MRFG35002N6T1

Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Document Number: MRFG35002N6 Rev. 2, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Drain Efficiency — 27% ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • 1.5 Watts P1dB @ 3550 MHz, CW • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant. • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6T1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch TC Value 8 -5 22 - 65 to +150 175 - 20 to +85 Unit Vdc Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (2) 15.2 Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf . Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. MRFG35002N6T1 1 RF Device Data Freescale Semiconductor LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 LIFETIME BUY Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 6 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) Quiescent Gate Voltage (VDS = 6 Vdc, ID = 65 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min — — — — - 1.2 - 1.1 Typ 1.7 < 1.0 — < 1.0 - 0.9 - 0.8 Max — 100 600 9 - 0.7 - 0.6 Unit Adc μAdc μAdc mAdc Vdc Vdc LIFETIME BUY Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158.5 mW Avg., f = 3550 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 8.5 23 — 10 27 - 41 — — - 38 dB % dBc Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB — 1.5 — W MRFG35002N6T1 2 RF Device Data Freescale Semiconductor LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 VBIAS C8 C13 C12 C11 C10 C9 C7 R1 C19 C20 C6 RF INPUT Z1 C1 C3 C4 C23 Z2 Z3 Z4 Z5 C5 C22 Z6 Z7 Z8 Z9 Z10 C21 Z11 Z12 Z13 C24 Z14 C18 C17 C16 C15 C14 VSUPPLY RF OUTPUT Z1, Z14 Z2 Z3 Z4 Z5 Z6, Z11 Z7 0.044″ 0.044″ 0.044″ 0.468″ 0.468″ 0.015″ 0.031″ x 0.125″ Microstrip x 0.500″ Microstrip x 0.052″ Microstrip x 0.010″ Microstrip x 0.356″ Microstrip x 0.549″ Microstrip x 0.259″ Microstrip Z8 Z9 Z10 Z12 Z13 PCB 0.420″ x 0.150″ Microstrip 0.150″ x 0.068″ Microstrip 0.290″ x 0.183″ Microstrip 0.044″ x 0.115″ Microstrip 0.044″ x 0.894″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 1. MRFG35002N6 Test Circuit Schematic Table 5. MRFG35002N6 Test Circuit Component Designations and Values Part C1, C24 C2 C3 C4 C5, C6, C21, C22 C7, C20 C8, C19 C9, C18 C10, C17 C11, C16 C12, C15 C13, C14 C23 R1 Not Used 1.2 pF Chip Capacitor 0.7 pF Chip Capacitor 5.6 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K pF Chip Capacitors 10 μF Chip Capacitors 0.2 pF Chip Capacitor 100 Ω, 1/4 W Chip Resistor 08051J1R2BBT 08051J0R7BBT 08051J6R8BBT 100A100JP150X 100A101JP150X 100B101JP500X 100B102JP50X CDR33BX104AKWS 200B393KP50X GRM55DR61H106KA88B 08051J0R2BBT AVX AVX AVX ATC ATC ATC ATC Kemet ATC Kemet AVX Description 13 pF Chip Capacitors Part Number 100A130JP150X Manufacturer ATC MRFG35002N6T1 RF Device Data Freescale Semiconductor 3 LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 LIFETIME BUY C13 C12 C11 C10 C9 C8 C7 C18 C17 C16 C15 C14 R1 C5 C6 C19 C20 C22 C21 LIFETIME BUY C2 C1 C3 C4 C23 C24 MRFG35002M6, Rev. 2 3.5 GHz - 3.6 GHz Figure 2. MRFG35002N6 Test Circuit Component Layout MRFG35002N6T1 4 RF Device Data Freescale Semiconductor LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 TYPICAL CHARACTERISTICS 14 GT, TRANSDUCER GAIN (dB) 12 VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_ GT 50 10 30 8 20 6 ηD 4 0 5 10 15 20 25 Pout, OUTPUT POWER (dBm) 10 0 30 LIFETIME BUY Figure 3. Transducer Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −20 VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_ 0 IRL, INPUT RETURN LOSS (dB) −30 −5 −40 IRL −10 −50 ACPR −60 0 6 12 18 24 Pout, OUTPUT POWER (dBm) −15 −20 30 Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. ηD, DRAIN EFFICIENCY (%) 40 MRFG35002N6T1 RF Device Data Freescale Semiconductor 5 LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 TYPICAL CHARACTERISTICS 14 VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 50 10 Gps 30 8 20 6 ηD 4 0 6 12 18 24 Pout, OUTPUT POWER (dBm) 10 0 30 LIFETIME BUY Figure 5. