MRF5S9101NBR1

Freescale Semiconductor Technical Data Document Number: MRF5S9101N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. GSM Application • Typical GSM Performance: VDD = 26 Volts, IDQ = 700 mA, Pout = 100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain - 17.5 dB Drain Efficiency - 60% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 650 mA, Pout = 50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz) Power Gain — 18 dB Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 2.3% rms • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9101NR1 MRF5S9101NBR1 869 - 960 MHz, 100 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S9101NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S9101NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +15 427 2.44 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 80°C, 50 W CW Symbol RθJC Value (1,2) 0.41 0.47 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S9101NR1 MRF5S9101NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW 1. Part internally input matched. (continued) Coss Crss — — 70 2.2 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2 — — — 2.8 3.7 0.21 7 3.5 — 0.3 — Vdc Vdc Vdc S Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, Pout = 100 W, IDQ = 700 mA, f = 960 MHz Gps ηD IRL P1dB 16 56 — 100 17.5 60 - 15 110 19 — -9 — dB % dB W MRF5S9101NR1 MRF5S9101NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, Pout = 50 W Avg., IDQ = 650 mA, 869 - 894 MHz, 920 - 960 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps ηD EVM SR1 SR2 — — — — — 18 42 2.3 - 63 - 78 — — — — — dB % % rms dBc dBc MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 3 Z11 VBIAS C1 R1 R2 C4 C7 Z13 R3 C16 RF INPUT DUT Z10 Z9 C19 C10 Z8 Z7 C17 Z1 C11 C12 C15 C18 C20 C13 Z2 C14 Z3 Z4 Z5 Z6 RF OUTPUT C8 C5 C2 + C21 VSUPPLY Z12 C9 C6 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.698″ 0.720″ 0.195″ 0.524″ 0.233″ 0.560″ 0.095″ 0.472″ 0.384″ x 0.827″ Microstrip x 0.788″ Microstrip x 0.087″ Microstrip x 0.087″ Microstrip x 0.087″ Microstrip x 0.087″ Microstrip x 0.827″ Microstrip x 0.087″ Microstrip x 0.087″ Microstrip Z10 Z11, Z12* Z13* PCB 1.491″ x 0.087″ Microstrip 1.6″ x 0.089″ Microstrip (quarter wave length for supply purpose) 1.2″ x 0.059″ Microstrip (quarter wave length for bias purpose) Taconic TLX8 - 0300, 0.030″, εr = 2.55 *Variable for tuning Figure 1. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Schematic Table 6. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Component Designations and Values Part C1, C2, C3 C4, C5, C6 C7, C8, C9 C10, C11 C12, C13 C14, C15, C16, C17 C18 C19 C20 C21 R1, R2 R3 Description 4.7 mF Chip Capacitors (2220) 10 nF 200B Chip Capacitors 33 pF 100B Chip Capacitors 22 pF 100B Chip Capacitors 10 pF 100B Chip Capacitors 8.2 pF 100B Chip Capacitors 5.6 pF 100B Chip Capacitor 4.7 pF 100B Chip Capacitor 3.9 pF 100B Chip Capacitor 220 mF, 50 V Electrolytic Capacitor, Axial 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistor (1206) Part Number GRM55ER7H475KA01 200B103MW 100B330JW 100B220GW 100B100GW 100B8R2CW 100B5R6CW 100B4R7BW 100B3R9BW 516D227M050NP7B Manufacturer Murata ATC ATC ATC ATC ATC ATC ATC ATC Sprague MRF5S9101NR1 MRF5S9101NBR1 4 RF Device Data Freescale Semiconductor C21 VGG C1 R1 C4 C7 R2 C8 C5 VDD C2 C10 C19 C17 CUT OUT AREA R3 C16 C13 C14 C11 C18 C12 C20 C15 C3 MRF5S9101N 900 MHz Rev 2 C9 C6 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S9101NR1(NBR1) 900 MHz Test Circuit Component Layout MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS - 900 MHz 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 IRL 11 10 860 880 900 920 940 960 980 1000 VDD = 26 Vdc IDQ = 700 mA Gps ηD 70 ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 60 50 40 30 0 −15 −30 −45 1020 f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts