MRF6S9160HSR3

Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.9 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 76 Watts Avg., Full Frequency Band (865 - 895 MHz) Power Gain — 20 dB Drain Efficiency — 45% Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM — 2% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 160 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 58% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S9160HR3 MRF6S9160HSR3 880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S9160HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S9160HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 565 3.2 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S9160HR3 MRF6S9160HSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 160 W CW Case Temperature 73°C, 35 W CW Symbol RθJC Value (1,2) 0.31 0.33 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 525 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 8 Adc) Dynamic Characteristics(3) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss Crss — — 80.2 2.2 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 1 2 0.1 — 2 3 0.2 9.7 3 4 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps ηD ACPR IRL 20 29 — — 20.9 30.5 - 46.8 - 17 23 — - 45 -9 dB % dBc dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched on input. (continued) MRF6S9160HR3 MRF6S9160HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 76 W Avg., 865 MHz