Pressure
Freescale Semiconductor Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
The MPVZ5150 series piezoresistive transducer is a state-of-the-art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs. This patented, single element transducer combines advanced micromachining techniques, thin-film metallization, and bipolar processing to provide an accurate, high level analog output signal that is proportional to the applied pressure.
MPVZ5150 Rev 1, 05/2010
MPVZ5150 Series
0 to 150 kPa (0 to 21.75 psi) 0.2 to 4.7 V Output
Typical Applications
• • • • Level Indicators Process Control Pump/Motor Control Pressure Switching
Features
• • • • • 2.5% Maximum Error over 0° to 85°C Ideally suited for Microprocessor or Microcontroller-Based Systems Patented Silicon Shear Stress Strain Gauge Available in Gauge Surface Mount (SMT) or Through Hole (DIP) Configurations Increased media compatibility ORDERING INFORMATION
# of Ports Package Case Device Name Options No. None Single Small Outline Package (Media Resistant Gel) (MPVZ5150 Series) MPVZ5150GC6T1 MPVZ5150GC7U Tape & Reel Rail 482A 482C • • Dual Gauge • •
Pressure Type Differential Absolute
Device Marking MPVZ5150G MPVZ5150G
SMALL OUTLINE PACKAGES
MPVZ5150GC6T1 CASE 482A
MPVZ5150GC7U CASE 482C
© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
Pressure
Operating Characteristics
Table 1. Operating Characteristics (VS = 5.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2. Decoupling circuit shown in Figure 3 required to meet electrical specifications.)
Characteristic Pressure Range(1) Supply Voltage(2) Supply Current Minimum Pressure Offset(3) @ VS = 5.0 V Full Scale Output(4) @ VS = 5.0 V Full Scale Span(5) @ VS = 5.0 V Accuracy(6) Sensitivity Response Time(7) (0 to 85°C) Symbol POP VS IO VOFF VFSO VFSS — V/P tR IO+ — — — — — — — 30 1.0 0.1 20 ±0.5 — — — — — mV/kPa ms mAdc ms %VFSS Min 0 4.75 — 0.088 Typ — 5.0 7.0 0.200 Max 150 5.25 10 0.313 Unit kPa VDC mAdc VDC VDC VDC
Differential and Absolute (0 to 85°C)
4.588
4.700
4.813
Differential and Absolute (0 to 85°C)
—
4.500
—
Output Source Current at Full Scale Output Warm-Up Time(8) Offset Stability(9) 1. 2. 3. 4. 5. 6.
7. 8. 9.
1 kPa (kiloPascal) equals 0.145 PSI. Device is ratiometric within this specified excitation range. Offset (VOFF) is defined as the output voltage at the minimum rated pressure. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. Accuracy (error budget) consists of the following: Linearity: Output deviation from a straight line relationship with pressure over the specified pressure range. Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temperature points, with zero differential pressure applied. Pressure Hysteresis: Output deviation at any pressure within the specified range, when this pressure is cycled to and from minimum or maximum rated pressure at 25°C. TcSpan: Output deviation over the temperature range of 0° to 85°C, relative to 25°C. TcOffset: Output deviation with minimum pressure applied over the temperature range of 0° to 85°C, relative to 25°C. Variation from Nominal: The variation from nominal values, for Offset or Full Scale Span, as a percent of VFSS at 25°C. Response Time is defined as the time for the incremental changed in the output to go from 10% to 90% of its final value when subjected to a specified step change in pressure. Warm-Up Time is defined as the time required for the product to meet the specified output voltage after the Pressure has been stabilized. Offset Stability is the product’s output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
MPVZ5150 2 Sensors Freescale Semiconductor
Pressure
Maximum Ratings
Table 2. Maximum Ratings(1)
Rating Maximum Pressure (P1 > P2) Storage Temperature Operating Temperature Symbol PMAX TSTG TA Value 400 -40° to +125°C -40° to +125°C Unit kPa °C °C
1.Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.
VS 2
Sensing Element
Thin Film Temperature Compensation and Gain Stage # 1 3 GND
Gain Stage # 2 and Ground Reference Shift Circuitry
4
VOUT
Pins 1 and 5 through 8 are NO CONNECTS
Figure 1. Fully Integrated Pressure Sensor Schematic
MPVZ5150 Sensors Freescale Semiconductor 3
Pressure
On-chip Temperature Compensation and Calibration
Figure 2 illustrates the Differential/Gauge Sensing Chip in the basic chip carrier (Case 867). A fluorosilicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the sensor diaphragm. The MPVZ5150 series pressure sensor operating characteristics, and internal reliability and qualification tests are based on use of dry air as the pressure media. Media, other than dry air, may have adverse effects on sensor performance and long-term reliability. Contact the factory for information regarding media compatibility in your application. Figure 4 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0° to 85°C using the decoupling circuit shown in Figure 3. The output will saturate outside of the specified pressure range. Figure 3 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended.