CW 19 18 G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 10 860 880 900 920 940 960 980 1000 IRL ηD VDD = 26 Vdc IDQ = 700 mA Gps 50 45 40 35 30 −8 −12 −16 −20 −24 1020 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts CW 19 IDQ = 1500 mA 18 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 19 VDD = 12 V 18 17 700 mA 1300 mA 17 16 500 mA 16 32 V 15 20 V 14 16 V 0 20 40 60 80 100 120 140 160 180 200 24 V 28 V 1100 mA 900 mA VDD = 26 Vdc f = 940 MHz 15 300 mA 14 1 10 100 1000 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power MRF5S9101NR1 MRF5S9101NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS - 900 MHz Gps 19 G ps , POWER GAIN (dB) 18 25_C 17 16 15 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) CW VDD = 26 Vdc IDQ = 700 mA f = 940 MHz 85_C ηD 40 30 20 10 TC = − 30_C TC = − 30_C 25_C 85_C EVM, ERROR VECTOR MAGNITUDE (% rms) 20 70 ηD, DRAIN EFFICIENCY (%) 60 50 3.5 3 2.5 2 40 W Avg. 1.5 1 0.5 0 900 910 920 930 940 950 960 970 980 f, FREQUENCY (MHz) 25 W Avg. VDD = 28 Vdc IDQ = 650 mA Pout = 50 W Avg. 0 1000 Figure 7. Power Gain and Drain Efficiency versus CW Output Power Figure 8. Error Vector Magnitude versus Frequency EVM, ERROR VECTOR MAGNITUDE (% rms) 9 8 6 5 ηD 3 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 EVM VDD = 28 Vdc IDQ = 650 mA f = 940 MHz 60 50 40 30 20 −30_C 10 0 TC = 85_C 25_C Figure 9. Error Vector Magnitude and Drain Efficiency versus Output Power SPECTRAL REGROWTH @ 400 kHz and 600 kHz (dBc) −63 SR @ 400 kHz Pout = 50 W Avg. SPECTRAL REGROWTH @ 400 kHz (dBc) −45 −50 −55 25_C −60 −65 −70 −75 −80 −30_C VDD = 28 Vdc IDQ = 650 mA f = 940 MHz TC = 85_C −68 25 W Avg. −73 SR @ 600 kHz 25 W Avg. 40 W Avg. 40 W Avg. −78 VDD = 28 Vdc IDQ = 650 mA f = 940 MHz −83 900 910 920 930 940 50 W Avg. 950 960 970 980 0 10 20 30 ηD, DRAIN EFFICIENCY (%) 40 50 60 70 80 90 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency Figure 11. Spectral Regrowth at 400 kHz versus Output Power MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS - 900 MHz SPECTRAL REGROWTH @ 600 kHz (dBc) −65 VDD = 28 Vdc IDQ = 650 mA f = 940 MHz 25_C −75 −30_C −80 TC = 85_C −70 −85 0 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) AVG. Figure 12. Spectral Regrowth @ 600 kHz versus Output Power 1.E+10 MTTF FACTOR (HOURS X AMPS2) 1.E+09 1.E+08 1.E+07 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature GSM TEST SIGNAL −10 −20 −30 −40 −50 (dB) −60 −70 −80 −90 −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz Figure 14. EDGE Spectrum MRF5S9101NR1 MRF5S9101NBR1 8 RF Device Data Freescale Semiconductor Z12 VBIAS C1 R1 R2 C4 C7 Z14 R3 C16 RF INPUT DUT Z11 Z10 C19 C10 Z9 Z8 C22 Z7 C17 Z1 C11 C12 C15 C18 C20 C13 Z2 C14 Z3 Z4 Z5 Z6 RF OUTPUT C8 C5 C2 + C21 VSUPPLY Z13 C9 C6 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.432″ 0.720″ 0.195″ 0.584″ 0.173″ 0.560″ 0.378″ 0.279″ 0.193″ x 0.827″ x 0.788″ x 0.087″ x 0.087″ x 0.087″ x 0.087″ x 0.827″ x 0.087″ x 0.087″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z10 Z11 Z12, Z13* Z14* PCB 0.897″ x 0.087″ Microstrip 1.161″ x 0.087″ Microstrip 1.6″ x 0.089″ Microstrip (quarter wave length for supply purpose) 1.2″ x 0.059″ Microstrip (quarter wave length for bias purpose) Taconic TLX8 - 0300, 0.030″, εr = 2.55 *Variable for tuning Figure 15. MRF5S9101NR1(NBR1) 800 MHz Test Circuit Schematic Table 7. MRF5S9101NR1(NBR1) 800 MHz Test Circuit Component Designations and Values Part C1, C2, C3 C4, C5, C6 C7, C8, C9 C10, C11 C12, C13, C17 C14, C15 C16, C22 C18 C19, C20 C21 R1, R2 R3 Description 4.7 mF Chip Capacitors (2220) 10 nF 200B Chip Capacitors 33 pF 100B Chip Capacitors 22 pF 100B Chip Capacitors 10 pF 100B Chip Capacitors 8.2 pF 100B Chip Capacitors 6.8 pF 100B Chip Capacitors 5.6 pF 100B Chip Capacitor 2.7 pF 100B Chip Capacitors 220 mF, 50 V Electrolytic