MRFG35010NT1

Freescale Semiconductor Technical Data MRFG35010NT1 replaced by MRFG35010ANT1. Document Number: MRFG35010N Rev. 7, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28% • 9 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35010NT1 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT ARCHIVE INFORMATION CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Symbol RθJC Value 15 22.7(2) 0.15(2) -5 33 - 65 to +150 175 - 20 to +85 Unit Vdc W W/°C Vdc dBm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Value 6.6(2) Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. MRFG35010NT1 1 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 1.9 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min — — — — - 1.2 - 1.2 9.0 — 23 Typ 2.9 < 1.0 0.1 2.0 - 1.0 - 0.95 10 9 28 Max — 100 1.0 15 - 0.7 - 0.7 — — — Unit Adc μAdc mAdc mAdc Vdc Vdc dB W % ARCHIVE INFORMATION Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ACPR — - 43 - 40 dBc MRFG35010NT1 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VBIAS VSUPPLY C11 C10 C9 C8 C7 C6 C5 C4 C19 C18 C17 C16 C15 C14 C13 C12 Z9 R1 Z12 RF INPUT Z1 Z2 Z3 Z4 Z5 C3 Z6 RF OUTPUT Z7 Z8 Z10 Z11 Z13 Z14 Z15 Z16 C20 C22 C21 Z17 ARCHIVE INFORMATION C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z10 Z9 0.045″ 0.045″ 0.020″ 0.045″ 0.045″ 0.045″ 0.300″ 0.146″ 0.025″ x 0.689″ Microstrip x 0.089″ Microstrip x 0.360″ Microstrip x 0.029″ Microstrip x 0.061″ Microstrip x 0.055″ Microstrip x 0.125″ Microstrip x 0.070″ Microstrip x 0.485″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.400″ x 0.215″ Microstrip 0.025″ x 0.497″ Microstrip 0.025″ x 0.271″ Microstrip 0.025″ x 0.363″ Microstrip 0.025″ x 0.041″ Microstrip 0.045″ x 0.050″ Microstrip 0.045″ x 0.467″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values Part C1, C21, C22 C2 C3 C4, C19, C20 C5, C18 C6, C17 C7, C16 C8, C15 C9, C14 C10, C13 C11, C12 R1 Description 0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.5 pF Chip Capacitor 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K pF Chip Capacitors 10 μF Chip Capacitors 47 Ω Chip Resistor Part Number 08051J0R5BBT 06035J0R2BBT 06035J0R5BBT 08051J6R8BBT 100A100JP150X 100A101JP150X 100B101JP500X 100B102JP50X CDR33BX104AKWS 200B393KP50X GRM55DR61H106KA88B D55342M07B47JOR Manufacturer AVX AVX AVX AVX ATC ATC ATC ATC Kemet ATC Kemet Newark MRFG35010NT1 RF Device Data Freescale Semiconductor 3 ARCHIVE INFORMATION C11 C10 C9 C14 C13 C8 C7 C6 C5 C12 C15 C16 C17 C18 C19 ARCHIVE INFORMATION C4 C3 R1 C20 C1 C2 C22 C21 MRFG35010XX, Rev. 5 Figure 2. 3.5 GHz Test Circuit Component Layout MRFG35010NT1 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION TYPICAL CHARACTERISTICS 0 IRL, INPUT RETURN LOSS (dB) −10 −20 −30 −40 −50 −60 ACPR IRL VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA ΓS = 0.898é−134.03 _, ΓL = 0.828é−140.67 _ 0 −10 −20 −30 −40 −50 −60 Pout, OUTPUT POWER (WATTS) ARCHIVE INFORMATION Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 12.5 G T , TRANSDUCER GAIN (dB) 12 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.898é−134.03 _, ΓL = 0.828é−140.67 _ PAE 11 GT 60 50 40 30 20 10 0 10 