MRF6S24140HR3

Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for large - signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain — 13.2 dB Drain Efficiency — 45% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S24140HR3 MRF6S24140HSR3 2450 MHz, 140 W, 28 V CW LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF6S24140HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF6S24140HSR3 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 82°C, 140 W CW Case Temperature 75°C, 28 W CW Symbol RθJC Value (2,3) 0.29 0.33 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. MRF6S24140HR3 MRF6S24140HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc nAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps ηD IM3 ACPR IRL 13 23 — — — 15.2 25 - 37 - 40 - 15 17 — - 35 - 38 — dB % dBc dBc dB MRF6S24140HR3 MRF6S24140HSR3 2 RF Device Data Freescale Semiconductor R1 VBIAS + C10 + C9 C8 B1 + C5 C15 C16 C17 C18 VSUPPLY C7 Z14 C3 Z8 Z6 Z5 Z15 Z7 DUT Z9 Z10 Z11 Z12 C2 Z13 RF OUTPUT RF INPUT Z1 C1 Z2 Z3 Z4 C4 C6 C12 + C14 + C13 C11 B2 C19 C20 C21 + C22 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 0.678″ 0.466″ 0.785″ 0.200″ 0.025″ 0.178″ 0.097″ x 0.068″ x 0.068″ x 0.200″ x 0.530″ x 0.530″ x 0.050″ x 1.170″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14, Z15 PCB 0.193″ x 1.170″ Microstrip 0.115″ x 0.550″ Microstrip 0.250″ x 0.110″ Microstrip 0.538″ x 0.068″ Microstrip 0.957″ x 0.068″ Microstrip 0.673″ x 0.095″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 C1, C2, C3, C4, C5, C6 C7, C11 C8, C12, C15, C19 C9, C13 C10, C14 C16, C17, C20, C21 C18, C22 R1 Description 47 Ω, 100 MHz Short Ferrite Beads, Surface Mount 5.6 pF Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Capacitors 47 μF, 16 V Tantalum Capacitors 10 μF, 50 V Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 240 Ω, 1/4 W Chip Resistor Part Number 2743019447 ATC600B5R6BT500XT C1825C103J1RAC C1825C225J5RAC T491D226M025AT T491D476K016AT GRM55DR61H106KA88B 2222 - 150 - 95102 CRC12062400FKEA Manufacturer Fair - Rite ATC Kemet Kemet Kemet Kemet Murata Vishay Vishay MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor 3 C5 R1 + + B1 C17 C10 C9 C8* C7* C15 C16 C3 CUT OUT AREA C1 C4 C2 MRF6S24140H Rev. 1.0 C19 C20 C13 C12* * Stacked Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz MRF6S24140HR3 MRF6S24140HSR3 4 RF Device Data Freescale Semiconductor + + C14 B2 C11* C6 C21 C22 + + C18 TYPICAL CHARACTERISTICS — 2450 MHz 16 IDQ = 1200 mA f = 2450 MHz 15 Gps, POWER GAIN (dB) 30 V 14 Gps 30 VDD = 28 V 32 V ηD, DRAIN EFFICIENCY (%) ηD, DRAIN EFFICIENCY (%) 170 40 50 13 32 V ηD 11 1 10 28 V 100 30 V 20 12 10 0 500 Pout, OUTPUT POWER (WATTS) CW Figure 3. Power Gain and Drain Efficiency versus CW Output Power as a Function of VDD 14.5 Gps 14 Gps, POWER GAIN (dB) 13.5 13 12.5 12 ηD 11.5 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 V IDQ = 1200 mA f = 2450 MHz 50 40 30 20 10 0 60 Figure 4. Power Gain and Drain Efficiency versus CW Output Power 15 1400 mA Gps 14 Gps, POWER GAIN (dB) MTTF (HOURS) 100 300 1000 mA 13 1100 mA 1300 mA 106 1200 mA 107 12 VDD = 28 V f = 2450 MHz 105 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW 104 90 110 130 150 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 140 W CW, and ηD = 45%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 5. Power Gain and Drain Efficiency versus CW Output Power as a Function of Total IDQ Figure 6. MTTF versus Junction Temperature MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor 5 f = 2450 MHz Zsource Z o = 10 Ω Zload f = 2450 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 140 W CW f MHz 2450 Zsource W 4.55 + j4.9 Zload W 1.64 - j6.57 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 7. Series Equivalent Source and Load Impedance MRF6S24140HR3 MRF6S24140HSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G 4 1 2X Q bbb M TA M B M (FLANGE) 3 B K D TA 2 bbb M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF M bbb ccc H M (INSULATOR) R ccc M (LID) M (INSULATOR) M TA TA M B B M TA M B S N M M M (LID) aaa C M TA M B F E A (FLANGE) T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc CASE 465B - 03 ISSUE D NI - 880 MRF6S24140HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE B 1 (FLANGE) B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF K D TA 2 bbb M M B M M (INSULATOR) R ccc M (LID) M (INSULATOR) M bbb ccc H M TA TA M B B M TA TA M B S B N M M M (LID) aaa M M DIM A B C D E F H K M N R S aaa bbb ccc C F E A (FLANGE) STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE T A SEATING PLANE CASE 465C - 02 ISSUE D NI - 880S MRF6S24140HSR3 MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor 7 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Mar. 2007 Apr. 2008 • Initial Release of Data Sheet • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 Description MRF6S24140HR3 MRF6S24140HSR3 8 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MRF6S24140HR3 MRF6S24140HSR3 Document Number: RF Device Data MRF6S24140H Rev. 1, 4/2008 Freescale Semiconductor 9