MRF9030MBR1

Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 RF Power Field Effect Transistors replacement. N suffix added to part number to indicate transition to lead - free terminations. N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. • 200_C Capable Plastic Package • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF9030MR1 MRF9030MBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs ARCHIVE INFORMATION CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF9030MR1 CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC MRF9030MBR1 Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, + 15 139 0.93 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 1.08 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model MRF9030MR1 MRF9030MBR1 Class 1 (Minimum) M2 (Minimum) C7 (Minimum) C6 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF9030MR1 MRF9030MBR1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 5. Electrical Characteristics (Tc = 25°c Unless Otherwise Noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 — — 2.9 3.8 0.23 2.7 4 5 0.4 — Vdc Vdc Vdc S ARCHIVE INFORMATION Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 49 27 1.2 — — — pF pF pF Functional Tests (In Freescale Test Fixture) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps 18 20 — dB η 37 41 — % IMD — - 31 - 28 dBc IRL — - 13 -9 dB Gps — 20 — dB η — 40.5 — % IMD — - 31 — dBc IRL — - 12 — dB MRF9030MR1 MRF9030MBR1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION B1 VGG + C8 C7 L1 L2 B2 VDD + C15 C16 + C17 + C18 RF INPUT C5 Z1 C1 C2 C3 C4 C6 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 DUT Z11 C9 Z12 Z13 Z14 Z15 Z16 Z17 C14 C10 C11 C12 C13 Z18 RF OUTPUT ARCHIVE INFORMATION Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.200″ x 0.270″ Microstrip 0.330″ x 0.270″ Microstrip 0.140″ x 0.270″ x 0.520″, Taper 0.040″ x 0.520″ Microstrip 0.090″ x 0.520″ Microstrip 0.370″ x 0.520″ Microstrip (MRF9030MR1) 0.290″ x 0.520″ Microstrip (MRF9030MBR1) 0.130″ x 0.520″ Microstrip (MRF9030MR1) 0.210″ x 0.520″ Microstrip (MRF9030MBR1) Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board 0.360″ x 0.270″ Microstrip 0.050″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.220″ x 0.060″ Microstrip 0.100″ x 0.060″ Microstrip 0.870″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF - 35- 0300, εr = 3.5 Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values Part B1 B2 C1, C7, C14, C15 C2 C3, C11 C4, C12 C5, C6 C8, C16, C17 C9, C10 C13 C18 L1, L2 WB1, WB2 PCB Description Short Ferrite Bead, Surface Mount Long Ferrite Bead, Surface Mount 47 pF Chip Capacitors 0.6- 4.5 Variable Capacitor, Gigatrim 3.9 pF Chip Capacitors 0.8- 8.0 Variable Capacitors, Gigatrim 6.8 pF Chip Capacitors 10 μF, 35 V Tantulum Chip Capacitors 10 pF Chip Capacitors 1.8 pF Chip Capacitor (MRF9030MR1) 0.6- 4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) 220 μF Electrolytic Chip Capacitor 12.5 nH Coilcraft Inductors 20 mil Brass Shim (0.250 x 0.250) Etched Circuit Board 95F786 95F787 100B470JP 500X 44F3360 100B3R6BP 500X 44F3360 100B7R5JP 500X 93F2975 100B100JP 500X 100B1R8BP 44F3360 14F185 A04T- 5 RF - Design Lab 900 MHz μ250/Viper Rev 02 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC Newark ATC ATC Newark Newark Coilcraft RF - Design Lab DSelectronics MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION C18 C8 VGG B1 B2 C7 C15 C16 C17 VDD C1 L1 C2 C5 CUT OUT AREA C9 WB2 C10 L2 C14 C4 WB1 C3 C6 C11 C12 C13 ARCHIVE INFORMATION Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030MR1) C18 C8 VGG B1 C7 C15 L1 C5 WB1 CUT OUT AREA C3 C4 C6 WB2 C9 C10 L2 B2 VDD C16 C17 C1 C2 C14 C11 C12 C13 MRF9030M Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. 