PAE, POWER ADDED EFFICIENCY (%) 11.5 10.5 10 9.5 0.1 1 Pout, OUTPUT POWER (WATTS) Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35010NT1 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION 0.1 1 10 ACPR (dBc) Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA f GHz 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3 2.35 2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 S11 |S11| 0.946 0.945 0.944 0.945 0.945 0.944 0.945 0.945 0.944 0.945 0.945 0.944 0.944 0.944 0.944 0.943 0.944 0.940 0.946 0.943 0.944 0.943 0.942 0.945 0.946 0.945 0.945 0.947 0.946 0.945 0.948 0.947 0.947 0.948 0.948 0.948 0.949 0.949 0.948 0.948 0.948 0.946 0.946 0.946 0.945 0.943 ∠φ - 177.11 - 178.28 - 179.44 179.50 178.60 177.66 176.74 175.95 175.17 174.36 173.63 172.90 172.09 171.29 170.57 169.71 168.85 168.20 167.07 166.35 163.30 162.54 161.81 161.17 160.55 160.01 159.48 159.00 158.52 158.06 157.71 157.30 156.92 156.58 156.32 156.04 155.73 155.33 154.99 154.57 154.13 153.68 153.15 152.54 151.98 151.22 |S21| 4.710 4.303 3.963 3.674 3.427 3.211 3.023 2.853 2.705 2.570 2.447 2.337 2.234 2.139 2.052 1.971 1.894 1.823 1.754 1.691 1.626 1.573 1.523 1.474 1.429 1.387 1.348 1.310 1.274 1.240 1.209 1.179 1.152 1.127 1.102 1.079 1.058 1.037 1.019 1.002 0.986 0.971 0.957 0.943 0.930 0.918 S21 ∠φ 82.28 80.79 79.23 77.69 76.28 74.83 73.24 71.74 70.36 68.88 67.47 66.06 64.52 63.11 61.73 60.26 58.81 57.49 56.13 54.75 53.36 52.16 50.87 49.56 48.35 47.14 45.88 44.70 43.55 42.30 41.23 40.16 39.09 37.97 36.90 35.82 34.70 33.62 32.54 31.44 30.35 29.28 28.12 26.91 25.73 24.52 |S12| 0.016 0.016 0.016 0.016 0.016 0.016 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.018 0.017 0.017 0.017 0.018 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.021 S12 ∠φ 8.19 7.57 7.60 7.44 7.44 7.21 7.65 7.16 7.34 7.31 7.08 7.29 7.56 7.46 7.43 7.47 7.28 7.56 7.92 7.59 7.06 7.24 7.48 7.46 7.46 7.84 7.89 7.97 7.87 7.89 7.61 7.78 7.65 7.40 7.22 6.98 7.24 7.52 7.60 7.49 7.69 8.05 8.01 8.01 7.82 7.27 |S22| 0.759 0.758 0.758 0.758 0.757 0.757 0.756 0.756 0.756 0.755 0.755 0.756 0.756 0.756 0.757 0.757 0.757 0.755 0.762 0.759 0.762 0.763 0.764 0.765 0.766 0.767 0.767 0.768 0.770 0.769 0.771 0.772 0.773 0.773 0.773 0.775 0.775 0.775 0.776 0.777 0.776 0.777 0.777 0.776 0.777 0.778 S22 ∠φ - 179.39 - 179.99 179.39 178.74 177.98 177.28 176.57 175.75 174.99 174.18 172.51 171.82 171.01 170.22 169.52 168.83 168.39 167.55 167.32 169.20 168.75 168.22 167.71 167.18 166.73 166.15 165.58 165.10 164.54 164.05 163.59 163.12 162.56 162.01 161.53 161.05 160.43 159.99 159.53 158.91 158.40 157.88 157.34 156.80 156.36 173.33 ARCHIVE INFORMATION MRFG35010NT1 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA (continued) f GHz 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 3.2 3.25 3.3 3.35 3.4 3.45 3.5 3.55 3.6 3.65 3.7 3.75 3.8 3.85 3.9 3.95 4 4.05 4.1 4.15 4.2 4.25 4.3 4.35 4.4 4.45 4.5 4.55 4.6 4.65 4.7 4.75 4.8 4.85 4.9 4.95 5 S11 |S11| 0.943 0.943 0.942 0.942 0.943 0.942 0.940 0.940 0.941 0.938 0.939 0.939 0.938 0.938 0.939 0.938 0.938 0.939 0.938 0.937 0.937 0.938 0.938 0.939 0.939 0.939 0.941 0.941 0.940 0.939 0.940 0.940 