MRF6V2300N

Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain — 27 dB Drain Efficiency — 68% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW Output Power Features • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 225°C Capable Plastic Package • RoHS Compliant MRF6V2300N MRF6V2300NB PREPRODUCTION 10 - 450 MHz, 300 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2300N CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TJ Value - 0.5, +110 - 6.0, +10 - 65 to +150 225 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature TBD°C, TBD W CW Case Temperature TBD°C, TBD W CW Symbol RθJC Value (3) TBD TBD Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (Calculator available when part is in production.) 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. This document contains information on a preproduction product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6V2300N MRF6V2300NB 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class TBD (Minimum) TBD (Minimum) TBD (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 110 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Drain - Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW (f = 220 MHz) Crss Coss Ciss — — — 2.44 120 282 — — — pF pF pF VGS(th) VDS(on) — — 2.4 0.3 — — Vdc Vdc IDSS IDSS BVDSS IGSS — — 110 — — — — — 10 10 — 10 μAdc μAdc Vdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW Gps ηD IRL P1dB — — — — 27 68 - 17 330 — — — — dB % dB W ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2300N MRF6V2300NB 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 27.5 27 Gps, POWER GAIN (dB) 26.5 26 25.5 25 24.5 24 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW ηD VDD = 50 Vdc IDQ = 900 mA f = 220 MHz Gps 80 70 ηD, DRAIN EFFICIENCY (%) 27 Gps, POWER GAIN (dB) 900 mA 810 mA 26 720 mA 60 50 40 30 20 10 28 IDQ = 990 mA 1090 mA 25 VDD = 50 Vdc f = 220 MHz 24 23 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW Figure 1. Power Gain and Drain Efficiency versus CW Output Power Figure 2. Power Gain versus Output Power −20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −25 −30 −35 IM3 −U −40 −45 −50 0 50 100 150 200 Pout, OUTPUT POWER (WATTS) PEP IM3 −L VDD = 50 Vdc, IDQ = 900 mA f1 = 220 MHz, f2 = 220.1 MHz Two −Tone Measurements 60 85_C Pout, OUTPUT POWER (dBm) 55 25_C 50 45 VDD = 50 Vdc IDQ = 900 mA f = 220 MHz 15 20 25 30 35 −30_C 40 35 10 Pin, INPUT POWER (dBm) Figure 3. Third Order Intermodulation Distortion versus Output Power Figure 4. Output Power versus Input Power over Temperature MRF6V2300N MRF6V2300NB RF Device Data Freescale Semiconductor 3 PACKAGE DIMENSIONS B E1 E3 2X A GATE LEAD DRAIN LEAD D1 4X D e b1 aaa M C A 4X D2 c1 H DATUM PLANE ZONE J 2X 2X E F A1 A2 E2 E5 E4 2X A NOTE 7 C SEATING PLANE PIN 5 NOTE 8 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 4 D3 3 MRF6V2300N MRF6V2300NB 4 RF Device Data Freescale Semiconductor ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6V2300N STYLE 1: PIN 1. 2. 3. 4. 5. MRF6V2300N MRF6V2300NB RF Device Data Freescale Semiconductor 5 MRF6V2300N MRF6V2300NB 6 RF Device Data Freescale Semiconductor MRF6V2300N MRF6V2300NB RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6V2300N MRF6V2300NB 8Rev. 4, 10/2006 Document Number: Order from RF Marketing RF Device Data Freescale Semiconductor