MRF6V14300HSR5

Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 3, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6V14300HR3 MRF6V14300HSR3 RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.5% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power 1400 MHz, 330 W, 50 V PULSED LATERAL N--CHANNEL RF POWER MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465--06, STYLE 1 NI--780 MRF6V14300HR3 CASE 465A--06, STYLE 1 NI--780S MRF6V14300HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +100 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit ZθJC 0.13 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6V14300HR3 MRF6V14300HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 10 μAdc 100 — — Vdc Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Gate Threshold Voltage (VDS = 10 Vdc, ID = 662 μAdc) VGS(th) 0.9 1.6 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.4 3 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.63 Adc) VDS(on) — 0.26 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.6 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 350 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 330 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle Power Gain Gps 16.5 18 19.5 dB Drain Efficiency ηD 59(2) 60.5(2) — % Input Return Loss IRL — --12 --9 dB Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.), f1 = 1200 MHz, f2 = 1300 MHz and f3 = 1400 MHz, Pulsed, 300 μsec Pulse Width, 12% Duty Cycle, tr = 50 ns Relative Insertion Phase |∆Φ| — 10 — ° Gain Flatness GF — 0.5 — dB Pulse Amplitude Droop Drp — 0.3 — dB Harmonic 2nd and 3rd H2 & H3 — --20 — dBc — --65 — dBc Spurious Response Load Mismatch Stability (VSWR = 3:1 at all Phase Angles) VSWR--S All Spurs Below --60 dBc Load Mismatch Tolerance (VSWR = 5:1 at all Phase Angles) VSWR--T No Degradation in Output Power 1. Part internally matched both on input and output. 2. Drain efficiency is calculated by: η = 100 × P out where: Ipeak = (IAVG -- IDQ) / Duty Cycle (%) + IDQ. D V DD × I peak MRF6V14300HR3 MRF6V14300HSR3 2 RF Device Data Freescale Semiconductor C3 VBIAS R1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C6 C7 Z23 C8 Z22 Z13 Z1 + C4 + C9 RF INPUT C5 VSUPPLY + Z9 Z10 Z11 C1 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 RF OUTPUT C2 Z12 DUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 0.205″ x 0.080″ Microstrip 0.721″ x 0.022″ Microstrip 0.080″ x 0.104″ Microstrip 0.128″ x 0.022″ Microstrip 0.062″ x 0.134″ Microstrip 0.440″ x 0.022″ Microstrip 0.262″ x 0.496″ Microstrip 0.030″ x 0.138″ Microstrip 0.256″ x 0.028″ Microstrip 0.058″ x 0.254″ Microstrip 0.344″ x 0.087″ Microstrip 0.110″ x 0.087″ Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 0.110″ x 0.866″ Microstrip 0.630″ x 0.866″ Microstrip 0.307″ x 0.470″ Microstrip 0.045″ x 0.221″ Microstrip 0.171″ x 0.136″ Microstrip 0.120″ x 0.430″ Microstrip 0.964″ x 0.136″ Microstrip 0.177″ x 0.078″ Microstrip 0.215″ x 0.078″ Microstrip 1.577″ x 0.070″ Microstrip 1.459″ x 0.070″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6V14300HR3(HSR3) Test Circuit Schematic Table 5. MRF6V14300HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 43 pF Chip Capacitor ATC100B430JT500XT ATC C2 18 pF Chip Capacitor ATC100B180JT500XT ATC C3 33 pF Chip Capacitor ATC100B330JT500XT ATC C4 27 pF Chip Capacitor ATC100B270JT500XT ATC C5 2.2 μF, 100 V Chip Capacitor 2225X7R225KT3AB ATC C6 470 μF, 63 V Electrolytic Capacitor EMVY630GTR471MMH0S Multicomp C7 330 pF, 63 V Electrolytic Capacitor EMVY630GTR331MMH0S Multicomp C8 0.1 μF, 35 V Chip Capacitor CDR33BX104AKYS Kemet C9 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 3 C9 C3 C4 C8 C6 C5 R1 C7 C2 CUT OUT AREA C1 MRF6V14300 Rev. 1 Figure 2. MRF6V14300HR3(HSR3) Test Circuit Component Layout MRF6V14300HR3 MRF6V14300HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 160 Coss Ciss 100 MAXIMUM OPERATING Tcase (°C) C, CAPACITANCE (pF) 1000 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 1 140 120 100 Pout = 300 W 80 40 