0.939 0.939 0.939 0.937 0.937 0.937 0.936 0.935 0.935 0.934 0.932 0.931 0.929 ∠φ 150.66 149.88 149.16 148.32 147.41 146.51 145.45 144.41 143.33 142.25 141.15 140.02 138.89 137.88 136.68 135.63 134.63 133.60 132.68 131.84 130.92 130.07 129.29 128.60 127.88 127.23 126.66 126.23 125.73 125.28 124.85 124.45 124.01 123.63 123.27 122.84 122.32 121.88 121.36 120.72 120.04 119.35 118.49 117.69 116.74 |S21| 0.906 0.894 0.883 0.872 0.862 0.853 0.842 0.833 0.823 0.814 0.804 0.795 0.785 0.776 0.767 0.757 0.748 0.739 0.729 0.720 0.711 0.702 0.694 0.686 0.678 0.671 0.664 0.658 0.651 0.645 0.640 0.635 0.630 0.627 0.623 0.620 0.619 0.618 0.617 0.615 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.32 8.97 7.61 6.26 4.96 3.67 2.34 1.04 - 0.25 - 1.47 - 2.69 - 3.89 - 5.07 - 6.23 - 7.34 - 8.46 - 9.57 - 10.65 - 11.72 - 12.82 - 13.86 - 14.92 - 16.00 - 17.01 - 18.03 - 19.03 - 20.17 - 21.26 - 22.45 - 23.68 - 24.90 - 26.12 - 27.41 - 28.72 - 30.05 |S12| 0.021 0.022 0.021 0.021 0.021 0.022 0.022 0.022 0.022 0.022 0.022 0.022 0.022 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.024 0.025 0.025 0.025 0.025 0.026 0.026 0.026 0.027 0.027 0.028 0.028 0.029 0.029 0.030 0.030 0.031 0.031 0.031 0.031 0.032 0.033 S12 ∠φ 6.42 5.21 4.17 4.03 3.53 3.11 2.65 2.43 2.48 2.48 2.08 1.99 2.11 2.05 1.79 1.56 1.02 0.44 - 0.54 - 1.30 - 1.98 - 2.38 - 2.22 - 2.00 - 1.80 - 2.04 - 2.17 - 2.15 - 2.48 - 2.81 - 2.79 - 2.73 - 3.22 - 3.26 - 3.64 - 3.74 - 4.57 - 5.02 - 6.01 - 7.22 - 7.64 - 8.05 - 8.39 - 8.32 - 8.48 |S22| 0.776 0.777 0.778 0.778 0.778 0.780 0.780 0.779 0.782 0.781 0.781 0.782 0.783 0.782 0.783 0.785 0.783 0.783 0.785 0.785 0.785 0.786 0.787 0.787 0.788 0.789 0.789 0.788 0.789 0.789 0.788 0.789 0.789 0.788 0.788 0.789 0.788 0.788 0.788 0.787 0.786 0.786 0.786 0.785 0.786 S22 ∠φ 155.80 155.28 154.81 154.25 153.67 153.18 152.64 152.04 151.43 150.92 149.74 149.19 148.72 147.97 147.40 146.88 146.20 145.61 145.17 144.52 143.87 143.24 142.61 141.94 141.34 140.69 140.01 139.31 138.65 137.91 137.16 136.45 135.67 134.88 134.16 133.36 132.50 131.67 130.83 129.91 129.03 128.20 127.24 126.32 150.33 ARCHIVE INFORMATION MRFG35010NT1 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 ARCHIVE INFORMATION Q ZONE V SOLDER FOOTPRINT DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W 1 2 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE 3 G S ZONE X VIEW Y - Y CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC MRFG35010NT1 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION N K 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm ÉÉÉÉÉÉ ÉÉ ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉ ÉÉÉÉ É ÉÉÉÉÉÉ ÉÉ REVISION HISTORY The following table summarizes revisions to this document. Revision 7 Date Jan. 2008 • Listed replacement part, p. 1 • Added Revision History, p. 9 Description ARCHIVE INFORMATION MRFG35010NT1 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION How to Reach Us: Home Page: www.freescale.com ARCHIVE INFORMATION Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRFG35010NT1 1Rev. 7, 1/2008 0 Document Number: MRFG35010N RF Device Data Freescale Semiconductor ARCHIVE INFORMATION