MRF5S9100NR1

Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB Drain Efficiency — 28% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9100NR1 MRF5S9100NBR1 880 MHz, 20 W AVG., 26 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S9100NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S9100NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, + 15 336 1.92 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 20 W CW Symbol RθJC Value (1,2) 0.52 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S9100NR1 MRF5S9100NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μA) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 950 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss Crss — — 70 2.2 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2 — — — 2.8 3.7 0.21 7 3.5 — 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part internally input matched. Gps ηD ACPR IRL 18 26 — — 19.5 28 - 46.8 - 19 — — - 45 -9 dB % dBc dB MRF5S9100NR1 MRF5S9100NBR1 2 RF Device Data Freescale Semiconductor B1 VBIAS + C22 + C21 + C20 C19 C18 L1 L2 C17 C16 + C15 VSUPPLY + C14 + C13 C6 RF INPUT DUT Z1 C1 Z2 Z3 C2 Z4 C3 Z5 C4 Z6 Z7 C5 Z8 Z9 C8 Z10 Z11 Z12 C10 Z13 Z14 C12 Z15 RF OUTPUT C7 C9 C11 Z1, Z15 Z2 Z3 Z4 Z5 Z6, Z11 Z7 0.200″ x 0.080″ Microstrip 0.105″ x 0.080″ Microstrip 0.954″ x 0.080″ Microstrip 0.115″ x 0.220″ Microstrip 0.375″ x 0.220″ Microstrip 0.200″ x 0.220″ x 0.620″ Taper 0.152″ x 0.620″ Microstrip Z8 Z9 Z10 Z12 Z13 Z14 PCB 0.163″ x 0.620″ Microstrip 0.238″ x 0.620″ Microstrip 0.077″ x 0.620″ Microstrip 0.381″ x 0.220″ Microstrip 0.114″ x 0.220″ Microstrip 1.052″ x 0.080″ Microstrip Arlon GX0300, 0.030″, εr = 2.55 Figure 1. MRF5S9100NR1(NBR1) Test Circuit Schematic Table 6. MRF5S9100NR1(NBR1) Test Circuit Component Designations and Values Part B1 C1, C12, C18 C2 C3, C11 C4 C5, C6 C7, C8 C9, C10 C13 C14, C15 C16, C17, C19 C20, C21 C22 L1 L2 Description Ferrite Bead, Surface Mount 18 pF Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 0.8 - 8.0 pF Variable Capacitors, Gigatrim 6.2 pF Chip Capacitor 12 pF Chip Capacitors 11 pF Chip Capacitors 5.1 pF Chip Capacitors 470 mF, 63 V Electrolytic Capacitor 22 mF, 50 V Tantalum Capacitors 0.56 mF, 50 V Chip Capacitors 47 mF, 16 V Tantalum Capacitors 100 mF, 50 V Electrolytic Capacitor 7.15 nH Inductor 22 nH Inductor Part Number 2743019447 100B180JP 500X 27271SL 27291SL 100B6R2JP 500X 100B120JP 500X 100B110JP 500X 100B5R1JP 500X NACZF471M63V T491X226K035AS C1825C564J5GAC T491D4T6K016AS 515D107M050BB6A 1606 - 7 B07T - 5 Manufacturer Fair - Rite ATC Johanson Dielectrics Johanson Dielectrics ATC ATC ATC ATC Nippon Kemet Kemet Kemet Multicomp CoilCraft CoilCraft MRF5S9100NR1 MRF5S9100NBR1 RF Device Data Freescale Semiconductor 3 C21 C20 C15 C14 VGG C22 C19 C16 C13 VDD C17 C10 C4 CUT OUT AREA L1 WB1 WB2 B1 C18 C1 C6 C8 C12 L2 C2 C3 C5 C9 C7 C11 MRF9100M Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S9100NR1(NBR1) Test Circuit Component Layout MRF5S9100NR1 MRF5S9100NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 22 20 G ps , POWER GAIN (dB) 18 16 14 12 10 8 6 830 840 ALT IRL ACPR Gps ηD VDD = 26 Vdc, Pout = 20 W (Avg.), IDQ = 950 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 50 40 30 20 −30 −40 −50 −60 850 860 870 880 890 900 910 −70 920 ηD , DRAIN EFFICIENCY (%) ACPR (dBc), ALT (dBc) −10 −15 −20 −25 −30 ηD , DRAIN EFFICIENCY (%) ACPR (dBc), ALT (dBc) −10 −15 −20 −25 −30 f, FREQUENCY (MHz) Figure 3. IS - 95 Broadband Performance @ Pout = 20 Watts Avg. 22 20 G ps , POWER GAIN (dB) 18 16 14 IRL 12 10 8 6 830 ALT 840 850 860 870 880 890 900 910 ACPR Gps ηD 10 8 6 VDD = 26 Vdc, Pout = 2 W (Avg.), IDQ = 950 mA N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 4 −40 −50 −60 −70 −80 920 f, FREQUENCY (MHz) Figure 4. IS - 95 Broadband Performance @ Pout = 2 Watts Avg. 21 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1425 mA 1150 mA 950 mA −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 