SGP10N60RUFD

SGP10N60RUFD IGBT SGP10N60RUFD Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10A High input impedance CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G GCE TO-220 TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGP10N60RUFD 600 ± 20 16 10 30 12 92 10 75 30 -55 to +150 -55 to +150 300 Units V V A A A A A us W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 1.6 2.5 62.5 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. A1 SGP10N60RUFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 10mA, VCE = VGE IC = 10A, VGE = 15V IC = 16A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---660 115 25 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----15 30 36 158 141 215 356 16 33 42 242 161 452 613 -30 5 8 7.5 --50 200 --500 --60 350 --860 -45 10 16 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 10A, VGE = 15V Measured 5mm from PKG = 25°C unless otherwise noted Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C Test Conditions T C = 2 5° C IF = 12A TC = 100°C T C = 2 5° C TC = 100°C IF = 12A, di/dt = 200A/µs T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.4 1.3 42 60 3.5 5.6 80 220 Max. 1.7 -60 -6.0 -180 -- Units V ns A nC ©2002 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. A1 SGP10N60RUFD 40 35 Common Emitter T C = 25 ℃ 30 20V 15V 25 12V Collector Current, I C [A] 30 25 20 15 10 V GE = 10V Collector Current, IC [A] Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 20 15 10 5 5 0 0 2 4 6 8 0 1 10 Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 16 Common Emitter V GE = 1 5V 14 20A 12 VCC = 3 00V Load Current : peak of square wave Collector - Emitter Voltage, VC E [V] 3.5 3.0 Load Current [A] 10 8 6 4 2.5 10A 2.0 IC = 5 A 1.5 2 1.0 -50 0 50 100 150 0 Duty cycle : 50% T C = 1 00℃ Power Dissipation = 18W 0.1 1 10 100 1000 Case Temperature, T C [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25℃ 20 Common Emitter T C = 125 ℃ Collector - Emitter Voltage, VC E [V] Collector - Emitter Voltage, VCE [V] 16 16 12 12 8 8 4 IC = 5 A 0 0 4 8 20A 10A 20A 4 IC = 5A 0 10A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGP10N60RUFD Rev. A1 SGP10N60RUFD 1400 Common Emitter V GE = 0V, f = 1MHz T C = 25 ℃ Common Emitter V CC = 300V, V GE = ± 15V IC = 10A T C = 25 ℃ ━━ T C = 125 ℃ -----100 1200 Ton Capacitance [pF] Switching Time [ns] 1000 Cies 800 Tr 600 400 Coes 200 Cres 0 1 10 10 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time [ns] Common Emitter VCC = 3 00V, V GE = ± 15V IC = 1 0A TC = 25 ℃ ━━ TC = 1 25 ℃ ------ 1000 Toff Toff Tf Common Emitter VCC = 300V, VGE = ± 15V IC = 10A TC = 2 5℃ ━━ TC = 125℃ -----Eoff Eon Eoff Tf Switching Loss [uJ] 100 100 10 100 10 100 Gate Resistance, R G [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 2 0Ω T C = 25 ℃ ━━ T C = 1 25 ℃ - ----Common Emitter VGE = ± 15V, RG = 20 Ω TC = 25 ℃ ━━ TC = 125 ℃ -----Ton Switching Time [ns] 100 Switching Time [ns] Toff Tf Toff Tf 100 Tr 10 6 8 10 12 14 16 18 20 6 8 10 12 14 16 18 20 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGP10N60RUFD Rev. A1 SGP10N60RUFD 15 1000 Common Emitter VGE = ± 15V, RG = 20 Ω TC = 2 5℃ ━━ TC = 125℃ ------ Gate - Emitter Voltage, VGE [ V ] Common Emitter RL = 3 0 Ω T C = 25 ℃ VCC = 100 V 3 00 V 2 00 V 12 Switching Loss [uJ] 9 Eoff 6 100 Eon 3 0 5 10 15 20 0 10 20 30 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 IC M AX. (Pulsed) 50us IC M AX. (Continuous) 50 Collector Current, I C [A] 10 100us 1㎳ Collector Current, I C [A] 10 DC Operation 1 Single Nonrepetitive Pulse T C = 25 ℃ Curves must be derated linearly with increase in temperature 0.1 0.1 1 10 100 1000 1 1 Safe Operating Area V GE = 2 0V, T C = 1 00℃ 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 10 Thermal Response, Zthjc [℃/W] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Pdm t1 t2 0.01 single pulse 10 -5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. A1 SGP10N60RUFD 100 100 T C = 25 ℃ ━━ T C = 1 00 ℃ -----V R = 200V IF = 12A T C = 2 5℃ ━━ T C = 100℃ ------ Reverse Recovery Current, I rr [A] Forward Current, I F [A] 10 10 1 0 1 2 3 1 100 1000 Forward Voltage Drop, VFM [V] di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 600 100 V R = 200V IF = 12A T C = 2 5 ℃ ━━ T C = 100 ℃ -----VR=200V IF=12A TC = 25 ℃ ━━ TC = 1 00 ℃ ------ Stored Recovery Charge, Qr r [nC] 400 Reverce Recovery Time, t rr [ns] 1000 500 80 60 300 40 200 100 20 0 100 0 100 1000 di/dt [A/us] di/dt [A/us] Fig 20. Stored Charge Fig 21. Reverse Recovery Time ©2002 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. A1 SGP10N60RUFD Package Dimension TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5