MRFG35030R5

Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications. • Typical Single−Carrier W−CDMA Performance: VDD = 12 Volts, IDQ = 650 mA, Pout = 3 Watts Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain —12 dB Drain Efficiency — 21% ACPR @ 5 MHz Offset — −41 dBc @ 3.84 MHz Channel Bandwidth • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Excellent Thermal Stability • In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFG35030R5 3550 MHz, 30 W, 12 V SINGLE W−CDMA POWER FET GaAs PHEMT CASE 1490−02, STYLE 1 Table 1. Maximum Ratings Rating Drain−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate−Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS PD VGS Pin Tstg Tch TC Symbol RθJC Value 15 79 0.53 −5 37 − 40 to +175 175 − 20 to +90 Unit Vdc W W/°C Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 1. For reliable operation, the operating channel temperature should not exceed 150°C. Value 1.9 Unit °C/W © Freescale Semiconductor, Inc., 2005. All rights reserved. MRFG35030R5 1 RF Device Data Freescale Semiconductor Table 3. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic DC Characteristics Off State Drain Current (VDS = 3.5 Vdc, VGS = −2 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = −2.5 Vdc) Gate−Source Cut−off Voltage (VDS = 3.5 Vdc, IDS = 1 mA/mm) IDSO IDSX VGS(th) — — −0.7 15 5 −0.85 425 42.5 −1.1 µAdc mAdc Vdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg., f = 3550 MHz, Single−carrier W−CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Output Power, 1 dB Compression Point, CW 1. Measurements made with device in test fixture. Gps ηD ACPR P1dB 10 17 — — 12 21 −41 30 — — −36 — dB % dBc W Typical RF Performance (In Freescale Test Fixture, 50 οhm system) VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz MRFG35030R5 2 RF Device Data Freescale Semiconductor VBIAS VSUPPLY + C10 + C9 C8 C7 C6 C5 C4 C3 R1 C16 C15 C14 C13 C12 C11 C2 C17 Z5 RF INPUT Z6 Z1 C1 Z2 Z3 Z4 Z7 C19 Z8 C18 Z9 RF OUTPUT C20 Z1 Z2 Z3 Z4 Z5, Z6 0.065″ x 0.500″ Microstrip 0.065″ x 0.185″ Microstrip 0.115″ x 0.350″ Microstrip 0.065″ x 0.215″ Microstrip 0.020″ x 0.527″ Microstrip Z7 Z8 Z9 PCB 0.085″ x 0.205″ Microstrip 0.065″ x 0.230″ Microstrip 0.065″ x 0.814″ Microstrip Rogers RO4350, 0.030″, εr = 3.5 Figure 1. MRFG35030 Test Circuit Schematic Table 4. MRFG35030 Test Circuit Component Designations and Values Part C1, C2, C17 C3, C16 C4, C15 C5, C14 C6, C13 C7, C12 C8, C11 C9, C10 C18 C19 C20 R1 Description 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K Chip Capacitors 22 µF, 35 V Tantalum Capacitors 1.0 pF Chip Capacitor 0.7 pF Chip Capacitor 0.3 pF Chip Capacitor 10 W, 1/4 W, 1% Resistor Part Number 100A6R8CP500X 100A100JP500X 100A101JP500X 100B101JP500X 100B102JP500X CDR33BX104AKWS 200B393KP50X T491X226K035AS 08051J1R0BBT 08051J0R7BBT 08051J0R3BBT D55342M07B10J0R Manufacturer ATC ATC ATC ATC ATC Newark ATC ATC AVX AVX AVX Dale MRFG35030R5 RF Device Data Freescale Semiconductor 3 VGG VDD C8 C9 C7 C6 C5 C4 C3 C11 C12 C13 C14 C15 C16 C10 R1 C2 C17 C19 C1 CUT OUT AREA C18 C20 MRFG35030 Rev 01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRFG35030 Test Circuit Component Layout MRFG35030R5 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 14 G ps , POWER GAIN (dB) 12 Gps 10 8 6 ηD 20 25 30 35 40 45 Pout, OUTPUT POWER (dBm) 20 10 0 VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 50 40 30 Figure 3. Single−Carrier W−CDMA Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -10 -20 -30 -40 -50 -60 -5 -10 -15 IRL ACPR -20 -25 20 25 30 35 40 45 Pout, OUTPUT POWER (dBm) Figure 4. Single−Carrier W−CDMA Adjacent Channel Power Ratio and Input Return Loss versus Output Power 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) (dB) 3.6 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -96.4 IRL, INPUT RETURN LOSS (dB) 3.84 MHz Channel BW VDD = 12 Vdc, IDQ = 650 mA, f = 3550 MHz Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 0 -ACPR @ 3.84 MHz BW ηD , DRAIN EFFICIENCY (%) +ACPR @ 3.84 MHz BW Center 3.55 GHz 2 MHz f, FREQUENCY (MHz) Span 20 MHz Figure 5. CCDF W−CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single−Carrier Test Signal Figure 6. Single-Carrier W-CDMA Spectrum MRFG35030R5 RF Device Data Freescale Semiconductor 5 Zo = 50 Ω Zsource f = 3600 MHz Zload f = 3500 MHz f = 3500 MHz f = 3600 MHz VDD = 12 Vdc, IDQ = 650 mA, Pout = 3 W Avg. f MHz 3500 3550 3600 Zsource Ω 34.459 + j13.83 35.460 + j14.19 36.000 + j14.12 Zload Ω 10.322 + j5.42 10.400 + j5.44 10.100 + j5.72 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 7. Series Equivalent Source and Load Impedance MRFG35030R5 6 RF Device Data Freescale Semiconductor Table 5. Class AB Common Source S−Parameters at VDD = 12 Vdc, IDQ = 650 mA f GHz 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 S11 |S11| 0.96 0.96 0.96 0.96 0.96 0.96 0.95 0.95 0.95 0.95 0.95 0.94 0.94 0.94 0.93 0.93 0.93 0.92 0.92 0.91 0.91 0.90 0.90 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.86 0.85 0.83 0.81 0.79 0.76 0.72 0.69 0.64 0.59 0.53 ∠φ 146.14 143.94 141.83 139.54 137.28 134.74 132.06 129.35 126.57 123.71 120.59 117.35 113.90 110.38 106.54 102.65 98.32 93.83 89.08 84.07 78.68 73.15 67.33 61.07 54.56 47.64 40.29 32.60 24.42 16.02 7.28 −1.82 −10.92 −20.24 −29.71 −39.08 −48.39 −57.62 −66.46 −75.13 −83.52 −91.51 −99.34 −106.90 −114.08 −120.87 −127.33 |S21| 0.80 0.80 0.80 0.80 0.80 0.80 0.81 0.82 0.84 0.86 0.89 0.92 0.95 0.99 1.03 1.08 1.14 1.19 1.26 1.32 1.39 1.46 1.54 1.62 1.71 1.80 1.89 1.99 2.09 2.20 2.30 2.40 2.49 2.58 2.66 2.73 2.79 2.84 2.89 2.93 2.98 3.02 3.06 3.11 3.17 3.24 3.31 S21 ∠φ 26.33 22.43 18.46 14.44 10.43 6.28 2.08 −2.17 −6.49 −10.87 −15.96 −20.65 −25.47 −30.41 −35.59 −41.07 −46.87 −53.00 −59.40 −66.00 −72.86 −79.86 −87.14 −94.66 −102.36 −110.40 −118.62 −127.18 −135.99 −145.15 −154.53 −164.19 −174.07 175.96 165.78 155.55 145.30 135.00 124.74 114.46 104.21 93.91 83.64 73.20 62.60 51.75 40.49 |S12| 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.05 0.05 0.06 0.06 S12 ∠φ −26.74 −28.86 −31.83 −34.90 −37.88 −40.90 −44.27 −47.36 −51.09 −55.57 −59.77 −64.36 −68.43 −72.98 −78.34 −83.48 −88.75 −94.75 −100.91 −106.97 −113.46 −120.27 −127.45 −135.04 −142.85 −150.91 −159.34 −168.04 −177.20 173.58 163.81 153.87 143.74 133.49 122.87 112.29 101.82 91.15 80.47 69.79 59.07 48.50 37.72 26.81 15.81 4.40 −7.27 |S22| 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.86 0.85 0.84 0.83 0.82 0.80 0.79 0.78 0.77 0.76 0.75 0.73 0.72 0.70 0.68 0.65 0.63 0.60 0.56 0.53 0.49 0.44 0.40 0.35 0.30 0.25 0.21 0.16 0.14 0.13 0.16 0.20 0.24 0.29 0.35 0.40 0.45 0.50 0.55 S22 ∠φ 164.54 162.97 161.29 159.77 158.47 157.36 156.46 155.56 154.65 153.72 151.32 150.22 149.03 147.80 146.32 144.63 