Capacitor, Axial 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistor (1206) Part Number GRM55ER7H475KA01 200B103MW 100B330JW 100B220GW 100B100GW 100B8R2CW 100B6R8CW 100B5R6CW 100B2R7BW 516D227M050NP7B Manufacturer Murata ATC ATC ATC ATC ATC ATC ATC ATC Sprague MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 9 C21 VGG C1 R1 R2 C4 C7 C8 C5 VDD C2 R3 C10 C16 CUT OUT AREA C13 C14 C18 C20 C11 C22 C17 C12 C15 C3 C19 MRF5S9101N 800 MHz Rev 2 C9 C6 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 16. MRF5S9101NR1(NBR1) 800 MHz Test Circuit Component Layout MRF5S9101NR1 MRF5S9101NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS - 800 MHz 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 11 IRL VDD = 26 Vdc IDQ = 700 mA Gps ηD 65 ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 60 55 50 45 −10 −12 −14 −16 −18 10 −20 820 830 840 850 860 870 880 890 900 910 920 930 940 f, FREQUENCY (MHz) Figure 17. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 W CW 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 11 IRL VDD = 26 Vdc IDQ = 700 mA Gps ηD 45 40 35 30 25 −10 −12 −14 −16 −18 10 −20 820 830 840 850 860 870 880 890 900 910 920 930 940 f, FREQUENCY (MHz) Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 W CW 3.5 3 2.5 Pout = 50 W Avg. 2 1.5 1 0.5 0 850 860 870 880 890 900 910 f, FREQUENCY (MHz) VDD = 28 Vdc IDQ = 650 mA 40 W Avg. 25 W Avg. 9 8 6 η 5 TC = 25_C 3 EVM 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 20 30 VDD = 28 Vdc IDQ = 650 mA f = 880 MHz 60 50 40 η, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% rms) Figure 19. Error Vector Magnitude versus Frequency EVM, ERROR VECTOR MAGNITUDE (% rms) Figure 20. Error Vector Magnitude and Drain Efficiency versus Output Power MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 11 TYPICAL CHARACTERISTICS - 800 MHz SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) −45 Pout = 50 W Avg. 40 W Avg. SR @ 400 kHz 25 W Avg. SPECTRAL REGROWTH @ 400 kHz (dBc) −64 −66 −68 −70 −72 −74 −76 −78 −80 −82 850 40 W Avg. 860 870 880 890 900 910 25 W Avg. Pout = 50 W Avg. SR @ 600 kHz VDD = 28 Vdc IDQ = 650 mA −50 TC = 25_C −55 −60 −65 −70 −75 −80 0 10 20 30 40 50 60 70 80 90 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc IDQ = 650 mA f = 880 MHz Figure 21. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency Figure 22. Spectral Regrowth at 400 kHz versus Output Power −65 SPECTRAL REGROWTH @ 400 kHz (dBc) VDD = 28 Vdc IDQ = 650 mA f = 880 MHz −70 −75 TC = 25_C −80 −85 0 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) AVG. Figure 23. Spectral Regrowth at 600 kHz versus Output Power MRF5S9101NR1 MRF5S9101NBR1 12 RF Device Data Freescale Semiconductor f = 990 MHz f = 845 MHz Zload f = 845 MHz Zsource f = 990 MHz Zo = 5 Ω VDD = 26 Vdc, IDQ = 700 mA, Pout = 100 W CW f MHz 845 865 890 920 960 990 Zsource Ω 4.29 - j2.23 3.94 - j1.24 2.72 - j0.96 1.96 - j1.02 1.58 - j1.43 1.27 - j1.54 Zload Ω 1.15 - j0.04 1.05 - j0.10 1.02 - j0.07 1.03 - j0.15 1.03 - j0.05 0.73 - j0.07 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 24. Series Equivalent Source and Load Impedance MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 13 NOTES MRF5S9101NR1 MRF5S9101NBR1 14 RF Device Data Freescale Semiconductor NOTES MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e b1 aaa M C A 4X D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF5S9101NR1 MRF5S9101NBR1 16 RF Device Data Freescale Semiconductor ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S9101NR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 17 MRF5S9101NR1 MRF5S9101NBR1 18 RF Device Data Freescale Semiconductor MRF5S9101NR1 MRF5S9101NBR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF5S9101NR1 MRF5S9101NBR1 2Rev. 4, 5/2006 0 Document Number: MRF5S9101N RF Device Data Freescale Semiconductor