MRF6S21060NBR1

Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 4, 12/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 14 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S21060NR1 MRF6S21060NBR1 2110 - 2170 MHz, 14 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S21060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S21060NBR1 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 60 W CW Case Temperature 76°C, 14 W CW Symbol RθJC Value (1,2) 0.89 1.04 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 610 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) 1.5 2 — 2.2 2.8 0.3 2.5 4 — Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 13.5 24.5 — — — 15.5 26 - 37 - 40 - 14 16.5 — - 35 - 38 - 10 dB % dBc dBc dB MRF6S21060NR1 MRF6S21060NBR1 2 RF Device Data Freescale Semiconductor R1 VBIAS R2 C6 C1 C2 Z6 Z15 RF INPUT R3 Z1 C7 Z2 Z3 Z4 Z5 Z7 Z16 DUT VSUPPLY C9 C10 C11 Z8 Z9 Z10 Z11 Z12 Z13 C8 Z14 C3 C4 C5 RF OUTPUT VSUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.250″ x 0.080″ Microstrip 0.860″ x 0.080″ Microstrip 0.300″ x 0.405″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 0.755″ Microstrip 0.115″ x 1.000″ Microstrip 0.240″ x 1.000″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB 0.270″ x 0.300″ Microstrip 0.230″ x 0.080″ Microstrip 0.310″ x 0.300″ Microstrip 0.830″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 1.000″ x 0.080″ Microstrip 1.100″ x 0.070″ Microstrip Arlon AD250, 0.030″, εr = 2.5 Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values Part C1 C2, C7 C3, C8, C9 C4, C5, C6, C10, C11 R1 R2 R3 Description 100 nF Chip Capacitor 4.7 pF Chip Capacitors 6.8 pF Chip Capacitors 10 μF, 35 V Chip Capacitors 1 kW, 1/4 W Chip Resistor 10 kW, 1/4 W Chip Resistor 10 W, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC100B4R7BT500XT ATC100B6R8BT500XT GRM55DR61H106KA88L CRCW12061000FKTA CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Kemet ATC ATC Murata Vishay Vishay Vishay MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 3 R1 C4 R2 C6 C1 C2 R3 CUT OUT AREA C3 C5 C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout MRF6S21060NR1 MRF6S21060NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 15.8 15.6 Gps, POWER GAIN (dB) 15.4 15.2 15 14.8 14.6 14.4 14.2 14 2060 2080 2100 IRL ACPR 2140 2160 2180 2200 VDD = 28 Vdc, Pout = 14 W (Avg.) IDQ = 610 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 ηD 28 27 26 Gps 25 24 −36 −38 −40 −42 −44 −46 2220 IM3 (dBc), ACPR (dBc) −5 −10 −15 −20 −25 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −6 −9 −12 −15 −18 −21 −24 IDQ = 305 mA IRL, INPUT RETURN LOSS (dB) 610 mA 100 200 763 mA 10 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) 2120 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 14 Watts Avg. 15.6 15.4 15.2 Gps, POWER GAIN (dB) 15 14.8 14.6 Gps ηD VDD = 28 Vdc, Pout = 28 W (Avg.) IDQ = 610 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 IRL ACPR 2080 2100 2120 2140 2160 2180 2200 39 38 37 36 −26 −28 −30 −32 −34 2220 14.4 14.2 14 2060 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg. 17 16 Gps, POWER GAIN (dB) 15 458 mA 14 305 mA 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing 763 mA 610 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 915 mA −10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing −20 −30 915 mA −40 −50 458 mA −60 1 Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz 57 55 Pout, OUTPUT POWER (dBm) 53 51 49 47 45 VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 28 30 32 34 36 38 40 P3dB = 49.986 dBm (99.68 W) P1dB = 49.252 dBm (84.18 W) Actual Ideal −20 −30 3rd Order −40 5th Order 7th Order −50 −60 0.1 43 1 TWO −TONE SPACING (MHz) 10 100 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 30 20 10 0 1 10 Gps Figure 8. Pulse CW Output Power versus Input Power 0 TC = − 30_C ηD IM3 −30_C ACPR −30_C 85_C −40 25_C −50 −60 100 200 25_C IM3 (dBc), ACPR (dBc) 85_C −10 VDD = 28 Vdc, IDQ = 610 mA f1 = 2135 MHz, f2 = 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 25_C −20 −30 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 TC = − 30_C 16 Gps, POWER GAIN (dB) 25_C 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW 100 200 VDD = 28 Vdc IDQ = 610 mA f = 2140 MHz 85_C ηD Gps 70 −30_C 60 Gps, POWER GAIN (dB) 25_C 50 85_C 40 30 20 10 0 ηD, DRAIN EFFICIENCY (%) 16 15 14 13 12 16 V 11 10 0 20 40 60 80 100 120 Pout, OUTPUT POWER (WATTS) CW VDD = 12 V 20 V 24 V 32 V IDQ = 610 mA f = 2140 MHz 28 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21060NR1 MRF6S21060NBR1 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS x AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK −TO−AVERAGE (dB) W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF +20 +30 0 −10 −20 −30 −40 −50 −60 −70 −80 −25 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −20 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω Zload f = 2110 MHz f = 2170 MHz f = 2110 MHz Zsource f = 2170 MHz VDD = 28 Vdc, IDQ = 610 mA, Pout = 14 W Avg. f MHz 2110 2140 2170 Zsource Ω 7.59 - j8.39 6.71 - j8.83 5.84 - j8.62 Zload Ω 3.31 - j5.35 3.17 - j5.16 3.06 - j4.92 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21060NR1 MRF6S21060NBR1 8 RF Device Data Freescale Semiconductor TD - SCDMA CHARACTERIZATION R1 VBIAS R2 C6 C1 C2 Z9 Z17 RF INPUT R3 Z1 C7 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z18 DUT VSUPPLY C9 C10 C11 Z10 Z11 Z12 Z13 Z14 Z15 C8 Z16 C3 C4 C5 RF OUTPUT VSUPPLY Z1 Z2 Z3* Z4 Z5* Z6 Z7 Z8 Z9 Z10 0.250″ x 0.080″ Microstrip 0.129″ x 0.080″ Microstrip 0.565″ x 0.258″ Microstrip 0.160″ x 0.080″ Microstrip 0.300″ x 0.455″ Microstrip 0.350″ x 0.080″ Microstrip 0.350″ x 0.755″ Microstrip 0.115″ x 0.755″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z11 Z12* Z13 Z14* Z15 Z16 Z17 Z18 PCB 0.240″ x 1.000″ Microstrip 0.270″ x 0.360″ Microstrip 0.230″ x 0.080″ Microstrip 0.588″ x 0.290″ Microstrip 0.595″ x 0.080″ Microstrip 0.200″ x 0.080″ Microstrip 0.935″ x 0.080″ Microstrip 0.955″ x 0.080″ Microstrip Arlon AD250, 0.030″, εr = 2.5 * Copper foil tape soldered onto PCB Figure 16. MRF6S21060NR1(NBR1) Test Circuit Schematic — TD - SCDMA Table 7. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values — TD - SCDMA Part C1 C2, C7 C3, C8, C9 C4, C5, C6, C10, C11 R1 R2 R3 Description 100 nF Chip Capacitor 4.7 pF Chip Capacitors 6.8 pF Chip Capacitors 10 μF, 35 V Chip Capacitors 1 kW, 1/4 W Chip Resistor 10 kW, 1/4 W Chip Resistor 10 W, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC100B4R7BT500XT ATC100B6R8BT500XT GRM55DR61H106KA88L CRCW12061000FKTA CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Kemet ATC ATC Murata Vishay Vishay Vishay MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 9 R1 C4 R2 C6 C1 C2 R3 CUT OUT AREA C3 C5 C7 C8 C9 C10 C11 MRF6S21060N Rev. 3 Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — TD - SCDMA MRF6S21060NR1 MRF6S21060NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 −10 ALT/ACPR (dBc) −20 −30 −40 −50 Alt−U −60 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) AVG. 0 Alt−L 3−Carrier TD−SCDMA VDD = 28 V, IDQ = 555 mA f = 2017.5 MHz ηD Adj −U Adj −L 30 25 20 15 10 5 ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) 1.28 MHz Channel BW Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power −18 6−Carrier TD−SCDMA VDD = 28 V, IDQ = 560 mA f = 2017.5 MHz 25 −26 ALT/ACPR (dBc) ηD 20 −34 Adj −U Adj −L −42 Alt−L −50 Alt−U −58 0.5 15 10 5 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD - SCDMA TEST SIGNAL −30 −40 −50 −60 −70 −80 −90 −100 −110 −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset 1.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 15 MHz −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset (dBm) (dBm) 1.28 MHz Channel BW −30 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −40 −50 −60 −70 −80 −90 −100 −110 −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset 2.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 25 MHz −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −130 Center 2.0175 GHz −130 Center 2.0175 GHz Figure 20. 3 - Carrier TD - SCDMA Spectrum Figure 21. 6 - Carrier TD - SCDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 11 Zo = 10 Ω Zload f = 2070 MHz f = 1950 MHz f = 2070 MHz Zin f = 1950 MHz VDD = 28 Vdc, IDQ = 560 mA f MHz 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 2060 2070 Zin Zin W 2.227 - j9.127 2.168 - j8.942 2.124 - j8.757 2.073 - j8.606 2.031 - j8.447 1.987 - j8.306 1.940 - j8.155 1.911 - j8.000 1.891 - j7.835 1.856 - j7.711 1.831 - j7.589 1.808 - j7.461 1.782 - j7.325 Zload W 3.341 - j8.372 3.239 - j8.218 3.168 - j8.084 3.083 - j7.966 3.009 - j7.865 2.929 - j7.743 2.845 - j7.639 2.775 - j7.529 2.696 - j7.410 2.615 - j7.309 2.549 - j7.207 2.479 - j7.086 2.422 - j6.983 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z in Z load Figure 22. Series Equivalent Input and Load Impedance — TD - SCDMA MRF6S21060NR1 MRF6S21060NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e b1 aaa M C A 4X D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 RF Device Data Freescale Semiconductor ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S21060NR1 STYLE 1: PIN 1. 2. 3. 4. 5. MRF6S21060NR1 MRF6S21060NBR1 13 MRF6S21060NR1 MRF6S21060NBR1 14 RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 15 MRF6S21060NR1 MRF6S21060NBR1 16 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 4 Date Dec. 2006 Description • Added “TD - SCDMA” to data sheet description, p. 1 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9 - 12 • Added Product Documentation and Revision History, p. 17 MRF6S21060NR1 MRF6S21060NBR1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6S21060NR1 MRF6S21060NBR1 1Rev. 4, 12/2006 8 Document Number: MRF6S21060N RF Device Data Freescale Semiconductor