SGP5N60RUF

SGP5N60RUF IGBT SGP5N60RUF Short Circuit Rated IGBT General Description Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G GCE TO-220 TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGP5N60RUF 600 ± 20 8 5 15 10 60 25 -55 to +150 -55 to +150 300 Units V V A A A us W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 2.0 62.5 Units °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGP5N60RUF Rev. A1 SGP5N60RUF Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 5mA, VCE = VGE IC = 5A, VGE = 15V IC = 8A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---354 67 14 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----13 24 34 136 88 107 195 13 26 40 250 103 220 323 -16 3 7 7.5 --50 200 --280 --60 350 ----24 6 14 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH VCC = 300 V, IC = 5A, RG = 40Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 5A, RG = 40Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = VCC = 300 V, VGE = 15V 100°C VCE = 300 V, IC = 5A, VGE = 15V Measured 5mm from PKG ©2002 Fairchild Semiconductor Corporation SGP5N60RUF Rev. A1 SGP5N60RUF 25 Common Emitter T C = 25℃ 20 20V 20 15V Collector Current, I C [A] 15 Collector Current, IC [A] 16 Common Emitter V GE = 15V T C = 2 5℃ ━━ T C = 125℃ ------ 12V 12 10 VGE = 10V 5 8 4 0 0 2 4 6 8 0 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4.0 10 Common Emitter V GE = 1 5V VCC = 3 00V Load Current : peak of square wave Collector - Emitter Voltage, VC E [V] 3.5 10A 8 Load Current [A] 3.0 6 2.5 5A 2.0 IC = 3 A 1.5 4 2 Duty cycle : 50% T C = 1 00℃ Power Dissipation = 12W 0.1 1 10 100 1000 1.0 -50 0 50 100 150 0 Case Temperature, TC [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 2 5℃ 20 Common Emitter T C = 1 25 ℃ Collector - Emitter Voltage, VCE [V] 16 Collector - Emitter Voltage, VC E [V] 16 12 12 8 8 4 IC = 3 A 0 0 4 8 10A 5A 10A 4 IC = 3 A 0 5A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGP5N60RUF Rev. A1 SGP5N60RUF 700 Common Emitter VGE = 0 V, f = 1MHz TC = 2 5 ℃ 600 Capacitance [pF] 500 400 Cies 300 200 Coes 100 Cres 0 1 10 Collector - Emitter Voltage, V CE [V] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Common Emitter VCC = 300V, V GE = ± 15V IC = 5A TC = 25 ℃ ━━ TC = 125 ℃ ------ Switching Time [ns] Switching Loss [uJ] Eoff Eon 100 Eoff Toff Tf Toff Tf 100 10 10 100 10 Common Emitter V CC = 3 00V, VGE = ± 15V IC = 5 A T C = 25 ℃ ━━ T C = 1 25 ℃ -----100 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance Common Emitter VGE = ± 15V, RG = 4 0 Ω TC = 2 5℃ ━━ TC = 1 25℃ ------ 1000 Common Emitter VGE = ± 15V, RG = 40 Ω TC = 2 5℃ ━━ TC = 125℃ ------ Switching Time [ns] 100 Ton Tr Switching Time [ns] Tf Toff Toff Tf 100 10 3 4 5 6 7 8 9 10 3 4 5 6 7 8 9 10 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGP5N60RUF Rev. A1 SGP5N60RUF 1000 Common Emitter VGE = ± 15V, RG = 40Ω T C = 25℃ ━━ T C = 125℃ ------ 15 Common Emitter R L = 6 0Ω T C = 2 5℃ Gate - Emitter Voltage, V [V] GE 12 300V 200V Switching Loss [uJ] 9 VCC = 1 00V Eoff 100 Eon 6 3 0 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 Collector Current, IC [A] Gate Charge, Qg [nC] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 50 Ic MAX. (Pulsed) 50us 40 10 Collector Current, I C [A] Collector Current, IC [A] Ic MAX. (Continuous) 1㎳ 100us 10 1 DC Operation 0.1 Single Nonrepetitive Pulse TC = 25 ℃ Curves must be derated linearly with increase in temperature 1 10 100 1000 0.01 0.1 1 1 Safe Operating Area VGE = 20V, TC = 100℃ 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristic Fig 16. Turn-Off SOA Characteristics 10 Thermal Response, Zthjc [℃/W] 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 10 -5 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGP5N60RUF Rev. A1 SGP5N60RUF Package Dimension TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGP5N60RUF Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5