MRF21045LR3

Freescale Semiconductor Technical Data Document Number: MRF21045 Rev. 11, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 10 Watts Avg. Efficiency — 23.5% Gain — 15 dB IM3 — - 37.5 dBc ACPR — - 41 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. MRF21045LR3 MRF21045LSR3 2110 - 2170 MHz, 45 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF21045LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF21045LSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 105 0.60 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 1.65 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF21045LR3 MRF21045LSR3 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz Bandwidth at f1 - 10 MHz and f2 +10 MHz.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz Bandwidth at f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 1. Part is internally matched both on input and output. (continued) Crss — 1.8 — pF VGS(th) VGS(Q) VDS(on) gfs 2 3 — — — 3.9 0.19 3 4 5 0.21 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Gps 13.5 15 — dB η 21 23.5 — % IM3 — - 37.5 - 35 dBc ACPR — - 41 - 38 dBc IRL — - 12 -9 dB MRF21045LR3 MRF21045LSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) — continued Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz) Gps — 14.9 — dB Symbol Min Typ Max Unit η — 36 — % IMD — - 30 — dBc IRL — - 12 — dB P1dB — 50 — W MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 3 VBIAS R1 + R2 C5 C4 C3 R3 B1 + C2 C7 C8 R4 VSUPPLY + C9 C10 C11 L1 Z5 RF INPUT Z10 RF OUTPUT Z1 C1 Z2 Z3 Z4 DUT Z6 Z7 Z8 C6 Z9 Z1, Z9 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 0.750″ x 0.084″ Transmission Line 0.160″ x 0.084″ Transmission Line 1.195″ x 0.176″ Transmission Line 0.125″ x 0.320″ Transmission Line 1.100″ x 0.045″ Transmission Line 0.442″ x 0.650″ Transmission Line 0.490″ x 0.140″ Transmission Line 0.540″ x 0.084″ Transmission Line 0.825″ x 0.055″ Transmission Line Board PCB 0.030″ Glass Teflon®, Keene GX - 0300- 55- 22, εr = 2.55 Etched Circuit Boards MRF21045 Rev. 3, CMR Figure 1. MRF21045LR3(SR3) Test Circuit Schematic Table 5. MRF21045LR3(SR3) Component Designations and Values Designators B1 C1, C2, C6 C7 C3, C9 C4, C10 C5 C8 C11 L1 N1, N2 R1 R2 R3, R4 Description Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 5.6 pF Chip Capacitor, ATC #100B5R6JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 22 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 1 Turn, #20 AWG, 0.100″ ID Type N Flange Mounts, Omni Spectra #3052 - 1648- 10 1.0 kΩ, 1/8 W Chip Resistor 180 kΩ, 1/8 W Chip Resistor 10 Ω, 1/8 W Chip Resistors MRF21045LR3 MRF21045LSR3 4 RF Device Data Freescale Semiconductor C8 C7 R1 B1 R3 C2 L1 C10 R4 C9 R2 C5 C4 C3 C11 C6 WB1 WB2 C1 MRF21045 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21045LR3(SR3) Test Circuit Component Layout MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 30 25 20 15 10 5 0 0.5 1 10 20 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA η VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) Gps −25 −30 −35 −40 −45 −50 ACPR −55 IM3 (dBc), ACPR (dBc) −25 −30 −35 −40 −45 3rd Order −50 5th Order −55 −60 −65 3 η 7th Order 4 6 8 10 VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 30 50 60 15 10 5 Pout, OUTPUT POWER (WATTS) PEP 20 45 40 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 35 30 25 IM3 Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) −25 −30 28 26 24 22 20 18 16 14 Figure 4. Intermodulation Distortion Products versus Output Power −10 IRL η VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IM3 ACPR Gps 2090 2110 2130 2150 2170 2190 −15 −20 −25 −30 −35 −40 −45 −35 IDQ = 300 mA 700 mA 600 mA −40 −45 400 mA 500 mA −50 4 6 8 10 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 30 50 60 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power 15.5 Gps 15 G ps , POWER GAIN (dB) 14.5 14 13.5 η 13 12.5 2 4 6 8 10 30 50 60 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc IDQ = 500 mA f = 2170 MHz 10 35 0 34 24 50 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 40 30 20 60 42 41 40 η Figure 6. 2 - Carrier W - CDMA Broadband Performance −24 −25 −26 IMD 39 38 37 36 IDQ = 500 mA Pout = 45 W (PEP) f1 = 2135 MHz, f2 = 2145 MHz 25 26 27 28 29 −27 −28 −29 −30 −31 −32 VDD, DRAIN SUPPLY (V) Figure 7. CW Performance Figure 8. Two - Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF21045LR3 MRF21045LSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 16 G ps , POWER GAIN (dB) IDQ = 700 mA 600 mA 15 500 mA 40 35 30 25 20 IMD −35 Gps 2090 2110 2130 2150 2170 −40 2190 15 IRL η VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 500 mA f1 = f − 5 MHz, f2 = f + 5 MHz −20 −25 −30 −10 −15 15.5 400 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 8 10 30 50 60 14.5 300 mA 14 4 6 10 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) PEP Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance W - CDMA TEST SIGNAL IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 −50 −55 0.1 1 Df, TONE SEPARATION (MHz) 10 30 7th Order 3rd Order VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 500 mA f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2 5th Order +20 +30 0 −10 (dB) −20 −30 −40 −50 −60 −70 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −15 −10 −5 0 5 10 3.84 MHz Channel BW +IM3 in 3.84 MHz BW 15 20 25 −80 −25 −20 f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 7 f = 2170 MHz Zload f = 2110 MHz f = 2110 MHz Zsource f = 2170 MHz Zo = 25 Ω VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz 2110 2140 2170 Zsource Ω 18.88 - j8.86 19.80 - j9.93 19.68 - j10.44 Zload Ω 3.11 - j4.18 3.09 - j3.87 3.12 - j3.72 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF21045LR3 MRF21045LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF21045LR3 MRF21045LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc M M Q M bbb B 3 TB M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC B TA M B M TA M B E M ccc C M TA M B M R (LID) F aaa M TA M B M M (INSULATOR) A T SEATING PLANE S (INSULATOR) aaa M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc TA M A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465E - 04 ISSUE F NI - 400 MRF21045LR3 2X D bbb M T A 1 M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF 2 2X K R C 3 (LID) ccc E M TA M B M N ccc M TA M B M (LID) F A (FLANGE) A T M SEATING PLANE H S (INSULATOR) aaa (FLANGE) M TA M B M (INSULATOR) B B aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF21045LSR3 MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF21045LR3 MRF21045LSR3 1Rev. 11, 5/2006 2 Document Number: MRF21045 RF Device Data Freescale Semiconductor