930 - 960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 900 MHz Rev 02 TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) −10 −12 −14 −16 −18 IRL, INPUT RETURN LOSS (dB) 22 21 G ps , POWER GAIN (dB) 20 19 18 17 16 15 14 930 IRL VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two−Tone, 100 kHz Tone Spacing 935 940 945 950 955 IMD Gps η 50 45 40 35 −30 −32 −34 −36 ARCHIVE INFORMATION f, FREQUENCY (MHz) Figure 4. Class AB Broadband Circuit Performance IMD, INTERMODULATION DISTORTION (dBc) 21.5 21 G ps , POWER GAIN (dB) 20.5 300 mA 20 250 mA 19.5 200 mA 19 18.5 0.1 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 100 −15 −20 −25 −30 −35 −40 −45 −50 −55 0.1 250 mA 1 300 mA VDD = 26 Vdc 375 mA f1 = 945 MHz f2 = 945.1 MHz 10 100 IDQ = 200 mA IDQ = 375 mA Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Power Gain versus Output Power Figure 6. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −10 −20 −30 −40 −50 −60 7th Order −70 −80 0.1 5th Order VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 3rd Order 22 20 G ps , POWER GAIN (dB) 18 16 14 12 10 0.1 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz 1 10 Gps 60 50 40 30 20 10 0 100 η, DRAIN EFFICIENCY (%) η 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Power Gain and Efficiency versus Output Power MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION −38 960 20 G ps , POWER GAIN (dB) 18 Gps 40 20 η 16 14 12 10 0.1 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz 0 −20 −40 −60 100 IMD 1 10 Pout, OUTPUT POWER (WATTS) PEP ARCHIVE INFORMATION MRF9030MR1 MRF9030MBR1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Figure 9. Power Gain, Efficiency and IMD versus Output Power η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 22 60 ARCHIVE INFORMATION Zo = 5 Ω Zsource f = 930 MHz f = 960 MHz Zload f = 960 MHz f = 930 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz 930 945 960 Zsource Ω 1.07 + j0.160 1.14 + j0.385 1.17 + j0.170 Zload Ω 3.53 - j0.20 3.41 - j0.24 3.60 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Note: Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance (MRF9030MR1) MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION ARCHIVE INFORMATION Zo = 5 Ω Zsource f = 960 MHz Zload f = 960 MHz f = 930 MHz f = 930 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz 930 945 960 Zsource Ω 1.0 - j0.18 1.0 - j0.10 1.0 - j0.03 Zload Ω 3.05 - j0.09 3.00 - j0.07 2.95 - j0.03 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Note: Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance (MRF9030MBR1) MRF9030MR1 MRF9030MBR1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION NOTES MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 9 NOTES MRF9030MR1 MRF9030MBR1 10 RF Device Data Freescale Semiconductor NOTES MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MRF9030MR1 MRF9030MBR1 12 RF Device Data Freescale Semiconductor MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 13 MRF9030MR1 MRF9030MBR1 14 RF Device Data Freescale Semiconductor 2X aaa M r1 CAB DRAIN ID B E1 A GATE LEAD DRAIN LEAD D1 2X b1 aaa M CA D 2 E c1 H DATUM PLANE F ZONE "J" A A1 A2 7 Y E2 Y C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 5.05 4.90 .28 .18 1.73 1.60 .10 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 1337 - 03 ISSUE C TO - 272 - 2 PLASTIC MRF9030MBR1 RF Device Data Freescale Semiconductor ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ E2 VIEW Y - Y PIN 3 1 NOTE 8 MRF9030MR1 MRF9030MBR1 15 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF9030MR1 MRF9030MBR1 1Rev. 9, 5/2006 6 MRF9030M RF Device Data Freescale Semiconductor