Gel Die Coat P1 Wire Bond
Die
Stainless Steel Cap
+5 V
Thermoplastic Case Vs
Vout
OUTPUT
Lead Frame 1.0 μF P2 Differential Sensing Element Die Bond 0.01 μF
IPS GND 470 pF
Figure 2. Cross-Sectional Diagram (not to scale)
Figure 3. Recommended Power Supply Decoupling and Output Filtering (For additional output filtering, please refer to Application Note AN1646)
5 4 Output Voltabe (V) 3 2 1 0
Vout = VS*(0.006*P(kPa)+0.04) ± (PE * TM * 0.006 * Vs) VS = 5.0 V ± 0.25 Vdc PE = 3.75 kPa TM = 1 @ 0 to 85°C TM = 3 @ +125°C TM = 3 @ -40°C Vs = 5.0 V +/- 0.25 Vdc
Span Range (Typ) 150
MAX TYP
MIN
90
105
120
Pressure (kPa)
135
0
15
30
45
60
75
(Typ) Offset
Figure 4. Output vs. Pressure Differential
MPVZ5150 4 Sensors Freescale Semiconductor
Output Range (Typ)
Pressure
Transfer Function (MPVZ5150 Series) Nominal Transfer Value: VOUT = VS x (0.006 x P (kPa) + 0.04) ± (Pressure Error x Temp. Mult. x 0.006 x VS) VS = 5.0 V ± 0.25 Vdc
Temperature Error Multiplier MPVZ5150 Series
Break Points 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 Temperature in °C 80 100 120 140 Temp - 40 0 to 85°C +125° Multiplier 3 1 3
Note: The Temperature Multiplier is a linear response from 0° to -40°C and from 85° to 125°C.
Pressure Error Band
MPVZ5150 Series
Error Limits for Pressure 4.0 3.0 2.0 Error (kPa) 1.0 0.0 -1.0 -2.0 -3.0 -4.0 Pressure 0 to 150 kPa Error (max) ± 3.75 kPa 0
25
50
75
100
125
150
Pressure in kPa
MPVZ5150 Sensors Freescale Semiconductor 5
Pressure
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE
Freescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing fluorosilicone gel which protects the die from harsh media. The MPX pressure
Part Number MPVZ5150GC6T1 MPVZ5150GC7U
sensor is designed to operate with positive differential pressure applied, P1 > P2. The Pressure (P1) side may be identified by using the table below:
Case Type 482A 482C Pressure (P1) Side Identifier Side with Port Attached Side with Port Attached
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the surface mount packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct footprint, the packages will self align when subjected to a solder reflow process. It is always recommended to design boards with a solder mask layer to avoid bridging and shorting between solder.
Figure 5. Small Outline Package Footprint
MPVZ5150 6 Sensors Freescale Semiconductor
Pressure
PACKAGE DIMENSIONS
–A–
5 4
D 8 PL 0.25 (0.010)
M
TB
S
A
S
N –B–
8
G
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5 TYPICAL DRAFT. DIM A B C D G H J K M N S V W INCHES MIN MAX 0.415 0.425 0.415 0.425 0.500 0.520 0.038 0.042 0.100 BSC 0.002 0.010 0.009 0.011 0.061 0.071 0 7 0.444 0.448 0.709 0.725 0.245 0.255 0.115 0.125 MILLIMETERS MIN MAX 10.54 10.79 10.54 10.79 12.70 13.21 0.96 1.07 2.54 BSC 0.05 0.25 0.23 0.28 1.55 1.80 0 7 11.28 11.38 18.01 18.41 6.22 6.48 2.92 3.17
S
W
V C J K M
PIN 1 IDENTIFIER
H –T–
SEATING PLANE
CASE 482A-01 ISSUE A SMALL OUTLINE PACKAGE
–A–
5 4
N –B–
8
G
1
0.25 (0.010)
M
TB
D 8 PL SA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5 TYPICAL DRAFT. 6. DIMENSION S TO CENTER OF LEAD WHEN FORMED PARALLEL. S DIM A B C D G J K M N S V W SEATING PLANE INCHES MIN MAX 0.415 0.425 0.415 0.425 0.500 0.520 0.026 0.034 0.100 BSC 0.009 0.011 0.100 0.120 0 15 0.444 0.448 0.540 0.560 0.245 0.255 0.115 0.125 MILLIMETERS MIN MAX 10.54 10.79 10.54 10.79 12.70 13.21 0.66 0.864 2.54 BSC 0.23 0.28 2.54 3.05 0 15 11.28 11.38 13.72 14.22 6.22 6.48 2.92 3.17
S
DETAIL X W
V C
PIN 1 IDENTIFIER
–T– K M J DETAIL X
CASE 482C-03 ISSUE B SMALL OUTLINE PACKAGE
MPVZ5150 Sensors Freescale Semiconductor 7
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MPVZ5150 Rev. 1 05/2010