0.1 1 700 mA VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements 10 100 1000 950 mA 1150 mA IDQ = 475 mA 1425 mA 20 G ps , POWER GAIN (dB) 19 700 mA 18 475 mA VDD = 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements 1 10 100 1000 17 16 0.1 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF5S9100NR1 MRF5S9100NBR1 RF Device Data Freescale Semiconductor 5 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 Pout, OUTPUT POWER (dBm) −10 −20 3rd Order −30 5th Order −40 −50 −60 −70 0.1 7th Order VDD = 26 Vdc, Pout = 96 W (PEP), IDQ = 950 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz 1 10 100 58 57 56 55 54 53 52 51 50 49 48 28 29 30 31 32 Actual VDD = 26 Vdc, IDQ = 950 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz 33 34 35 36 37 38 P1dB = 50.71 dBm (117 W) P3dB = 51.58 dBm (143 W) Ideal TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD , DRAIN EFFICIENCY (%) G , POWER GAIN (dB) ps 50 45 40 35 30 25 20 15 10 5 0 1 ηD ALT1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps ACPR VDD = 26 Vdc, IDQ = 950 mA, f = 880 MHz N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) Figure 8. Pulse CW Output Power versus Input Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBm) 140 160 −30 −35 −40 −45 −50 −55 −60 −65 −70 −75 −80 100 Figure 9. Single - Carrier N - CDMA ACPR, Power Gain, Efficiency and ALT1 versus Output Power 20 19.5 G ps , POWER GAIN (dB) 19 18.5 20 V 18 16 V 17.5 17 0 30 60 90 120 150 180 Pout, OUTPUT POWER (WATTS) CW VDD = 12 V 107 80 100 120 180 200 220 32 V 24 V MTTF FACTOR (HOURS x AMPS2) IDQ = 950 mA f = 880 MHz 1010 109 108 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 10. Power Gain versus Output Power Figure 11. MTTF Factor versus Junction Temperature MRF5S9100NR1 MRF5S9100NBR1 6 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK −TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 1.2288 MHz Channel BW .. ... ..... . .. .............................. ............ ............. . . .. . . . . . . . . . . . . . . . . . . −ALT1 in 30 kHz +ALT1 in 30 kHz . . . . Integrated BW Integrated BW .... . . . ............ ........... ...... .... ........ ..... ... . ....... ....... .. ... ....... . .... .... .. . . .. ......... ......... ... . ..... ...... ....... .. ..... . ..... ... ... . .... .... . ..... .... . ..... . .... ......... . .. .. . ...... .... ....... .. ........ −ACPR in 30 kHz +ACPR in 30 kHz .............. . . .. . . ... .... .......... ..... . ............... . ......... .... ........... Integrated BW Integrated BW .. ...... ............ . . ...... ... . .. .. ...... ....... ... Figure 12. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 13. Single - Carrier N - CDMA Spectrum MRF5S9100NR1 MRF5S9100NBR1 RF Device Data Freescale Semiconductor 7 f = 895 MHz Zload f = 865 MHz f = 895 MHz Zsource f = 865 MHz Zo = 5 Ω VDD = 26 Vdc, IDQ = 950 mA, Pout = 20 W Avg. f MHz 865 880 895 Zsource Ω 3.0 - j1.8 2.8 - j1.9 2.7 - j1.7 Zload Ω 1.4 - j0.7 1.5 - j0.6 1.5 - j0.5 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRF5S9100NR1 MRF5S9100NBR1 8 RF Device Data Freescale Semiconductor NOTES MRF5S9100NR1 MRF5S9100NBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF5S9100NR1 MRF5S9100NBR1 10 RF Device Data Freescale Semiconductor NOTES MRF5S9100NR1 MRF5S9100NBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e b1 aaa M C A 4X D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF5S9100NR1 MRF5S9100NBR1 12 RF Device Data Freescale Semiconductor ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S9100NR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF5S9100NR1 MRF5S9100NBR1 RF Device Data Freescale Semiconductor 13 MRF5S9100NR1 MRF5S9100NBR1 14 RF Device Data Freescale Semiconductor MRF5S9100NR1 MRF5S9100NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF5S9100NR1 MRF5S9100NBR1 1Rev. 5, 5/2006 6 Document Number: MRF5S9100N RF Device Data Freescale Semiconductor