142.65 140.48 138.36 136.24 134.10 132.02 130.09 127.98 125.90 123.85 121.74 119.56 117.39 115.36 113.49 111.97 111.53 112.88 117.12 126.44 143.32 165.50 −175.99 −164.66 −158.95 −156.30 −155.52 −156.12 −157.58 −160.01 −163.32 MRFG35030R5 RF Device Data Freescale Semiconductor 7 Table 5. Class AB Common Source S−Parameters at VDD = 12 Vdc, IDQ = 650 mA (continued) f GHz 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.46 0.38 0.29 0.22 0.18 0.22 0.32 0.43 0.54 0.64 0.73 0.80 0.85 0.90 0.93 0.95 0.96 0.97 0.98 0.98 0.98 0.99 0.99 0.99 0.99 0.99 0.99 0.99 1.00 1.00 1.00 1.00 0.99 1.00 ∠φ −132.64 −136.44 −136.21 −127.35 −102.40 −76.34 −66.79 −66.93 −71.16 −77.27 −84.04 −90.75 −97.18 −103.05 −108.56 −113.68 −118.39 −122.39 −126.23 −129.72 −132.86 −135.98 −138.73 −141.42 −144.00 −146.52 −148.89 −151.15 −153.53 −155.94 −158.19 −160.43 −162.40 −164.61 |S21| 3.37 3.44 3.48 3.51 3.50 3.45 3.36 3.22 3.03 2.80 2.55 2.29 2.03 1.79 1.56 1.35 1.17 1.01 0.87 0.75 0.65 0.57 0.49 0.43 0.37 0.33 0.29 0.26 0.24 0.21 0.19 0.18 0.16 0.15 S21 ∠φ 28.77 16.54 3.73 −9.59 −23.47 −37.84 −52.56 −67.50 −82.42 −97.34 −111.69 −125.67 −138.92 −151.47 −163.31 −174.50 175.04 165.37 156.24 147.79 139.97 132.62 125.76 119.49 113.69 108.35 103.42 98.73 94.28 89.98 85.78 81.45 78.17 74.76 |S12| 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.06 0.06 0.06 0.05 0.05 0.04 0.04 0.03 0.03 0.03 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 S12 ∠φ −19.38 −32.21 −45.19 −58.78 −73.20 −88.01 −103.17 −118.63 −134.11 −149.56 −164.55 −179.15 166.69 153.98 141.83 130.44 119.35 108.97 99.25 90.59 83.55 76.85 69.46 62.85 56.84 51.52 46.39 42.21 37.59 34.26 30.24 27.16 25.24 22.43 |S22| 0.59 0.64 0.68 0.71 0.73 0.73 0.71 0.66 0.59 0.50 0.40 0.29 0.20 0.17 0.22 0.29 0.38 0.45 0.52 0.58 0.63 0.68 0.72 0.76 0.79 0.82 0.85 0.87 0.89 0.90 0.91 0.92 0.92 0.93 S22 ∠φ −167.40 −172.25 −177.89 175.79 168.90 161.51 153.97 146.50 139.64 133.98 130.85 133.09 146.65 177.35 −158.21 −149.29 −147.85 −149.63 −152.98 −157.04 −161.14 −165.09 −168.90 −172.28 −175.36 −178.09 179.48 177.24 175.01 172.99 170.86 168.57 165.89 163.33 MRFG35030R5 8 RF Device Data Freescale Semiconductor NOTES MRFG35030R5 RF Device Data Freescale Semiconductor 9 NOTES MRFG35030R5 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G B 1 bbb M T A R (LID) M B M B (FLANGE) S (INSULATOR) J 3 2 K 2X D aaa M T A M (INSULATOR) M 4X Q aaa M aaa M T A TA M M B M BM F B M aaa M T A M B M N (LID) bbb M T A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED .030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H J K M N Q R S aaa bbb INCHES MIN MAX 0.948 0.958 0.680 0.720 0.147 0.182 0.055 0.065 0.035 0.045 0.003 0.006 0.803 BSC 0.057 0.067 0.315 BSC 0.095 0.125 0.595 0.605 0.594 0.606 0.092 0.112 0.678 0.692 0.680 0.690 0.004 0.015 MILLIMETERS MIN MAX 24.08 24.33 17.27 18.29 3.73 4.62 1.40 1.65 0.89 1.14 0.08 0.15 20.40 BSC 1.45 1.70 8.00 2.41 3.18 15.11 15.37 15.09 15.39 2.34 2.84 17.22 17.58 17.27 17.23 0.10 0.38 B M C E H A A (FLANGE) T SEATING PLANE STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE CASE 1490−02 ISSUE A MRFG35030R5 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E−mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005. All rights reserved. MRFG35030R5 12 Document Number: MRFG35030R5 Rev. 2, 3/2005 RF Device Data Freescale Semiconductor