SGU2N60UFD

SGU2N60UFD IGBT SGU2N60UFD Ultra-Fast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • • • • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A High input impedance CO-PAK, IGBT with FRD : trr = 45ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G GC E I-PAK TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ T C = 2 5° C @ TC = 100°C @ TC = 100°C @ T C = 2 5° C @ TC = 100°C SGU2N60UFD 600 ± 20 2.4 1.2 10 1.5 12 25 10 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 5.0 5.0 110 Units °C/W °C/W °C/W ©2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1 SGU2N60UFD Electrical Characteristics of the IGBT T Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 1.2mA, VCE = VGE IC = 1.2A, VGE = 15V IC = 2.4A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---98 18 4 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 20 80 95 30 13 43 19 24 115 176 36 27 63 9 3 1.5 7.5 --130 160 --70 --200 250 --100 14 5 3 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 1.2A, VGE = 15V Measured 5mm from PKG = 25°C unless otherwise noted Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C I F = 2A Test Conditions T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C Min. --------- Typ. 1.4 1.3 45 75 1.5 2.5 60 120 Max. 1.7 -80 -3.0 -135 -- Units V ns A nC IF = 2A, di/dt = 200A/us T C = 2 5° C TC = 100°C T C = 2 5° C TC = 100°C ©2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1 SGU2N60UFD 12 Common Emitter T C = 25℃ 10 20V 6 Common Emitter VGE = 15V T C = 2 5℃ TC = 125℃ 5 15V Collector Current, IC [A] 8 12V Collector Current, IC [A] 8 4 6 3 VGE = 1 0V 4 2 2 1 0 0 2 4 6 0 0.5 1 10 Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 4 3.0 Common Emitter V GE = 1 5V 2.5 2.4A Collector - Emitter Voltage, VCE [V] V CC = 300V Load Current : peak of square wave 3 Load Current [A] 2.0 1.2A 2 IC = 0 .6A 1 1.5 1.0 0.5 0 0 30 60 90 120 150 0.0 Duty cycle : 50% TC = 100℃ Power Dissipation = 4W 0.1 1 10 100 1000 Case Temperature, TC [℃ ] Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter T C = 25℃ 16 20 Common Emitter TC = 1 25 ℃ Collector - Emitter Voltage, VC E [V] Collector - Emitter Voltage, VCE [V] 16 12 12 8 8 2.4A 4 IC = 0 .6A 0 1.2A 4 IC = 0 .6A 0 0 4 1.2A 2.4A 8 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE SGU2N60UFD Rev. A1 SGU2N60UFD 160 Common Emitter V GE = 0 V, f = 1MHz T C = 25℃ 120 Cies 100 Common Emitter V CC = 3 00V, VGE = ± 15V IC = 1 .2A T C = 25 ℃ T C = 1 25 ℃ Capacitance [pF] 80 Coes 40 Cres 0 1 10 30 Switching Time [ns] T on Tr 10 10 100 500 Collector - Emitter Voltage, V CE [V] Gate Resistance, R G [Ω ] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 600 Switching Time [ns] Common Emitter V CC = 3 00V, V GE = ± 15V IC = 1 .2A T C = 2 5℃ T C = 1 25℃ 100 Common Emitter VCC = 3 00V, VGE = ± 15V IC = 1 .2A T C = 25℃ TC = 1 25℃ Toff Switching Loss [uJ] Eon Eoff Tf Toff 100 Eoff 10 Tf 50 10 100 500 5 10 100 500 Gate Resistance, RG [Ω ] Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 100 Common Emitter V CC = 300V, V GE = ± 15V RG = 200Ω TC = 2 5 ℃ TC = 125 ℃ 1000 Common Emitter VCC = 300V, VGE = ± 15V RG = 200 Ω T C = 25 ℃ TC = 125 ℃ Toff Toff Tf Tf Switching Time [ns] Ton Switching Time [ns] 100 1.5 2.0 2.5 0.5 Tr 10 0.5 1.0 1.0 1.5 2.0 2.5 Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2002 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current SGU2N60UFD Rev. A1 SGU2N60UFD 100 Common Emitter V CC = 300V, VGE = ± 15V RG = 200 Ω T C = 25℃ T C = 125 ℃ 15 Common Emitter RL = 2 50 Ω Tc = 25℃ Gate - Emitter Voltage, VGE [ V ] 12 Switching Loss [uJ] 9 3 00 V 6 V CE = 1 00 V 3 200 V Eon Eon Eoff 10 Eoff 0.5 1.0 1.5 2.0 2.5 0 0 2 4 6 8 10 Collector Current, IC [A] Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 30 IC M AX. (Pulsed) 10 50us 20 10 Collector Current, I C [A] 100us IC M AX. (Continuous) 1 DC Operation 1㎳ Collector Current, IC [A] 1 0.1 0.01 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000 Safe Operating Area VGE =20V, TC=100 C 0.1 1 10 100 1000 o Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 10 Thermal Response, Zthjc [℃/W] 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Pdm t1 1 single pulse t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1 SGU2N60UFD 30 T C = 25 ℃ TC = 1 00 ℃ 10 V R = 200V IF = 2A T C = 2 5℃ T C = 100℃ 10 1 0.1 0 1 2 3 Reverse Recovery Current, Irr [A] 1 100 Forward Current, I F [A] 500 F orward Voltage Drop, VFM [V] di/dt [A/us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 120 100 V R = 2 00V IF = 2 A T C = 25 ℃ T C = 1 00 ℃ V R = 2 00V IF = 2 A T C = 25 ℃ TC = 1 00 ℃ Stored Recovery Charge, Qrr [nC] 80 Reverce Recovery Time, t rr [ns] 100 80 60 60 40 40 20 20 0 100 500 0 100 500 di/dt [A/us] di/dt [A/us] Fig 20. Stored Charge Fig 21. Reverse Recovery Time ©2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1 SGU2N60UFD Package Dimension I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 0.60 ±0.20 0.70 ±0.20 0.80 ±0.10 6.10 ±0.20 1.80 ±0.20 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation SGU2N60UFD Rev. A1 16.10 ±0.30 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. H5