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −20 VDS = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 IRL −40 −15 −10 −5 IRL, INPUT RETURN LOSS (dB) −50 ACPR −60 0 6 12 18 24 Pout, OUTPUT POWER (dBm) −20 −25 30 Figure 6. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: Data is generated from the test circuit shown. MRFG35002N6T1 6 RF Device Data Freescale Semiconductor ηD, DRAIN EFFICIENCY (%) 12 Gps, POWER GAIN (dB) 40 LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA f GHz 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 S11 |S11| 0.906 0.906 0.906 0.906 0.908 0.907 0.907 0.907 0.908 0.908 0.907 0.908 0.909 0.909 0.907 0.907 0.907 0.911 0.904 0.906 0.905 0.907 0.908 0.908 0.908 0.907 0.907 0.907 0.907 0.907 0.906 0.905 0.904 0.905 0.903 0.902 0.901 0.901 0.900 0.899 0.899 0.897 0.896 0.895 0.894 0.893 ∠φ - 173.61 - 175.37 - 176.93 - 178.40 - 179.79 179.01 177.87 176.78 175.82 174.92 174.04 173.19 172.44 171.49 170.67 169.76 168.81 167.94 167.04 165.86 164.68 162.72 161.85 160.93 160.05 159.11 158.22 157.41 156.52 155.57 154.82 153.97 153.06 152.15 151.26 150.30 149.48 148.64 147.66 146.68 145.77 144.90 143.88 143.15 142.07 141.15 |S21| 6.43 5.86 5.38 4.98 4.65 4.34 4.08 3.85 3.65 3.46 3.30 3.15 3.02 2.90 2.79 2.68 2.59 2.50 2.43 2.36 2.30 2.18 2.11 2.06 2.00 1.95 1.90 1.86 1.82 1.78 1.74 1.71 1.67 1.65 1.62 1.59 1.57 1.55 1.53 1.52 1.50 1.49 1.47 1.46 1.45 1.43 S21 ∠φ 84.54 82.68 80.94 79.21 77.51 75.94 74.33 72.72 71.14 69.56 68.00 66.45 64.84 63.23 61.71 60.14 58.62 57.03 55.47 53.91 52.30 51.28 49.87 48.41 46.98 45.59 44.16 42.77 41.41 39.95 38.64 37.30 35.97 34.63 33.28 31.95 30.67 29.34 28.02 26.72 25.40 24.06 22.69 21.34 19.94 18.49 |S12| 0.0316 0.0319 0.0320 0.0317 0.0320 0.0320 0.0321 0.0323 0.0324 0.0322 0.0322 0.0324 0.0325 0.0327 0.0327 0.0328 0.0328 0.0330 0.0334 0.0334 0.0333 0.0325 0.0327 0.0328 0.0328 0.0330 0.0330 0.0330 0.0332 0.0332 0.0335 0.0336 0.0339 0.0339 0.0340 0.0341 0.0344 0.0345 0.0348 0.0351 0.0353 0.0356 0.0361 0.0365 0.0370 0.0375 S12 ∠φ 1.5 0.8 - 0.6 - 1.7 - 2.8 - 3.3 - 4.3 - 5.5 - 6.3 - 6.7 - 7.7 - 8.9 - 9.2 - 10.6 - 11.6 - 12.0 - 13.3 - 14.1 - 14.8 - 16.2 - 16.9 - 17.3 - 17.9 - 18.7 - 19.8 - 20.1 - 20.6 - 21.2 - 22.4 - 22.9 - 23.8 - 24.5 - 25.1 - 26.0 - 26.8 - 27.4 - 28.0 - 28.5 - 29.1 - 29.6 - 30.6 - 31.2 - 31.7 - 32.5 - 33.3 - 34.0 |S22| 0.713 0.714 0.714 0.713 0.713 0.712 0.713 0.713 0.713 0.712 0.711 0.712 0.711 0.711 0.711 0.709 0.709 0.713 0.706 0.707 0.707 0.712 0.712 0.713 0.713 0.712 0.713 0.714 0.713 0.713 0.713 0.712 0.712 0.712 0.711 0.709 0.709 0.707 0.705 0.703 0.703 0.699 0.697 0.695 0.692 0.689 S22 ∠φ - 175.9 - 177.3 - 178.6 - 179.9 178.9 177.6 176.4 175.1 173.7 172.4 171.1 169.7 168.2 167.0 165.7 164.5 163.5 162.3 161.1 160.1 161.0 160.0 159.1 158.1 157.3 156.4 155.6 154.8 154.0 153.4 152.7 152.1 151.5 150.9 150.3 149.7 149.2 148.6 148.0 147.3 146.8 146.2 145.6 144.9 144.2 - 174.6 MRFG35002N6T1 RF Device Data Freescale Semiconductor 7 LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 LIFETIME BUY Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued) f GHz 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.852 0.850 0.851 0.848 0.847 0.846 0.845 0.843 0.840 0.839 0.837 0.835 0.834 0.832 0.831 0.831 0.829 0.826 ∠φ 140.26 139.29 138.19 137.20 