MRF6V14300HR3

Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 3, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.5% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-06, STYLE 1 NI-780 MRF6V14300HR3 CASE 465A-06, STYLE 1 NI-780S MRF6V14300HSR3 Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value --0.5, +100 --6.0, +10 -- 65 to +150 150 225 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle Symbol ZθJC Value (2,3) 0.13 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. MRF6V14300HR3 MRF6V14300HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 662 μAdc) Gate Quiescent Voltage (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.63 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss — — — 0.6 350 330 — — — pF pF pF VGS(th) VGS(Q) VDS(on) 0.9 1.5 — 1.6 2.4 0.26 2.4 3 — Vdc Vdc Vdc IGSS V(BR)DSS IDSS IDSS — 100 — — — — — — 10 — 50 2.5 μAdc Vdc μAdc mA Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps ηD IRL 16.5 59(2) — 18 60.5(2) --12 19.5 — --9 dB % dB Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle, tr = 50 ns Relative Insertion Phase Gain Flatness Pulse Amplitude Droop Harmonic 2nd and 3rd Spurious Response Load Mismatch Stability (VSWR = 3:1 at all Phase Angles) Load Mismatch Tolerance (VSWR = 5:1 at all Phase Angles) VSWR--S VSWR--T |∆Φ| GF Drp H2 & H3 — — — — — 10 0.5 0.3 --20 --65 — — — — — ° dB dB dBc dBc All Spurs Below --60 dBc No Degradation in Output Power 1. Part internally matched both on input and output. 2. Drain efficiency is calculated by: η = 100 × P out where: Ipeak = (IAVG -- IDQ) / Duty Cycle (%) + IDQ. D V DD × I peak MRF6V14300HR3 MRF6V14300HSR3 2 RF Device Data Freescale Semiconductor + C3 VBIAS R1 + C9 RF INPUT C8 Z22 Z13 Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 DUT Z14 Z15 Z16 Z17 C4 Z23 C5 C6 + C7 VSUPPLY Z18 Z19 Z20 C2 Z21 RF OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 0.205″ x 0.080″ Microstrip 0.721″ x 0.022″ Microstrip 0.080″ x 0.104″ Microstrip 0.128″ x 0.022″ Microstrip 0.062″ x 0.134″ Microstrip 0.440″ x 0.022″ Microstrip 0.262″ x 0.496″ Microstrip 0.030″ x 0.138″ Microstrip 0.256″ x 0.028″ Microstrip 0.058″ x 0.254″ Microstrip 0.344″ x 0.087″ Microstrip 0.110″ x 0.087″ Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 0.110″ x 0.866″ Microstrip 0.630″ x 0.866″ Microstrip 0.307″ x 0.470″ Microstrip 0.045″ x 0.221″ Microstrip 0.171″ x 0.136″ Microstrip 0.120″ x 0.430″ Microstrip 0.964″ x 0.136″ Microstrip 0.177″ x 0.078″ Microstrip 0.215″ x 0.078″ Microstrip 1.577″ x 0.070″ Microstrip 1.459″ x 0.070″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6V14300HR3(HSR3) Test Circuit Schematic Table 5. MRF6V14300HR3(HSR3) Test Circuit Component Designations and Values Part C1 C2 C3 C4 C5 C6 C7 C8 C9 R1 Description 43 pF Chip Capacitor 18 pF Chip Capacitor 33 pF Chip Capacitor 27 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 330 pF, 63 V Electrolytic Capacitor 0.1 μF, 35 V Chip Capacitor 10 μF, 35 V Tantalum Capacitor 10 Ω, 1/4 W Chip Resistor Part Number ATC100B430JT500XT ATC100B180JT500XT ATC100B330JT500XT ATC100B270JT500XT 2225X7R225KT3AB EMVY630GTR471MMH0S EMVY630GTR331MMH0S CDR33BX104AKYS T491D106K035AT CRCW120610R0FKEA Manufacturer ATC ATC ATC ATC ATC Multicomp Multicomp Kemet Kemet Vishay MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 3 C9 C4 R1 C3 C5 C6 C8 C7 C1 CUT OUT AREA C2 MRF6V14300 Rev. 1 Figure 2. MRF6V14300HR3(HSR3) Test Circuit Component Layout MRF6V14300HR3 MRF6V14300HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 Coss MAXIMUM OPERATING Tcase (°C) Ciss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) DUTY CYCLE (%) VDD = 50 Vdc, IDQ = 150 mA f = 1200 MHz, Pulse Width = 300 μsec Pout = 330 W Pout = 270 W Pout = 300 W C, CAPACITANCE (pF) 100 10 Crss 1 0.1 Figure 3. Capacitance versus Drain-Source Voltage 24 65 59 58 57 Gps, POWER GAIN (dB) 55 Gps 20 ηD 18 