MRF6S20010NR1

Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. • Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain — 15.5 dB Drain Efficiency — 36% IMD — - 34 dBc • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130 - 2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain — 15.5 dB Drain Efficiency — 15% IM3 @ 10 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 49 dBc in 3.84 MHz Channel Bandwidth • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930 - 1990 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency— 16% ACPR @ 885 kHz Offset = - 60 dBc in 30 kHz Bandwidth • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805 - 1880 MHz) Power Gain — 16 dB Drain Efficiency — 33% EVM — 1.3% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S20010NR1 MRF6S20010GNR1 1600 - 2200 MHz, 10 W, 28 V GSM/GSM EDGE SINGLE N - CDMA 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6S20010NR1 CASE 1265A - 02, STYLE 1 TO - 270 - 2 GULL PLASTIC MRF6S20010GNR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +175 200 Unit Vdc Vdc °C °C © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor 1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78°C, 1 W CW Case Temperature 79°C, 10 W PEP, Two - Tone Test Symbol RθJC Value (1,2) 2.5 5.9 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 130 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.4 Adc) Dynamic Characteristics(3) Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 0.12 0.02 11.6 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 2 — 2.2 2.8 0.33 3.5 4 0.4 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz, f2 = 2170.1 MHz, Two - Tone Test Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps ηD IMD IRL 14 33 — — 15.5 36 - 34 - 15 17 — - 28 -9 dB % dBc dB 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. 3. Part internally matched on input. (continued) MRF6S20010NR1 MRF6S20010GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical 2 - Carrier W - CDMA Performances (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW Intermodulation Distortion Adjacent Channel Power Ratio Gps ηD GF IM3 ACPR — — — — — 15.5 15 0.3 - 47 - 49 — — — — — dB % dB dBc dBc Typical N - CDMA Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., 1930 MHz