MRF19125

Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 24 Watts Avg. Power Gain — 13.6 dB Efficiency — 22% ACPR — - 51 dB IM3 — - 37.0 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 125 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19125R3 MRF19125SR3 1930- 1990 MHz, 125 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF191225R3 CASE 465C - 02, STYLE 1 NI - 880S MRF19125SR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 330 1.89 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.53 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF19125R3 MRF19125SR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 1300 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss — 5.4 — pF gfs VGS(th) VGS(Q) VDS(on) — 2 2.5 — 9 — 3.9 0.185 — 4 4.5 0.21 S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 — — — — — — 1 10 Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) 1. Part is internally matched both on input and output. (continued) Gps 12 13.5 — dB η 19 22 — % IM3 — - 37 - 35 dBc ACPR — - 51 - 47 dBc IRL — - 13 -9 dB MRF19125R3 MRF19125SR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz) Gps — 13.5 — dB Symbol Min Typ Max Unit η — 35 — % IMD — - 30 — dBc IRL — - 13 — dB P1dB — 130 — W MRF19125R3 MRF19125SR3 RF Device Data Freescale Semiconductor 3 VBIAS R1 + R2 C5 C4 C3 C2 C7 B1 R3 VSUPPLY + C8 + C9 L1 C10 C11 + C12 + C13 + C14 Z4 RF INPUT Z8 RF OUTPUT Z1 C1 Z2 Z3 DUT Z5 Z6 C6 Z7 Z1, Z7 Z2 Z3 Z4 Z5 Z6 Z8 0.500″ x 0.084″ Microstrip 1.105″ x 0.084″ Microstrip 0.360″ x 0.895″ Microstrip 0.920″ x 0.048″ Microstrip 0.605″ x 1.195″ Microstrip 0.800″ x 0.084″ Microstrip 0.660″ x 0.095″ Microstrip Board PCB 0.030″ Glass Teflon®, Keene GX - 0300- 55- 22, εr = 2.55 Etched Circuit Boards MRF19125 Rev. 5, CMR Figure 1. MRF19125R3(SR3) Test Circuit Schematic Table 5. MRF19125R3(SR3) Test Circuit Component Designations and Values Designators B1 C1 C2, C7 C3, C10 C4, C11 C5 C6 C8 C9, C12, C13, C14 L1 N1, N2 R1 R2 R3 Description Short Ferrite Bead, Fair Rite #2743019447 51 pF Chip Capacitor, ATC #100B510JCA500X 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 pF Chip Capacitor, ATC #100B100JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 1 Turn, #20 AWG, 0.100″ ID Type N Flange Mounts, Omni Spectra #3052 - 1648- 10 1.0 kΩ, 1/8 W Chip Resistor 220 kΩ, 1/8 W Chip Resistor 10 Ω, 1/8 W Chip Resistor MRF19125R3 MRF19125SR3 4 RF Device Data Freescale Semiconductor C2 R1 B1 R2 C5 C4 C1 C3 CUT OUT C7 C8 R3 C9 L1 C10 C11 C12 C13 C14 C6 MRF19125 Rev 5 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19125R3(SR3) Test Circuit Component Layout MRF19125R3 MRF19125SR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS Avg.) N−CDMA 40 G ps IM3 η ACPR −63 −70 VDD = 26 Vdc, IDQ = 1300 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) −28 −35 −42 −49 −56 IM3 (dBc), ACPR (dBc) −20 −30 −40 −50 −60 7th Order −70 η −80 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 5 11 VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz 100 kHz Tone Spacing 3rd Order 5th Order 17 41 35 29 23 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power −20 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 IDQ = 900 mA 1100 mA −45 1700 mA −50 1500 mA 1300 mA −55 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 24 22 IRL 20 18 16 14 12 Figure 4. Intermodulation Distortion Products versus Output Power η 0 −10 −20 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) IM3 ACPR G ps 1920 1930 1940 1950 1960 1970 1980 VDD = 26 Vdc Pout = 24 Watts (Avg.) IDQ = 1300 mA −30 −40 −50 −60 1990 2000 f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) 14 12 10 8 6 4 2 0 2 10 Pout, OUTPUT POWER (WATTS) 100 200 P in η VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz G ps 48 40 32 24 16 8 0 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 37 56 38 Figure 6. 2-Carrier N-CDMA Broadband Performance −27 IDQ = 1300 mA f = 1960 MHz 100 kHz Tone Spacing −28 −29 IMD 35 34 33 32 24 24.5 25 25.5 26 26.5 27 27.5 28 VDD, DRAIN SUPPLY (V) −30 −31 −32 −33 η 36 Figure 7. CW Performance MRF19125R3 MRF19125SR3 6 Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 14 IDQ = 1700 mA 1500 mA G ps , POWER GAIN (dB) 13.5 1300 mA 1100 mA G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) 40 35 30 IRL 25 20 15 10 1920 1930 1940 1950 VDD = 26 Vdc Pout = 125 W (PEP) IDQ = 1300 mA 100 kHz Tone Spacing −20 −25 IMD Gps 1960 1970 1980 −30 −35 1990 2000 η −5 −10 −15 13 900 mA VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 150 12.5 12 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power 1010 MTTF FACTOR (HOURS X AMPS2) Figure 10. Two-Tone Broadband Performance IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 −50 7th Order −55 100 1000 Df, TONE SPACING (kHz) 5000 VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz 5th Order 3rd Order 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 11. Intermodulation Distortion Products versus Two - Tone Tone Spacing Figure 12. MTTF Factor versus Junction Temperature MRF19125R3 MRF19125SR3 RF Device Data Freescale Semiconductor 7 N - CDMA TEST SIGNAL 0 −10 −20 −30 −40 (dB) −50 −60 −70 −80 −90 −100 −7.5 −ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW −IM3 @ 1.2288 MHz Integrated BW +IM3 @ 1.2288 MHz Integrated BW 1.2288 MHz Channel BW −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF19125R3 MRF19125SR3 8 RF Device Data Freescale Semiconductor f = 1930 MHz Zload f = 1990 MHz Zo = 10 Ω f = 1990 MHz Zsource f = 1930 MHz VDD = 26 V, IDQ = 1300 mA, Pout = 24 W (Avg.) f MHz 1930 1960 1990 Zsource Ω 1.43 - j5.01 1.51 - j4.88 1.56 - j4.93 Zload Ω 0.75 - j0.93 0.71 - j0.89 0.68 - j1.02 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF19125R3 MRF19125SR3 RF Device Data Freescale Semiconductor 9 NOTES MRF19125R3 MRF19125SR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF Q bbb M TA M B M (FLANGE) 3 B K D TA 2 bbb M M B M M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B DIM A B C D E F G H K M N Q R S aaa bbb ccc F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465B - 03 ISSUE D NI - 880 MRF19125R3 B 1 (FLANGE) B K D TA 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M bbb M B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF M bbb ccc H C M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M F E A (FLANGE) T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF19125SR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF19125R3 MRF19125SR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19125R3 MRF19125SR3 12 Document Number: Document Number: MRF19125 Rev. 6, 4/2006 RF Device Data Freescale Semiconductor