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 16 50 25 100 Pout, OUTPUT POWER (WATTS) PULSED 400 35 45 Pout, OUTPUT POWER (dBm) 22 ηD, DRAIN EFFICIENCY (%) 56 55 54 53 52 51 50 49 48 47 27 Figure 4. Safe Operating Area Ideal P3dB = 55.30 dBm (339 W) P1dB = 54.77 dBm (300 W) Actual VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 29 31 33 35 37 39 Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power 22 21 Gps, POWER GAIN (dB) IDQ = 600 mA Gps, POWER GAIN (dB) 22 21 20 19 18 17 16 400 15 50 Figure 6. Pulsed Output Power versus Input Power IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec Duty Cycle = 12% 20 300 mA 150 mA 19 18 17 50 450 mA VDD = 50 Vdc, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 100 Pout, OUTPUT POWER (WATTS) PULSED 35 V VDD = 30 V 100 40 V 45 V 50 V 400 Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 400 Pout, OUTPUT POWER (WATTS) PULSED TC = --30_C 25_C 85_C Gps, POWER GAIN (dB) 300 22 TC = --30_C 20 25_C 85_C 18 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 100 Pout, OUTPUT POWER (WATTS) PULSED 55_C ηD 34 Gps 24 25_C 55_C --30_C 85_C 70 58 200 46 100 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 0 0 1 2 3 4 5 6 Pin, INPUT POWER (WATTS) PULSED 16 50 22 400 Figure 9. Pulsed Output Power versus Input Power 19 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 10 9 1200 IRL ηD Gps Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 63 ηD, DRAIN EFFICIENCY (%) 62 61 60 59 0 --5 --10 --15 VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.) Pulse Width = 300 μsec, Duty Cycle = 12% 1225 1250 1275 1300 1325 1350 1375 --20 --25 1400 f, FREQUENCY (MHz) Figure 11. Broadband Performance @ Pout = 330 Watts Peak 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 330 W Peak, Pulse Width = 300 μsec, Duty Cycle = 12%, and ηD = 60.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature MRF6V14300HR3 MRF6V14300HSR3 6 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%) Zo = 10 Ω f = 1400 MHz Zload f = 1400 MHz f = 1200 MHz Zsource f = 1200 MHz VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak f MHz 1200 1300 1400 Zsource Ω 2.70 -- j4.10 4.93 -- j2.66 7.01 -- j2.87 Zload Ω 2.97 -- j2.66 2.85 -- j2.40 3.17 -- j1.78 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS B G 1 2X Q bbb M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF 3 (FLANGE) B 2 K D bbb M TA M B M M (INSULATOR) R M (LID) bbb N H (LID) M TA B M ccc aaa M TA TA M B B M S M (INSULATOR) M ccc C TA M B M M M F E A (FLANGE) A T SEATING PLANE CASE 465-06 ISSUE G NI-780 MRF6V14300HR3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) B 1 4X Z (LID) (FLANGE) B 2 2X K D bbb M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF TA M B M N (LID) ccc M H 3 M TA M B R M (LID) ccc aaa M TA TA M B B M (INSULATOR) S M (INSULATOR) M bbb C M TA B M M M F T SEATING PLANE E A (FLANGE) A CASE 465A-06 ISSUE H NI-780S MRF6V14300HSR3 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6V14300HR3 MRF6V14300HSR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Sept. 2008 Oct. 2008 • Initial Release of Data Sheet • Added footnote to describe the formula used to calculate values for Min and Typ Drain Efficiency in the Functional Test table, p. 2 • Updated Fig. 4, Safe Operating Area, to show additional curves for 270 W and 300 W output power, p. 5 • Added Fig. 12, MTTF versus Junction Temperature, p. 6 2 3 Nov. 2008 Apr. 2010 • Changed “multiply by” symbol to “divide by” symbol in the Functional Test Drain Efficiency formula footnote, p. 2 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Reporting of pulsed thermal data now shown using the ZθJC symbol, p. 1 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 9 Description MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MRF6V14300HR3 MRF6V14300HSR3 1Rev. 3, 4/2010 0 Document Number: MRF6V14300H RF Device Data Freescale Semiconductor