g , GATE CHARGE (nC) 1 .6 2 Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2N7000.SAM Rev. A1 Typical Electrical Characteristics (continued) 3 2 1 I D , DRAIN CURRENT (A) 0.5 RD S( ) ON Lim 3 2 1 10 t mi 0u s 0u ID , DRAIN CURRENT (A) it 10 1m 10 ms 10 0m s 1s s 0.5 RD S( O Li N) 1m s s 0.1 0.05 0.1 0.05 10 10 0m ms V GS = 1 0 V SINGLE PULSE 0.01 0.005 1 2 T A = 25°C 10 s DC VGS = 10V SINGLE PULSE 0.01 0.005 1 T A = 25°C 2 1s 10 s DC s 5 10 20 30 V DS , D RAIN-SOURCE VOLTAGE (V) 60 80 5 10 20 30 V DS , D RAIN-SOURCE VOLTAGE (V) 60 80 Figure 13. 2N7000 Maximum Safe Operating Area 3 2 1 I D , DRAIN CURRENT (A) 0.5 RD S( ON Figure 14. 2N7002 Maximum Safe Operating Area im )L it 10 1m s 0u s 10 0.1 0.05 ms 10 0m s V GS = 1 0 V SINGLE PULSE 0.01 0.005 1 2 T A = 25°C 1s 10 DC s 5 10 20 30 V DS , D RAIN-SOURCE VOLTAGE (V) 60 80 Figure 15. NDS7000A Maximum Safe Operating Area 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 D = 0 .5 0.2 0.1 0.05 0 .2 0 .1 P(pk) 0 .05 R θJA (t) = r(t) * R θJA Rθ = (See Datasheet) JA t1 0 .02 0 .01 t2 0.02 0.01 0.0001 S ingle Pulse TJ - T A = P * RθJA (t) D uty Cycle, D = t1 /t2 0.001 0.01 Figure 16. TO-92, 2N7000 Transient Thermal Response Curve 1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 P(pk) 0.1 t 1, TIME (sec) 1 10 100 300 r(t), NORMALIZED EFFECTIVE R θJA (t) = r(t) * R θJA Rθ = (See Datasheet) JA 0.01 S ingle Pulse t1 t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 TJ - T A = P * RθJA (t) D uty Cycle, D = t1 /t2 100 300 Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve 2N7000.SAM Rev. A1 TO-92 Tape and Reel Data and Package Dimensions TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 QTY: HTB:B 10000 See Fig 2.0 for various Reeling Styles NSID: PN2222N SPEC: D/C1: D9842 SPEC REV: QA REV: B2 FSCINT Label (FSCINT) 5 Reels per Intermediate Box F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 TO-92 TNR/AMMO PACKING INFROMATION Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units FSCINT Label 327mm x 158mm x 135mm Immediate Box Customized Label 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Intermediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE J18Z J05Z NO EOL CODE DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data and Package Dimensions, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha H1 HO d L L1 W1 S WO W2 W t t1 P1 F1 P2 DO ITEM DESCRIPTION PO Base of Package to Lead Bend Component Height Lead Clinch Height Component Base Height Component Alignment ( side/side ) Component Alignment ( front/back ) Component Pitch Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness SYMBOL b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S DIMENSION 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max) User Direction of Feed TO-92 Reel Configuration: Figure 5.0 Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR Label Customized Label D2 Reel Diameter Arbor Hole Diameter (Standard) (Small Hole) Core Diameter Hub Recess Inner Diameter Hub Recess Depth Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches D1 D2 D2 D3 D4 W1 W2 W3 13.975 1.160 0.650 3.100 2.700 0.370 1.630 14.025 1.200 0.700 3.300 3.100 0.570 1.690 2.090 W2 D3 July 1999, Rev. A TO-92 Tape and Reel Data and Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 January 2000, Rev. B SOT-23 Tape and Reel Data and Package Dimensions SOT-23 Packaging Configuration: Figure 1. 0 Customized La bel Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a m ultilayer film (Heat Activated Adhesive in na ture) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled pa in standard option are shipped with rts 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color an is made of polystyrene plastic (antid static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and s ome other options are described in the P ackaging Information table. These full reels are individually labeled and placed inside as tanda intermediate made of recyclable corrugated rd brown pap with a Fairchil d logo printing. One pizza box er contains eight reels maximum. And thes intermediate e boxes are placed inside a labeled shipping box which comes in different sizes depending on t e nu h mber of parts shippe d. Antistatic Cover Tape Human Readable Label Embossed Carrier Tape 3P SOT-23 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code ) TNR 3,000 7" Dia 187x107x183 24,000 0.0082 0.1175 D87Z TNR 10,000 13" 343x343x64 30,000 0.0082 0.4006 3P 3P 3P SOT-23 Unit Orientation 343mm x 342mm x 64mm Intermediate box for L87Z Option Human Readable Label Human Readable Label sample H uman readable Label SOT-23 Tape Leader and Trailer Configuration: Figure 2. 0 187mm x 107mm x 183mm Intermediate Box for Stand Option ard Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 75 empty poc kets Leader Tape 500mm minimum or 125 empty pockets September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 T E1 P2 D0 D1 F E2 B0 Wc W Tc K0 P1 A0 User Direction of Feed Dimensions are in millimeter Pkg type SOT-23 (8mm) A0 3.15 +/-0.10 B0 2.77 +/-0.10 W 8.0 +/-0.3 D0 1.55 +/-0.05 D1 1.125 +/-0.125 E1 1.75 +/-0.10 E2 6.25 min F 3.50 +/-0.05 P1 4.0 +/-0.1 P0 4.0 +/-0.1 K0 1.30 +/-0.10 T 0.228 +/-0.013 Wc 5.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SOT-23 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 8mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 4.00 100 Dim W1 0.331 +0.059/-0.000 8.4 +1.5/0 0.331 +0.059/-0.000 8.4 +1.5/0 Dim W2 0.567 14.4 0.567 14.4 Dim W3 (LSL-USL) 0.311 – 0.429 7.9 – 10.9 0.311 – 0.429 7.9 – 10.9 8mm 13" Dia September 1999, Rev. C SOT-23 Tape and Reel Data and Package Dimensions, continued SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench  QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D