VDD = 50 Vdc, IDQ = 150 mA f = 1200 MHz, Pulse Width = 300 μsec 20 0 0.1 0 10 20 30 40 0 50 6 8 10 12 14 16 DUTY CYCLE (%) Figure 3. Capacitance versus Drain--Source Voltage Figure 4. Safe Operating Area 24 65 22 55 59 58 20 45 ηD 35 18 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 16 50 Pout, OUTPUT POWER (dBm) Gps ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 4 2 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 57 25 100 56 55 400 P1dB = 54.77 dBm (300 W) Actual 51 50 49 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 29 31 33 35 37 Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 6. Pulsed Output Power versus Input Power 22 21 21 Gps, POWER GAIN (dB) IDQ = 600 mA 20 300 mA 150 mA 450 mA 19 18 17 50 100 400 39 IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec Duty Cycle = 12% 20 19 18 17 35 V 16 VDD = 50 Vdc, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 20 18 Ideal P3dB = 55.30 dBm (339 W) 54 53 52 48 47 27 22 Gps, POWER GAIN (dB) Pout = 270 W Pout = 330 W 60 15 50 40 V 45 V 50 V VDD = 30 V 100 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power 400 MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 25_C 55_C 25_C 300 Gps, POWER GAIN (dB) 85_C 200 100 22 20 25_C 85_C 1 2 3 4 5 6 ηD 55_C 34 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 16 50 100 Pin, INPUT POWER (WATTS) PULSED 22 400 Pout, OUTPUT POWER (WATTS) PULSED Figure 9. Pulsed Output Power versus Input Power Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 63 19 18 Gps 62 17 Gps, POWER GAIN (dB) 58 61 16 60 ηD 15 59 14 0 13 --5 IRL --10 12 --15 11 10 9 1200 VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak (39.6 W Avg.) Pulse Width = 300 μsec, Duty Cycle = 12% 1225 1250 1275 1300 1325 1350 1375 --20 --25 1400 ηD, DRAIN EFFICIENCY (%) 0 70 46 18 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz Pulse Width = 300 μsec, Duty Cycle = 12% 0 85_C Gps TC = --30_C --30_C IRL, INPUT RETURN LOSS (dB) Pout, OUTPUT POWER (WATTS) PULSED TC = --30_C ηD, DRAIN EFFICIENCY (%) 24 400 f, FREQUENCY (MHz) Figure 11. Broadband Performance @ Pout = 330 Watts Peak MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 330 W Peak, Pulse Width = 300 μsec, Duty Cycle = 12%, and ηD = 60.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature MRF6V14300HR3 MRF6V14300HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1400 MHz f = 1400 MHz Zload Zsource f = 1200 MHz f = 1200 MHz VDD = 50 Vdc, IDQ = 150 mA, Pout = 330 W Peak f MHz Zsource Ω Zload Ω 1200 2.70 -- j4.10 2.97 -- j2.66 1300 4.93 -- j2.66 2.85 -- j2.40 1400 7.01 -- j2.87 3.17 -- j1.78 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A M B M M R (INSULATOR) bbb N T A M M B M ccc M T A M S (LID) ccc H T A M M B M aaa M T A M (LID) B M (INSULATOR) B M C F E A SEATING PLANE T A CASE 465--06 ISSUE G NI--780 MRF6V14300HR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M M T A M B R M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A--06 ISSUE H NI--780S MRF6V14300HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6V14300HR3 MRF6V14300HSR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2008 • Initial Release of Data Sheet 1 Oct. 2008 • Added footnote to describe the formula used to calculate values for Min and Typ Drain Efficiency in the Functional Test table, p. 2 • Updated Fig. 4, Safe Operating Area, to show additional curves for 270 W and 300 W output power, p. 5 • Added Fig. 12, MTTF versus Junction Temperature, p. 6 2 Nov. 2008 • Changed “multiply by” symbol to “divide by” symbol in the Functional Test Drain Efficiency formula footnote, p. 2 3 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Reporting of pulsed thermal data now shown using the ZθJC symbol, p. 1 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 9 MRF6V14300HR3 MRF6V14300HSR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008, 2010. All rights reserved. MRF6V14300HR3 MRF6V14300HSR3 Document Number: MRF6V14300H Rev. 3, 4/2010 10 RF Device Data Freescale Semiconductor