136.18 135.00 133.98 132.89 131.67 130.56 129.47 128.25 127.01 125.80 124.44 123.10 121.58 120.32 118.80 117.37 115.86 114.26 112.73 111.11 109.30 107.69 106.01 104.09 102.36 100.53 98.59 96.65 94.71 92.56 90.47 88.43 86.15 83.96 81.79 79.39 77.08 74.81 72.32 69.82 67.43 64.82 |S21| 1.42 1.42 1.41 1.40 1.40 1.39 1.38 1.38 1.37 1.37 1.36 1.36 1.35 1.35 1.35 1.34 1.34 1.33 1.33 1.33 1.32 1.32 1.31 1.31 1.31 1.30 1.30 1.30 1.30 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.29 1.30 1.30 1.30 1.30 1.31 1.31 1.31 S21 ∠φ 17.14 15.69 14.28 12.80 11.33 9.81 8.29 6.77 5.14 3.56 1.92 0.22 - 1.44 - 3.12 - 4.89 - 6.62 - 8.32 - 10.12 - 11.94 - 13.68 - 15.54 - 17.42 - 19.27 - 21.16 - 23.12 - 25.03 - 26.95 - 28.98 - 30.89 - 32.85 - 34.85 - 36.86 - 38.87 - 40.97 - 43.11 - 45.16 - 47.39 - 49.59 - 51.81 - 54.06 - 56.36 - 58.58 - 60.91 - 63.36 - 65.78 - 68.28 |S12| 0.0381 0.0385 0.0386 0.0388 0.0392 0.0394 0.0398 0.0402 0.0407 0.0412 0.0415 0.0419 0.0422 0.0428 0.0431 0.0438 0.0442 0.0449 0.0455 0.0458 0.0458 0.0460 0.0464 0.0469 0.0472 0.0476 0.0482 0.0488 0.0491 0.0498 0.0500 0.0504 0.0509 0.0515 0.0519 0.0526 0.0531 0.0537 0.0541 0.0546 0.0550 0.0554 0.0560 0.0565 0.0571 0.0578 S12 ∠φ - 35.1 - 36.3 - 37.0 - 38.3 - 38.9 - 39.6 - 40.5 - 41.3 - 42.2 - 42.9 - 44.0 - 45.1 - 46.2 - 47.2 - 48.0 - 49.1 - 50.2 - 51.3 - 53.0 - 54.1 - 55.7 - 56.6 - 58.1 - 59.2 - 60.4 - 61.5 - 62.6 - 64.0 - 65.7 - 67.1 - 68.5 - 70.2 - 71.6 - 73.3 - 74.6 - 76.2 - 77.8 - 79.6 - 81.3 - 83.0 - 85.0 - 86.6 - 88.1 - 90.0 - 91.8 - 93.5 |S22| 0.687 0.684 0.682 0.678 0.676 0.671 0.668 0.665 0.662 0.658 0.656 0.651 0.648 0.646 0.642 0.638 0.637 0.633 0.629 0.626 0.624 0.620 0.617 0.615 0.611 0.608 0.605 0.602 0.599 0.596 0.593 0.589 0.586 0.583 0.580 0.576 0.572 0.568 0.564 0.559 0.556 0.550 0.546 0.542 0.537 0.532 S22 ∠φ 142.8 142.0 141.2 140.3 139.4 138.4 137.3 136.2 135.1 133.9 132.8 131.5 130.2 129.0 127.5 126.0 124.9 123.5 122.0 120.5 119.1 117.6 116.1 114.7 113.2 111.8 110.3 108.8 107.4 106.0 104.4 102.9 101.4 99.8 98.2 96.5 94.8 93.0 91.2 89.4 87.6 85.5 83.6 81.5 79.2 143.5 MRFG35002N6T1 8 RF Device Data Freescale Semiconductor LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 LIFETIME BUY Table 6. Class AB Common Source S - Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued) f GHz 5.10 5.15 5.20 5.25 5.30 5.35 5.40 5.45 S11 |S11| 0.826 0.824 0.821 0.819 0.818 0.815 0.814 0.812 ∠φ 62.21 59.75 57.08 54.50 51.91 49.24 46.40 43.69 |S21| 1.31 1.31 1.31 1.31 1.32 1.32 1.32 1.32 S21 ∠φ - 70.79 - 73.33 - 75.85 - 78.30 - 80.93 - 83.65 - 86.36 - 89.16 |S12| 0.0583 0.0592 0.0596 0.0605 0.0610 0.0617 0.0626 0.0629 S12 ∠φ - 95.6 - 97.5 - 99.5 - 101.5 - 103.7 - 105.8 - 108.2 - 110.5 |S22| 0.528 0.524 0.519 0.516 0.512 0.510 0.506 0.501 S22 ∠φ 74.7 72.3 70.0 67.4 64.6 61.9 59.0 77.0 MRFG35002N6T1 RF Device Data Freescale Semiconductor 9 LAST ORDER 8 DEC 07 LAST SHIP 8 JUN 08 LIFETIME BUY PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W 1 G MRFG35002N6T1 10 RF Device Data Freescale Semiconductor ÉÉÉÉÉÉ ÉÉ ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉ ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉ 2 3 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE S ZONE X VIEW Y - Y CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers REVISION HISTORY The following table summarizes revisions to this document. Revision 2 Date Jan. 2008 • Listed replacement part, p. 1 • Added Product Documentation and Revision History, p. 11 Description MRFG35002N6T1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRFG35002N6T1 1Rev. 2, 1/2008 2 Document Number: MRFG35002N6 RF Device Data Freescale Semiconductor