MRF6S9045NR1

Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 350 mA, Pout = 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 22.7 dB Drain Efficiency — 32% ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 16 Watts Avg., Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 46% Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 68% • Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Integrated ESD Protection • N Suffix Indicates Lead - Free Terminations • 200°C Capable Plastic Package • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 880 MHz, 10 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265- 08, STYLE 1 TO - 270 - 2 PLASTIC MRF6S9045NR1(MR1) CASE 1337 - 03, STYLE 1 TO - 272 - 2 PLASTIC MRF6S9045NBR1(MBR1) Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, + 12 175 1.0 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 45 W CW Case Temperature 79°C, 10 W CW Symbol RθJC Value (1,2) 1.0 1.1 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µA) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 77 27 0.78 — — — pF pF pF VGS(th) VGS(Q) VDS(on) gfs 1 2 — — 2 2.9 0.22 4 3 4 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss MRF6S9045NR1(MR1) MRF6S9045NBR1(MBR1) Gps ηD ACPR IRL 21 30.5 — — - 20 - 20 -9 -7 22.7 32 - 47 25 — - 45 dB % dBc dB 1. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps ηD EVM SR1 SR2 — — — — — 20 46 1.5 - 62 - 78 — — — — — dB % % dBc dBc Typical CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 οhm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 45 W, f = 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Gps ηD IRL P1dB — — — — 20 68 - 12 52 — — — — dB % dB W MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 RF Device Data Freescale Semiconductor 3 B1 R1 VBIAS + C15 RF INPUT R2 L2 R3 C7 L1 Z10 C5 Z1 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.215″ 0.221″ 0.500″ 0.460″ 0.040″ 0.280″ 0.087″ 0.435″ 0.057″ x 0.065″ x 0.065″ x 0.100″ x 0.270″ x 0.270″ x 0.270″ x 0.525″ x 0.525″ x 0.525″ C3 C4 C6 Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C9 DUT C8 Z11 Z12 B2 + C10 C16 + C17 + VSUPPLY C18 RF Z16 OUTPUT C14 Z13 Z14 Z15 C11 C12 C13 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.530″ Taper Microstrip Microstrip Microstrip 0.360″ x 0.270″ Microstrip 0.063″ x 0.270″ Microstrip 0.360″ x 0.065″ Microstrip 0.095″ x 0.065″ Microstrip 0.800″ x 0.065″ Microstrip 0.260″ x 0.065″ Microstrip 0.325″ x 0.065″ Microstrip Taconic RF - 35 0.030″, εr = 3.5 Figure 1. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Schematic Table 6. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Designations and Values Part B1 B2 C1, C7, C10, C14 C2, C4, C12 C3 C5, C6 C8, C9 C11 C13 C15, C16, C17 C18 L1, L2 R1 R2 R3 Ferrite Bead Ferrite Bead 47 pF Chip Capacitors 0.8 - 8.0 pF Variable Capacitors, Gigatrim 15 pF Chip Capacitor 12 pF Chip Capacitors 13 pF Chip Capacitors 7.5 pF Chip Capacitor 0.6 - 4.5 pF Variable Capacitor, Gigatrim 10 µF, 35 V Tantalum Capacitors 220 µF, 50 V Electrolytic Capacitor 12.5 nH Inductor 1 kΩ Chip Resistor 560 kΩ Chip Resistor 12 Ω Chip Resistor Description Part Number 2743019447 2743021447 100B470JP500X 27291SL 100B150JP500X 100B120JP500X 100B130JP500X 100B7R5JP500X 27271SL T491D106K035AS 678D227M025CG3D A04T - 5 CRCW12061001F100 CRCW12065603F100 CRC120612R0F100 Manufacturer Fair Rite Fair Rite ATC Johanson ATC ATC ATC ATC Johanson Kemet Vishay Coilcraft Vishay Dale Vishay Dale Vishay Dale MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 4 RF Device Data Freescale Semiconductor C15 R2 R3 R1 C18 VDD C16 C17 B2 C7 C5 C8 C3 C6 CUT OUT AREA C4 C10 L2 VGG B1 L1 C1 C2 C14 C9 C11 C12 C13 TO−270/272 Surface / Bolt down Figure 2. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Layout MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −5 −10 −15 −20 −25 −30 ηD, DRAIN EFFICIENCY (%) −5 ACPR (dBc), ALT1 (dBc) −10 −15 −20 −25 −30 275 mA 350 mA −50 520 mA −60 −70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 475 mA 23 22.8 22.6 Gps, POWER GAIN (dB) 22.4 22.2 22 21.8 21.6 21.4 21.2 21 850 860 IRL ALT1 870 880 890 900 910 ACPR VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 350 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 Gps ηD 35 34 33 32 31 −45 −50 −55 −60 −65 −70 f, FREQUENCY (MHz) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 10 Watts Avg. 22.6 22.4 22.2 Gps, POWER GAIN (dB) 22 21.8 21.6 21.4 IRL 21.2 21 20.8 850 ALT1 860 870 Gps 48 ηD 47 46 −35 −40 −45 −50 −55 −60 ACPR 880 890 900 910 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 20 Watts Avg. 24 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 520 mA 23 Gps, POWER GAIN (dB) 475 mA 350 mA 22 275 mA 21 175 mA 20 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements, 100 kHz Tone Spacing 19 0.5 −10 −20 −30 IDQ = 175 mA −40 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two −Tone Measurements, 100 kHz Tone Spacing Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc, Pout = 20 W (Avg.) IDQ = 350 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 45 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 IMD, INTERMODULATION DISTORTION (dBc) −20 −30 −40 −50 −60 −70 −80 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 3rd Order 5th Order 7th Order VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz f2 = 880.1 MHz, Two −Tone Measurements Center Frequency = 880 MHz 0 −10 −20 −30 −40 −50 −60 7th Order 3rd Order VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 350 mA f1 = 880 MHz, f2 = 880.1 MHz, Two −Tone Measurements Center Frequency = 880 MHz 5th Order −70 0.05 0.1 1 10 100 TWO −TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power 54 53 Pout, OUTPUT POWER (dBm) 52 51 50 49 48 47 46 45 44 23 24 25 26 27 28 29 P1dB = 48.2 dBm (66.07 W) P3dB = 48.6 dBm (72.44 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing Ideal Actual VDD = 28 Vdc, IDQ = 350 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 880 MHz 30 31 32 33 Pin, INPUT POWER (dBm) Figure 9. Pulse CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 30 Gps 20 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. ACPR VDD = 28 Vdc, IDQ = 350 mA f = 880 MHz, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 25_C ALT1 TC = 25_C 85_C ηD −25 25_C −35 −30_C 85_C −45 −55 −30_C −65 −75 −85 50 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) 25_C Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 24 23 Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 1 ηD 25_C 85_C TC = − 30_C Gps −30_C 25_C 85_C 80 70 60 50 40 30 20 ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 350 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) CW 100 10 0 Figure 11. Power Gain and Drain Efficiency versus CW Output Power 23.5 23 22.5 22 21.5 21 20.5 20 19.5 19 VDD = 12 V 18.5 16 V 20 V 18 17.5 0 10 20 30 40 28 V 24 V IDQ = 350 mA f = 880 MHz 60 70 80 90 100 32 V Gps, POWER GAIN (dB) 50 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power 109 MTTF FACTOR (HOURS X AMPS2) 108 107 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 (dB) 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK −TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −110 −3.6 −2.9 −2.2 −1.5 1.2288 MHz Channel BW −ACPR @ 30 kHz Integrated BW +ACPR @ 30 kHz Integrated BW Figure 14. Single - Carrier CCDF N - CDMA −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 910 MHz f = 850 MHz Zsource Zload f = 850 MHz f = 910 MHz VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg. f MHz 850 865 880 895 910 Zsource Ω 0.42 + j0.30 0.42 + j0.44 0.45 + j0.60 0.48 + j0.74 0.50 + j0.85 Zload Ω 3.05 + j1.27 3.16 + j1.33 3.31 + j1.33 3.43 + j1.20 3.35 + j1.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 10 RF Device Data Freescale Semiconductor NOTES MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 RF Device Data Freescale Semiconductor 11 NOTES MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 12 RF Device Data Freescale Semiconductor NOTES MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS B E1 E4 aaa M 2X D3 2X PIN ONE ID DA NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −D−. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa INCHES MIN MAX .078 .082 .039 .043 .040 .042 .416 .424 .378 .382 .290 .320 .016 .024 .436 .444 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.98 2.08 0.99 1.09 1.02 1.07 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 11.07 11.28 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 0.64 BSC 4.90 5.06 0.18 0.28 0.10 D aaa M DA b1 2X D1 E A E5 E3 EXPOSED HEATSINK AREA PIN 1 PIN 2 D2 PIN 3 c1 H A1 A2 DATUM PLANE NOTE 7 MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 14 RF Device Data Freescale Semiconductor ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ BOTTOM VIEW F ZONE J A E2 E5 2X STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D CASE 1265 - 08 ISSUE H TO - 270- 2 PLASTIC MRF6S9045NR1(MR1) 2X aaa M r1 CAB DRAIN ID B E1 A GATE LEAD DRAIN LEAD D1 2X b1 aaa M CA D 2 E c1 H DATUM PLANE F ZONE "J" A A1 A2 7 Y E2 Y C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 5.05 4.90 .18 .28 1.60 1.73 .10 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1337 - 03 ISSUE C TO - 272- 2 PLASTIC MRF6S9045NBR1(MBR1) MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 RF Device Data Freescale Semiconductor 15 ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ ÉÉÉÉÉ E2 VIEW Y - Y PIN 3 1 NOTE 8 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2005. All rights reserved. MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1 1Rev. 1, 6/2005 6 Document Number: MRF6S9045 RF Device Data Freescale Semiconductor