SGM2N60UF
IGBT
SGM2N60UF
Ultrafast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
• High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A • High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
D
C
S G
G E
SOT-223
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) PD TJ Tstg TL
TC = 25°C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ T C = 2 5° C Collector Current @ TC = 100°C Pulsed Collector Current Maximum Power Dissipation @ Ta = 25°C - Derate above 25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
SGM2N60UF 600 ± 20 2.4 1.2 10 2.1 0.017 -55 to +150 -55 to +150 300
Units V V A A A W W/°C °C °C °C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. -Max. 60 Units °C/W
Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2003 Fairchild Semiconductor Corporation
SGM2N60UF Rev.A
SGM2N60UF
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 1.2mA, VCE = VGE IC = 1.2A, VGE = 15V IC = 2.4A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---98 18 4 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 20 80 95 30 13 43 19 24 115 176 36 27 63 9 3 1.5 7.5 --130 160 --70 --200 250 --100 14 5 3 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 25°C
VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 125°C
VCE = 300 V, IC = 1.2A, VGE = 15V Measured 5mm from PKG
©2003 Fairchild Semiconductor Corporation
SGM2N60UF Rev. A
SGM2N60UF
12 Common Emitter TC = 25 C 10
o
6 20V 5 15V
Common Emitter V GE = 1 5V T C = 25 C T C = 1 25 C
o o
Collector Current, IC [A]
Collector Current, I C [A]
8 12V 6 V GE = 1 0V 4
4
3
2
2
1
0 0 2 4 6 8
0 0.5 1 10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4
3.0 Common Emitter V GE = 1 5V 2.5 2.4A
V CC = 3 00V Load Current : peak of square wave
Collector - Emitter Voltage, V E [V] C
3
Load Current [A]
2.0
1.2A 2 I C = 0 .6A 1
1.5
1.0
0.5
Duty cycle : 50% T C = 1 00 C Power Dissipation = 4W 0.1 1 10 100 1000
o
0 0 30 60 90
o
0.0 120 150
Case Temperature, TC [ C]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 2 5 C
o
20 Common Emitter T C = 125 C
o
Collector - Emitter Voltage, VCE [V]
16
Collector - Emitter Voltage, V CE [V]
16
12
12
8
8 2.4A 4 IC = 0.6A 0 1.2A
4 IC = 0 .6A
1.2A
2.4A
0 0 4 8 12 16 20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGM2N60UF Rev. A
SGM2N60UF
160
Common Emitter V GE = 0 V, f = 1MHz o T C = 25 C Cies
100 Common Emitter VCC = 300V, V GE = + 15V IC = 1.2A TC = 2 5 C TC = 125 C
o o
120
Capacitance [pF]
80 Coes 40 Cres 0 1 10 30
Switching Time [ns]
Ton
Tr
10 10 100 500
Collector - Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
600
Common Emitter V CC = 3 00V, V GE = + 15V IC = 1 .2A TC = 2 5 C
o o
100 Common Emitter VCC = 300V, V GE = + 15V IC = 1.2A TC = 2 5 C Toff TC = 125 C
o o
Switching Time [ns]
T C = 1 25 C
Switching Loss [uJ]
Eon Eoff
Tf Toff 100
Eoff
Tf
10
50 10 100 500
5 10 100 500
Gate Resistance, RG [Ω ]
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
100 Common Emitter VCC = 300V, V GE = +15V RG = 2 00 Ω
1000 Common Emitter V CC = 300V, V GE = + 15V R G = 200 Ω TC = 2 5 C
o o
Switching Time [ns]
Switching Time [ns]
TC = 2 5 C o TC = 1 25 C
o
T C = 125 C Toff Toff Tf Tf
Ton
Tr
100
10 0.5 1.0 1.5 2.0 2.5
0.5 1.0 1.5 2.0 2.5
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGM2N60UF Rev. A
SGM2N60UF
100 Common Emitter V CC = 3 00V, V GE = + 15V R G = 2 00 Ω
15 Common Emitter RL = 250 Ω
Gate - Emitter Voltage, V GE [ V ]
Tc = 25 C 12
o
TC = 2 5 C
o o
Switching Loss [uJ]
T C = 1 25 C
9 300 V 6 VCE = 100 V 3 200 V
Eon Eon Eoff 10
Eoff 0.5 1.0 1.5 2.0 2.5
0 0 2 4 6 8 10
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
20
10
IC MAX. (Pulsed)
10
50µs
Collector Current, I
C
1
1㎳
0.1
DC Operation
Collector Current, I C [A]
[A]
IC MAX. (Continuous)
100µs
1
0.01
1E-3
Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature
Safe Operating Area V GE=20V, T C=100 C
o
1
10 100 Collector-Emitter Voltage, VCE [V]
1000
0.1 1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
2
T h e r m a l R e s p o n s e , / Wt ] jc [ CZh
D = 0 .5 0 .2 10
1
0 .1 0 .0 5 0 .0 2
o
10
0
0 .0 1
Pdm t1
s i n g le p u l s e
t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
R e c t a n g u la r P u ls e D u r a t io n [ s e c ]
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation SGM2N60UF Rev. A
SGM2N60UF
Package Dimension
SOT-223
0.08MAX
3.00 ±0.10
MAX1.80
1.75 ±0.20
3.50 ±0.20
(0.60)
0.65 ±0.20
+0.04
0.06 –0.02
2.30 TYP (0.95) 4.60 ±0.25
0.70 ±0.10 (0.95)
+0.10 0.25 –0.05
(0.60)
0°~
10
°
1.60 ±0.20
(0.46)
(0.89)
6.50 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation SGM2N60UF Rev. A
7.00 ±0.30
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I5